• 한국지구물리탐사학회:학술대회논문집
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• 2007.06a
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• pp.307-312
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• 2007

Seawater intrusion in estuarine regions is an important issue in protecting groundwater against salinity increase as well as in protecting construction materials against corrosion. For example, drain water ejected during accelerated consolidation for the improvement of soft ground can cause damages to farm land because the drain water from seawater intrusion zones contains salinity. In this study, we have employed correlation analysis between resistivity value and salinity of in situ pore water. The correlation analysis indicates that resistivity and salinity are in exponential relationship with good correlation. Therefore we suggest that rapid estimation of spatial distribution of NaCl is possible using resistivity data.

• Journal of Electrical Engineering and information Science
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• v.3 no.3
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• pp.391-395
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• 1998

The impact of LDD structure on the single-poly EEPROMs is investigated in this paper. The single-poly EEPROMs are fabricated using the 0.8$\mu\textrm{m}$ CMOS ASIC process. The single-poly EEPROMs with LDD structure have slower program and erase speeds, but the drain and gate stresses and the endurance characteristics of these devices are much better than those of the single-poly EEPROMs with single-drain structure. The single-poly EEPROMs with LDD structure do not require the process modifications and need no additional masks, hence can be used for microprocessors and logic circuits with low-density and low-cost embedded EEPROMs.

• Atmosphere
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• v.27 no.2
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• pp.251-258
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• 2017

The standard weighing raingauges have a capacity limit in measuring the amounts of precipitation. Exceptions are those using a siphon to drain the collected water during observations. To reduce the drain time of the siphon type or to overcome the hassles associated with the manual emptying of the bucket for measuring, the most of weighing gauges use a large bucket for storing of rainwater to be measured. To avoid the above-mentioned adverse requirements, we propose a paired barrel for a weighing raingauge. The paired barrel may improve the accuracy of the weighing raingauges by getting rid of their capacity limit and make the gauges smaller in size and lighter in weight than the conventional ones. We showed its proper function and the feasibility of realization by testing a prototype paired barrel.

• Proceedings of the Korean Geotechical Society Conference
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• 1997.06c
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• pp.1.1-16
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• 1997

This lecture summarizes the progress of the development of the different ground improvement techniques in Bangkok Plain and is reviewed in relation to the extensive deep wen pumping and the resulting piezometric drawdown at deeper depths. Case records of test embankments with sand drains, sand wicks and PVD are presented to inustrate the effectiveness of different types of vertical drains with surcharge. The use of prefsbicated drain seems more superior than the other types of sand drain. Construction of test embaxlkment, criteria for PVD selection and relevant laboratory testing techniques are discussed for formulating the specif'ication. Alternative teckuuque, such in, the use of deep chemical mixing is reviewed in terms of the efficiency of cement, lime and flyash as additive. Vacuum pre-loading with surcharge and elctro- osmotic consolidation are also explored as possible tectmiques to improve the engineering properties of soft Bangkok clay.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.271-272
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• 2008

We fabricated a pentacene thin-film transistor with Ni/Ag source/drain electrodes. Also, we obtained similar electrical characteristics as compared with source/drain electrode with Au. This device was found to have a field-effect mobility of about 0.021 $cm^2$/Vs, a threshold voltage of -5, -7 V, an subthreshold slope of 2.0, 4.5 V/decade, and an on!off current ratio of $3.6\times10^5$, $2.0\times10^6$.

• Journal of Information Display
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• v.6 no.4
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• pp.6-10
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• 2005

The dependence of hysteresis characteristics in low temperature poly-Si (LTPS) thin film transistors (TFTs) on the gate-source voltage (Vgs) or the drain-source voltage (Vds) bias is investigated and discussed. The hysteresis levels in both p-type and n-type LTPS TFTs are independent of Vds bias but increase as the sweep range of Vgs increases. It has been found that the hysteresis in both p-type and n-type LTPS TFTs originated from charge trapping and de-trapping in the channel region rather than at the source/drain edges.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.367-372
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• 1999

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.141-143
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• 2017

Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.4
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• pp.423-428
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• 2015

To identify locations and causes of interference among parts of an indoor air-conditioning unit, a 3D tolerance analysis was performed and optimized with respect to assembly gaps and the tolerance of each part. The maximum value of the defect rate resulting from the tolerance analysis was found to be 72.6 at the assembly portion of the body and drain. The maximum displacement caused by the thermal deformation during a heating operation was calculated to be approximately 1 mm by using finite element analysis (FEA). Therefore, it is possible that an interference among the assembled parts occurs. The tolerance of the drain was modified by the results of the sensitivity analysis. As a result, the defect rate was greatly reduced to 0.03. Through the FEA results of the indoor air-conditioning unit, it was shown that the improved tolerance of the drain decreased the interference among the assembled parts even though thermal deformation occurs during operation.