• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.342-343
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• 2012

We studied the Drain-Induced-Barrier-Lowering (DIBL) effect by different drain engineering. One other drain engineering is symmetric source-drain n-channel MOSFETs (SSD NMOSs), the other drain engineering is asymmetric source-drain n-channel MOSFETs (ASD NMOSs). Devices were fabricated using state of art 40 nm dynamic-random-access-memory (DRAM) technology. These devices have different modes which are deep drain junction mode in SSD NMOSs and shallow drain junction mode in ASD NMOSs. The shallow drain junction mode means that drain is only Lightly-Doped-Drain (LDD). The deep drain junction mode means that drain have same process with source. The threshold voltage gap between low drain voltage ($V_D$=0.05V) and high drain voltage ($V_D$=3V) is 0.088V in shallow drain junction mode and 0.615V in deep drain junction mode at $0.16{\mu}m$ of gate length. The DIBL coefficients are 26.5 mV/V in shallow drain junction mode and 205.7 mV/V in deep drain junction mode. These experimental results present that DIBL effect is higher in deep drain junction mode than shallow drain junction mode. These results are caused that ASD NMOSs have low drain doping level and low lateral electric field.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.03a
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• pp.1256-1263
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• 2010

Suction Drain Method is soft ground improvement technique, in which a vacuum pressure can be directly applied to the Vertical Drain Board to promote consolidation and strengthening the soft ground. This method does not require a surcharge load, different to embankment or Preloading Method. In this study, ground improvement efficiency of suction drain method was estimated when duplex loading pressure with vacuum and pressure. During suction drain method process, surface settlement and pore pressure were monitored, and cone resistance test as well as water content were also measured after the completion of Suction Drain Method treatment.

• Proceedings of the Korean Geotechical Society Conference
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• 2009.09a
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• pp.1126-1131
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• 2009

Suction Drain Method is soft ground improvement technique, in which a vacuum pressure can be directly applied to the Vertical Drain Board to promote consolidation and strengthening the soft ground. This method does not require a surcharge load, different to embankment or vertical drain method. In this study, Using Suction-CAIN program, which optimize th Suction Drain method, estimate validity Suction Drain method on deep soft ground

• Journal of the Korean Society of Environmental Restoration Technology
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• v.9 no.1
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• pp.1-13
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• 2006

The recent environmental protection issue has diminished the supply of sand for soft ground improvements so much that the prices of sand have shown a sudden rise. Plastic material is one of substitutes for sand material, but plastic is nonperishable and doubtable if it has potential environmental hormone disrupting substances. Moderate-priced natural fiber drain board made with coconut coir and jute filter are in the spotlight recently as an alternative material for sand and plastic drain board etc. Natural fiber drain has not only competitive price but also a characteristic of assimilation into the soils after finishing of its own function. Discharge capacity of the fiber drain board evaluated by triaxial type discharge capacity test was relatively lower than that of plastic drain board. Nevertheless, settlement and pore pressure dissipation behaviors of the fiber drain board and the plastic drain board which were installed in the clayey soil during the composite discharge capacity test were almost similar. It was also found that biodegradation of the fiber drain board was in progress until 18 month after installation in the clayey soil, but they had still enough engineering properties to use at field.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1357-1359
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• 2001

0.2${\mu}m$ 이하의 최소 선폭을 가지는 소자를 구현할 때 drain induced barrier lowering (DIBL)이나 hot electron effect와 같은 short channel effect (SCE)가 나타나며 이로 인하여 소자의 신뢰성이 악화되기도 한다. 이를 개선하기 위한 방법 중 하나가 silicon selective epitaxial growth (SEG)를 이용한 elevated source/drain (ESD) 구조이다. 본 연 구에서는 silicon selective epitaxial growth를 이용하여 elevated source/drain 구조를 갖는 MOSFET 소자와 일반적인 MOSFET 구조를 갖는 소자와의 차이를 elevated source/drain의 높이 변화에 따른 전류 전압 특성을 이용하여 비교, 분석하였으며 그 결과 elevated source/drain 구조가 short channel effect를 감소시킴을 확인할 수 있었다.

• Proceedings of the Korean Geotechical Society Conference
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• 2009.03a
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• pp.692-701
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• 2009

The use of vertical drain method to improve the soft soil ground has been continuously increased in Korea such as Busan New Port, Saemangeum reclamation project and so on in Korea. Especially PBD(Plastic Board Drain), one of the vertical drain, has been widely used due to the economic feasibility, construction compatibility and quality control. However in case of using PBD, discharge capacity reduction caused by creep deformation of the PBD filter, bending, kinking and so on can be occurred. Therefore the purpose of this study is to solve these problems by developing Deformation-Compatible Vertical Drain, DCVD which allows to deform with consolidation settlement without bending and kinking of vertical drain. In order to investigate the performance of DCVD developed in this study, discharge capacity test, centrifuge model test and complex discharge capacity test for both PBD and DCVD are performed and the results are compared.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Journal of the Korean Geosynthetics Society
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• v.9 no.3
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• pp.67-75
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• 2010

The tensile strength, permeability and discharge capacity of biodegradable plastic drain boards made with poly lactic acid (PLA) have been tested and verified prior to their usage at field. Based on test results, the tensile strength of biodegradable plastic drain board made with PLA has relatively lower tensile strain and tensile strength than those of plastic drain board. Performance of PLA filter having good permeability and low opening size is proper for the filter of vertical drain board. In case of improving stiffness of PLA filter, biodegradable plastic drain board also satisfies required discharge capacity as use of vertical drain board too.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.09b
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• pp.141-146
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• 2010

To investigate the effect of drainage spacing and smear on the rate of consolidation, a large consolidation chamber and mandrel insertion device were developed. After the occurrence of smear by installation of sand drain, model ground was consolidated in either overconsolidated or normally consolidated state. As smear effect increases and thus drain spacing decreases, total settlement increase in overconsolidated state but has no effect in normally consolidated state. Efficiency of vertical drain decreases and consequently consolidation time increases in all tests as smear effect becomes significant.