• 한국전자파학회논문지
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• 제25권6호
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• pp.646-652
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• 2014

본 논문은 GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) die를 이용하여 Ku-대역 전력 증폭기 설계, 제작 그리고 실험 결과에 대해 기술하였다. 저비용으로 Ku-대역 전력 증폭기를 설계하기 위하여 고가의 알루미나 회로 기판 제작 대신 PCB(Printed Circuit Board)를 이용하여 입/출력단 정합 회로를 이용하였다. 측정 결과로는 펄스 모드로 동작시켰을 때 14.8 GHz에서 42.6 dBm의 출력 전력, 37.7 % 드레인 효율 그리고 7.9 dB의 선형 이득을 얻었다. CW(Continuous Wave) 실험 결과로는 39.8 dBm의 출력 전력, 24.1 %의 드레인 효율 그리고 7.2 dB의 선형 이득을 얻을 수 있었다.

• 한국전자파학회논문지
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• 제21권9호
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• pp.987-994
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• 2010

본 논문에서는 간단하면서도 효과적인 능동적인 로드 풀(active load-pull) 방법을 제시하고, 고조파의 임피던스 성분을 제어하는 회로를 사용하여, X-대역 전력 증폭기의 효율을 개선시킬 수 있는 방법에 관하여 연구하였다. 제안된 능동적인 로드 풀 시스템은 크게 방향성 결합기와 위상 변위기, 단락 회로, 그리고 전력 증폭기로 구성되어 있으며, 전통적인 능동적인 로드 풀 방법에 비해 반사 계수가 1인 지점까지 임피던스를 쉽게 가져다 놓을 수 있다. 본 논문에서 사용된 소자는 Mitsubishi사의 GaAs FET인 MGF1801이며, 9 GHz의 동작 주파수에서 class-A일 때, 21.65 dBm의 출력 전력과 24.9 %의 드레인 효율을 얻었고, class-AB일 때, 21.46 dBm의 출력 전력과 53.3%의 드레인 효율을 얻었다. 고조파 제어 회로는 실험에 사용된 초고주파 부품의 주파수 대역폭의 한계로 인해, 2차와 3차 항 성분까지만 고려하여 설계하였으며, class-AB에서, 6.4 %의 효율이 증가된 것을 확인하였다.

• 한국항해항만학회지
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• 제27권1호
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• pp.81-86
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• 2003

본 논문은 초고주파 전력증폭기용 LDMOS(Lateral double-diffused MOS) MRF-21060소자의 게이트 바이어스 전압을 조절하여 온도 변화에 따른 드레인(Drain) 전류의 변화를 억제하기 위한 PNP 트랜지스터를 사용하여 능도 바이어스 회로 구현하였다. MRF-21060을 구동하기 위한 방법으로서는 AH1과 평형증폭기인 A11을 사용하여 구동 증폭단을 설계.제작하였다. 제작된 5W 초고주파 전력증폭기는 0~$60^{\circ}C$까지의 온도변화에 대하여 소모전류 변화량이 수동 바이어스 회로에서 0.5A로 높은 반면, 능동 바이어스 회로에서는 0.1A이하의 우수한 특성을 얻었다. 전력증폭기는 2.11~2.17GHz주파수 대역에서 32dB 이상의 이득과 $\pm$0.09dB이하의 이득 평탄도가 나타났으며, -19dB이하의 입.출력 반사손실을 가진다.

• Design & Manufacturing
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• 제11권2호
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• pp.1-8
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• 2017

In this study, we applied microcellular foaming injection molding process to improve the performance of system air-conditioner drain fan which had been produced by injection molding process and studied the optimization of process conditions through 6-sigma process and response surface method (RSM) to reduce weight and deformation of products. Additive type, melt temperature, mold temperature, and injection screw shape were selected as the factor affecting the weight and deformation of the products by carrying out analysis of trivial many through ANOVA and design of experiment (DOE) method. Among the effect factor, we set the addictive type to Long G/F and screw shape to foaming screw which had the highest level of weight reduction and deformation reduction. The amount of foaming agent gas was set at 60 ml, which was the limit beyond which the weight of product did not decrease any more. For melt temperature and mold temperature, we studied the conditions where both weight and deformation were minimized using the RSM. As a result, we set the melt temperature to $250^{\circ}C$, fixed mold temperature to $20^{\circ}C$, and moving mold temperature to $40^{\circ}C$. The improvement effect was analyzed by appling the selected optimal conditions to the production process using the microcellular foaming injection molding. The results showed that the mean weight of product was measured to be 1,420g which was 19% lower than that measured in the current process. The standard deviations of the weights were found to be similar to those in the current process and it showed a low dispersion. The mean deformation was measured to be 0.9237mm, which represented a 57% reduction compared to the mean deformation in the current process, and the standard deviation decreased from 0.3298mm to 0.1398mm. Moreover, we analyzed the process capability for deformation, and the results showed that the short-term process capability increased from 2.73 to 6.60 which was even higher than targeted level of 6.0.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• 한국전자파학회논문지
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• 제25권8호
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• pp.802-807
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• 2014

본 논문은 전력 증폭기의 출력 전력 측정에 있어 드레인에서의 부정합 정도를 고려한 정교한 측정 불확도 산출 방안을 제시하였다. 기존의 측정 불확도 산출 방법은 최적 성능을 위해 의도적인 부정합을 포함하는 전력증폭기의 정합상황을 정확히 반영하는데 한계를 가지고 있다. 이를 보완하기 위하여, 전력증폭기 드레인의 부정합 정도를 포함하는 복합 반사계수와 S-파라미터 측정 불확도를 활용한 종합적인 전력 측정 불확도를 제안하였으며, 3.7 GHz에서 동작하는 10 watt급 전력증폭기의 출력 전력을 측정한 실제 결과와 비교해 보았다. 결과적으로 제안한 합성 측정 불확도는 기존 불확도에 대비하여 10배 정도의 정교한 출력 전력의 불확도를 얻을 수 있었다.

• 한국재료학회지
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• 제13권1호
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• 한국정보통신학회논문지
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• 제19권12호
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• pp.2892-2898
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• 2015

양극성 이중 독립 게이트 실리콘 나노와이어 전계 효과 트랜지스터를 새롭게 제안한다. 제안한 트랜지스터는 극성 게이트와 제어 게이트를 가지고 있다. 극성게이트의 바이어스에 따라서 N형과 P형 트랜지스터의 동작을 결정할 수 있고 제어 게이트의 전압에 따라 트랜지스터의 전류 특성을 제어할 수 있다. 2차원 소자 시뮬레이터를 이용해서 양극성 전류-전압 특성이 동작하도록 두 개의 게이트들과 소스 및 드레인의 일함수를 조사했다. 극성게이트 4.75 eV, 제어게이트 4.5 eV, 소스 및 드레인 4.8 eV일 때 명확한 양극성 특성을 보였다.

• 복합신소재구조학회 논문집
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• 제6권3호
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• pp.86-94
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• 2015

A series of injection and drainage test were conducted on an circular acrylic tube to investigate the pressure generated by the accumulated fill materials inside a circular acrylic tube structure. The acrylic tube was filled by means of gravity filling with a slurry material having an average water content of 700%. The water head during the filling process was 1.8m and the bottom pressure during initial filling was 20.18kPa. The recorded stress at the sides of the acrylic tube was 17.89kPa during the filling process and was reduced to 13.58kPa during the leaving process. Continuous drainage of the acrylic tube has greatly influenced the stresses around the tube structure. As the water is gradually allowed to overflow, the generated pressure at the topmost pressure sensor of the tube was reduced further to 2.17kPa. Eventually, the initially liquid state slurry material transforms into plastic state after water has dissipated and substantial soil particles are deposited in the acrylic tube. The final water content of the deposited silt inside the acrylic tube after the test was 42%. It was found that the state of stresses(geo-static earth pressures) in the acrylic tube was anisotropic rather than isotropic.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2008년도 춘계 학술발표회 초청강연 및 논문집
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• pp.281-292
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• 2008

Prefabricated Board Drains (PBDs) recently become more widely used than conventional sand drains in improving soft ground because the PBD is more time and cost effective. The performance of PBDs is affected by disturbance in the adjacent soil formation during inserting mandrels, the intrusion of fine particles into filter fabric, and necking of the drain by excessive lateral pressure especially occurring in very deep clay formation such as the Busan New Port site. In this study, the PBD with double-core is introduced, which seems to overcome the shortcomings of usual single-core PBDs. An in-situ test program was established in the Busan New Port site, in which a set of the double-core PBDs and the single-core PBDs was installed to compare the efficiency of each of the drains. The discharge capacity of the double-core and the single-core PBDs was compared for various confining pressures in the modified Delft test and the chamber test. A series of CRS consolidation tests was performed in order to obtain profiles of void ratio-effective stress and void ratio-permeability relationships in the Busan New Port site that are used as input date in performing a numerical program ILLICON. The numerically simulated settlements of ground surface in the test site are in good agreement with those of in-situ measurements. In addition, the performance of the double-core and single-core PBDs has been experimentally and numerically compared in this paper.