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http://dx.doi.org/10.6109/jkiice.2015.19.12.2892

Design of Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor  

Hong, Seong-Hyeon (Department of Electronic Engineering, Hankyong National University)
Yu, YunSeop (Department of Electrical, Electronic and Control Engineering, Hankyong National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.19, no.12, 2015 , pp. 2892-2898 More about this Journal
Abstract
We propose a new Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor(DIG Ambi-SiNWFET). The proposed transistor has two types of gate such as polarity gate and control gate. The polarity gate determines the operation that the gate bias controls NMOSFET or PMOSFET. The voltage of control gate controls the current characteristic of the transistor. We investigated systematically work functions of the two gates and source/drain to operate ambipolar current-voltage characteristics using 2D device simulator. When the work functions of polarity gate, control gate and source/drain are 4.75eV, 4.5eV, and 4.8eV, respectively, it showed the obvious ambipolar characteristics.
Keywords
Silicon nanowire transistor; tunneling; ambipolar; polarity gate; control gate; transistor design;
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