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http://dx.doi.org/10.5515/KJKIEES.2014.25.6.646

Design and Fabrication of Ku-Band Power Amplifier Using GaN HEMT Die  

Kim, Sang-Hoon (Department of Wireless Communications Engineering, Kwangwoon University)
Kim, Bo-Ki (Department of Wireless Communications Engineering, Kwangwoon University)
Choi, Jin-Joo (Department of Wireless Communications Engineering, Kwangwoon University)
Jeong, Byeoung-Koo (Samsung Thales)
Tae, Hyun-Sik (Samsung Thales)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.25, no.6, 2014 , pp. 646-652 More about this Journal
Abstract
This paper presents a design and fabrication of Ku-band power amplifier using Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die. In order to fabricate the low-cost Ku-band power amplifier, a Printed Circuit Board(PCB) was used for input/output matching circuits instead of manufacturing process to use an expensive substrate. The measured output power is 42.6 dBm, the drain efficiency is 37.7 % and the linear gain is 7.9 dB under pulse operation at the frequency of 14.8 GHz. Under the continuous wave(CW) test, the output power is 39.8 dBm, the drain efficiency is 24.1 % and the linear gain is 7.2 dB.
Keywords
Ku-Band; GaN HEMT Die; Low-Cost; Power Amplifier;
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