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http://dx.doi.org/10.4313/TEEM.2011.12.4.267

XPS Study of MoO3 Interlayer Between Aluminum Electrode and Inkjet-Printed Zinc Tin Oxide for Thin-Film Transistor  

Choi, Woon-Seop (School of Display Engineering, Hoseo University)
Publication Information
Transactions on Electrical and Electronic Materials / v.12, no.6, 2011 , pp. 267-270 More about this Journal
Abstract
In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.
Keywords
Oxide thin-film transistor; Interface; Metallic interlayer; X-ray photospectroscopy; Molybdenum oxide;
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1 G. L. Frey, K. J. Reynolds, and R. H. Friend, Adv. Mater. 14, 265 (2002) [http://dx.doi.org/10.1002/1521-4095(20020219)14:4<265::aid-adma265>3.0.co;2-m].   DOI   ScienceOn
2 C. W. Chu, S. H. Li, C. W. Chen, V. Shrotriya, and Y. Yang, Appl. Phys. Lett. 87, 193508 (2005) [http://dx.doi.org/10.1063/1.2126140].   DOI   ScienceOn
3 J. S. Lee, W. S. Choi, Appl. Phys. A submitted.
4 W. Gruenert, A. Y. Stakheev, R. Feldhaus, K. Anders, E. S. Shpiro, and K. M. Minachev, J. Phys. Chem. 95, 1323 (1991) [http://dx.doi.org/10.1021/j100156a054].   DOI
5 R. Tokarz-Sobieraj, K. Hermann, M. Witiko, A. Blume, G. Mestl, R. Schlogl, Surf. Sci. 489, 107 (2001).   DOI   ScienceOn
6 J. A. Thornton, J. Chin, Ceram. Bull. 56, 504 (1977).
7 A. Shalav, B. S. Richards, T. Trupke, K. W. Kramer, and H. U. Gudel, Appl. Phys. Lett. 86, 013505 (2005) [http://dx.doi.org/10.1063/1.1844592].   DOI   ScienceOn
8 M. Kunat, S. Gil Girol, T. Becker, U. Burghaus, and C. Woll, Phys Rev B 66, 081402 (2002) [http://dx.doi.org/10.1103/Phys-RevB.66.081402].   DOI   ScienceOn
9 J. F. Wager, Science 300, 1245 (2003) [http://dx.doi.org/10.1126/science.1085276].   DOI   ScienceOn
10 J. Y. Kim, K. Lee, N. E. Coates, D. Moses, T. Q. Nguyen, M. Dante, and A. J. Heeger, Science 317, 222 (2007) [http://dx.doi.org/10.1126/science.1141711].   DOI   ScienceOn