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http://dx.doi.org/10.5394/KINPR.2003.27.1.081

The RF Power Amplifier Using Active Biasing Circuit for Suppression Drain Current under Variation Temperature  

Cho, Hee-Jea (Dept. of Radio Information and Communication Engineering, Korea Maritime University)
Jeon, Joong-Sung (Research Institute of Industry Technology, Korea Maritime University)
Sim, Jun-Hwan (Dept. of Radio Information and Communication Engineering, Korea Maritime University)
Kang, In-Ho (Dept. of Radio Information and Communication Engineering, Korea Maritime University)
Ye, Byeong-Duck (Division of Maritime Transportation Science, Korea Maritime University)
Hong, Tchang-Hee (Dept. of Radio Information and Communication Engineering, Korea Maritime University)
Publication Information
Journal of Navigation and Port Research / v.27, no.1, 2003 , pp. 81-86 More about this Journal
Abstract
In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.
Keywords
LDMOS; Active Biasing Circuit; RF Power Amplifier; Parallel Power Amplifier; LDMOS;
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