• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.6
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• pp.646-652
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• 2014

This paper presents a design and fabrication of Ku-band power amplifier using Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die. In order to fabricate the low-cost Ku-band power amplifier, a Printed Circuit Board(PCB) was used for input/output matching circuits instead of manufacturing process to use an expensive substrate. The measured output power is 42.6 dBm, the drain efficiency is 37.7 % and the linear gain is 7.9 dB under pulse operation at the frequency of 14.8 GHz. Under the continuous wave(CW) test, the output power is 39.8 dBm, the drain efficiency is 24.1 % and the linear gain is 7.2 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.987-994
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• 2010

In this paper, a simple and effective active load-pull method is proposed, and the method to improve the efficiency of X-band power amplifier using harmonic control circuit is presented. The proposed active load-pull system mainly consists of directional coupler, phase shifter, short circuit, and power amplifier, and allows a user to access reflection coefficients near the edge of the Smith chart($\Gamma$=1) easily. The device used in this paper is Mitsubishi's GaAs FET MGF1801, and the operating frequency of the power amplifier is 9 GHz, The amplifier had output power of 21.65 dBm and drain efficiency of 24.9 % at class-A, and had output power of 21.46 dBm and drain efficiency of 53.3 % at class-AB. Harmonic control circuit is designed only second and third harmonic components because of the bandwidth limitation of the microwave components. The drain efficiency is improved as much as 6.4 % compared with class-AB power amplifier.

• Journal of Navigation and Port Research
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• v.27 no.1
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• pp.81-86
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• 2003

In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.

• Design & Manufacturing
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• v.11 no.2
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• pp.1-8
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• 2017

In this study, we applied microcellular foaming injection molding process to improve the performance of system air-conditioner drain fan which had been produced by injection molding process and studied the optimization of process conditions through 6-sigma process and response surface method (RSM) to reduce weight and deformation of products. Additive type, melt temperature, mold temperature, and injection screw shape were selected as the factor affecting the weight and deformation of the products by carrying out analysis of trivial many through ANOVA and design of experiment (DOE) method. Among the effect factor, we set the addictive type to Long G/F and screw shape to foaming screw which had the highest level of weight reduction and deformation reduction. The amount of foaming agent gas was set at 60 ml, which was the limit beyond which the weight of product did not decrease any more. For melt temperature and mold temperature, we studied the conditions where both weight and deformation were minimized using the RSM. As a result, we set the melt temperature to $250^{\circ}C$, fixed mold temperature to $20^{\circ}C$, and moving mold temperature to $40^{\circ}C$. The improvement effect was analyzed by appling the selected optimal conditions to the production process using the microcellular foaming injection molding. The results showed that the mean weight of product was measured to be 1,420g which was 19% lower than that measured in the current process. The standard deviations of the weights were found to be similar to those in the current process and it showed a low dispersion. The mean deformation was measured to be 0.9237mm, which represented a 57% reduction compared to the mean deformation in the current process, and the standard deviation decreased from 0.3298mm to 0.1398mm. Moreover, we analyzed the process capability for deformation, and the results showed that the short-term process capability increased from 2.73 to 6.60 which was even higher than targeted level of 6.0.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.802-807
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• 2014

In this paper, an accurate method to estimate the measurement uncertainty of a power amplifier was proposed. Because power amplifiers incorporate mismatch at the drain for the optimal performance, the general method is not enough to produce precise measurement uncertainty of the output power. In order to supplement this method, We suggest comprehensive power measurement uncertainty which is utilized by a complex reflection coefficient and measurement uncertainty of S-parameter which contain the mismatch at the drain on the power amplifier. After that, we compared it with real measurement results of the 10 watt power amplifier which operates on 3.7 GHz. As a result, suggested measurement uncertainty could obtain the uncertainty of output power near 10 times accurate in comparison with existing uncertainty calculation method.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2892-2898
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• 2015

We propose a new Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor(DIG Ambi-SiNWFET). The proposed transistor has two types of gate such as polarity gate and control gate. The polarity gate determines the operation that the gate bias controls NMOSFET or PMOSFET. The voltage of control gate controls the current characteristic of the transistor. We investigated systematically work functions of the two gates and source/drain to operate ambipolar current-voltage characteristics using 2D device simulator. When the work functions of polarity gate, control gate and source/drain are 4.75eV, 4.5eV, and 4.8eV, respectively, it showed the obvious ambipolar characteristics.

• Journal of the Korean Society for Advanced Composite Structures
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• v.6 no.3
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• pp.86-94
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• 2015

A series of injection and drainage test were conducted on an circular acrylic tube to investigate the pressure generated by the accumulated fill materials inside a circular acrylic tube structure. The acrylic tube was filled by means of gravity filling with a slurry material having an average water content of 700%. The water head during the filling process was 1.8m and the bottom pressure during initial filling was 20.18kPa. The recorded stress at the sides of the acrylic tube was 17.89kPa during the filling process and was reduced to 13.58kPa during the leaving process. Continuous drainage of the acrylic tube has greatly influenced the stresses around the tube structure. As the water is gradually allowed to overflow, the generated pressure at the topmost pressure sensor of the tube was reduced further to 2.17kPa. Eventually, the initially liquid state slurry material transforms into plastic state after water has dissipated and substantial soil particles are deposited in the acrylic tube. The final water content of the deposited silt inside the acrylic tube after the test was 42%. It was found that the state of stresses(geo-static earth pressures) in the acrylic tube was anisotropic rather than isotropic.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.03a
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• pp.281-292
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• 2008

Prefabricated Board Drains (PBDs) recently become more widely used than conventional sand drains in improving soft ground because the PBD is more time and cost effective. The performance of PBDs is affected by disturbance in the adjacent soil formation during inserting mandrels, the intrusion of fine particles into filter fabric, and necking of the drain by excessive lateral pressure especially occurring in very deep clay formation such as the Busan New Port site. In this study, the PBD with double-core is introduced, which seems to overcome the shortcomings of usual single-core PBDs. An in-situ test program was established in the Busan New Port site, in which a set of the double-core PBDs and the single-core PBDs was installed to compare the efficiency of each of the drains. The discharge capacity of the double-core and the single-core PBDs was compared for various confining pressures in the modified Delft test and the chamber test. A series of CRS consolidation tests was performed in order to obtain profiles of void ratio-effective stress and void ratio-permeability relationships in the Busan New Port site that are used as input date in performing a numerical program ILLICON. The numerically simulated settlements of ground surface in the test site are in good agreement with those of in-situ measurements. In addition, the performance of the double-core and single-core PBDs has been experimentally and numerically compared in this paper.