Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology |
Joung, Bong-Kyu
(Nano Electronic Future Technology Laboratory, Department of Electrical and Electronics Engineering, Chung Ang University)
Kang, Jeong-Won (Nano Electronic Future Technology Laboratory, Department of Electrical and Electronics Engineering, Chung Ang University) Hwang, Ho-Jung (Nano Electronic Future Technology Laboratory, Department of Electrical and Electronics Engineering, Chung Ang University) Kim, Sang-Yong (Department of Electrical and Electronics Engineering, Chung Ang University) Kwon, Oh-Keun (Department of Internet Information, Se Myung University) |
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