• 대한전자공학회논문지SD
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• 제38권7호
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• pp.464-472
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• 2001

집적도 향상을 위해 사용되는 비대칭 n-MOSFET를 0.35 ㎛ CMOS공정으로 제조하여 그 전기적 특성을 조사고 전기적 모델을 제시하였다. 비대칭형 n-MOSFET는 대칭형 n-MOSFET에 비해 포화영역의 드레인 전류는 감소하였으며, 선형영역의 저항은 증가하였다. 그리고 비대칭형 n-MOSFET에서 보다 낮은 기판 전류가 측정되었다. 측정결과를 찬조하여 비대칭 n-MOSFET를 회로설계에 용이하게 사용할 수 있도록 기존의 대칭형 소자 모델을 개선한 새로운 모델을 제시하였다. 이 모델링의 정확성을 MEDICI 시뮬레이션을 통해 확인하였고, 대부분의 게이트 폭 범위에서 계산된 비대칭 n-MOSFET의 포화 전류 값은 측정값과 거의 일치하였다.

• E2M - 전기 전자와 첨단 소재
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• 제12권8호
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• pp.39-45
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• 1999

Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

• 한국정보통신학회논문지
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• 제6권1호
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• pp.109-114
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• 2002

본 논문에서는 나노규모의 채널길이를 가지는 Si-기반 MOSFET의 문턱전압은 시뮬레이션하여 그 결과를 나타내었다. 180nm의 게이트 길이를 가지는 소자를 기본소자로 하여 정전압 스켈링과 평면 스켈링을 적용하여 소자를 축소하고 시뮬레이션 하였다. 이러한 MOSFET은 LDD(lightly doped drain)구조를 가지고 있으며, 이 구조는 드레인 영역에서의 전계의 크기와 단채널 효과를 줄여준다. 이 영역에서의 고전계현상은 축소에 기인한다. 이러한 소자들의 문턱전압을 조사하고 분석하였다. 이러한 분석은 IC의 응용한계 및 VLSI의 기본자료로 사용될 수 있을 것이다.

• 센서학회지
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• 제28권5호
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• pp.329-333
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• 2019

Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.579-582
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• 2005

In this study, the electrical characteristic of asymmetric high voltage MOSFET (AHVMOSFET) for display IC was investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length, and gate oxide thickness ($175{\AA}$, $350{\AA}$). In high temperature condition, drain current decreased over 30% and max transconductance deceased over 40%, and specific on-resistance increased over 30% in comparison with room temperature.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.96-99
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• 2012

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2008년도 춘계 학술발표회 초청강연 및 논문집
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• pp.435-441
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• 2008

More time is required for consolidating soft clay when its hydraulic conductivity around the vertical drains is reduced by soil disturbance. One of the methods to be proposed to solve such problem is the electro-osmotic flow application. This study presents the experimental results of model tests using a modified oedometer and a large-scale cylinder with a sand drain. Results show that the development of negative excessive pore water pressure due to the DC electrical field in saturated clay can be transformed to additional loads causing more consolidation settlement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1315-1317
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• 1998

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshold voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate bias stressing and under the gate and drain bias stressing. Also, we have quantitatively analized the degradation phenomena using by analytical method. we have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the poly-Si is prevalent in gate and drain bias stressed device.

• Geomechanics and Engineering
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• 제1권3호
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• pp.179-191
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• 2009

For a two-way drainage deposit under a surcharge load, it is possible to leave a layer adjacent to the bottom drainage boundary without prefabricated vertical drain (PVD) improvement and achieve approximately the same degree of consolidation as a fully penetrated case. This depth is designated as an optimum PVD installation depth. Further, for a two-way drainage deposit under vacuum pressure, if the PVDs are fully penetrated through the deposit, the vacuum pressure will leak through the bottom drainage boundary. In this case, the PVDs have to be partially penetrated, and there is an optimum installation depth. The equations for calculating these optimum installation depths are presented, and the usefulness of the equations is studied by using finite element analysis as well as laboratory model test results.

• International Journal of Fluid Machinery and Systems
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• 제5권3호
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• pp.109-116
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• 2012

Water hammer pumps can effectively use the water hammer phenomenon for water pumping. They are capable of providing an effective fluid transport method in regions without a well-developed social infrastructure. The results of experiments examining the effect of the geometric form of water hammer pumps by considering their major dimensions have been reported. However, these conventional studies have not fully evaluated pump performance in terms of pump head and flow rate, common measures of pump performance. The authors have focused on the effects on the pump performance of various geometric form factors in water hammer pumps. The previous study examined how the hydrodynamic characteristics was affected by the inner diameter ratio of the drive and lift pipes and the angle of the drive pipe, basic form factors of water hammer pumps. The previous papers also showed that the behavior of water hammer pump operation could be divided into four characteristic phases. The behavior of temporal changes in valve chamber and air chamber pressures according to the air volume in the air chamber located downstream of the lift valve was also clarified in connection with changes in water hammer pump performance. In addition, the effects on water hammer pump performance of the length of the spring attached to the drain valve and the drain pipe angle, form factors around the drain valve, were examined experimentally. This study focuses on the form of the lift valve, a major component of water hammer pumps, and examines the effects of the size of the lift valve opening area on water hammer pump performance. It also clarifies the behavior of flow in the valve chamber during water hammer pump operation.