• Journal of the Korean Institute of Navigation
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• v.12 no.2
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• pp.68-101
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• 1988

In spite of the widespread use of stiffend plates in ship structures, it is very difficult to analysis these directly. So, in conventional analysis of plate structures, above structures are used to be idealized as orthotropic plate or grillage structures. Lately, the development of large computers, it is able to apply the optimum techniques to structural design. In this paper, the double bottom structure of Bulk Carrier was idealized into flat grillage which is composed of intersecting beam stiffencers primarily loaded mormal to its surface. And strength analysis was carried out by using the finite element method based on displacement. And further, according to variation of floor space and double tobbon heightm, the optimum design was carrid out by using Hooke and Jeeves direct search method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.1-6
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• 2008

A compact analytical model of the threshold voltage for long-channel Asymmetric Double-Gate(ADG) MOSFET is presented. In contrast to the previous models, channel doping and carrier quantization are taken into account. A more compact model is derived by utilizing the potential distribution linearity characteristic of silicon film at threshold. The accuracy of the model is verified by comparisons with numerical simulations for various silicon film thickness, channel doping concentration and oxide thickness.

• Journal of Positioning, Navigation, and Timing
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• v.13 no.3
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• pp.245-256
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• 2024

Following the introduction of civilian navigation, the commercial Global Navigation Satellite System (GNSS) receivers' market has been expanding in various fields such as autonomous driving and smart cities. With improved receiver performance and widespread use of GNSS, the configurations of base and rover receivers are becoming more complex. As a result, user must consider combinations of base stations with different qualities, costs, and performances. To address these issues, we conducted zero-baseline tests to analyze the double-differenced code-pseudorange noise of various receiver combinations, ranging from low- to high-cost. The results showed that the noise varied depending on the receiver combination. Notably, receivers from the same manufacturer exhibited similar noise and positioning errors despite significant price differences. We also found that the double-differenced noise of all receiver combinations was correlated with the Carrier-to-Noise Density Ratio (C/N0), the satellite elevation angle, and the Doppler shift, and it did not perfectly follow a normal distribution. Further analysis based on Modified Allan Deviation (MDEV) showed that different types of noise were observed for each receiver combination and the double-differenced noise and positioning errors have similar statistical characteristics. From this study, the importance of receiver combinations and their various characteristics can be better understood.

• Journal of Advanced Navigation Technology
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• v.21 no.6
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• pp.601-607
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• 2017

This study performed fault test on global positoining system (GPS) carrier phase measurements, which is a preprocessing step to generate the positioning correction information based on the global navigation satellite system (GNSS) infrastructure. The existing carrier acceleration ramp step test (CARST) method affects the test result by using the mean value to eliminate the receiver clock error. In this regard, this study applied differencing and compared its results with those of the existing CARST. The fault simulation that applied artificial faults to the actual data found that the fault could be detected independently on each satellite when difference method was applied, and the single difference CARST and the double difference CARST produced similar results. The comparison with the existing method using actual data demonstrated the strengths and weaknesses of satellite and station single difference. Nevertheless, it is our understanding that it would require an additional analysis to determine whether the results were affected by the satellite or receiver clock error.

• Polymer(Korea)
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• v.36 no.6
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• pp.699-704
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• 2012

Double-layered polymeric carrier was designed for release control of hydrophilic drug in oral administration. Biopolymeric chitosan and alginate were examined as polar absorbents, poly(D,L-lactide) as a hydrophobic shell, and theophylline and diclofenac sodium as loading drugs. The fabrication of the carriers was prepared in the form of double-layered microsphere for delayed and successively extended release, which consisted of outer shell of poly(D,L-lactide) and inner core of alginate or chitosan with drugs. Morphologies and drug-release behaviors of the carriers were investigated, which were influenced by a combination of polarity between carrier and drug. It was confirmed that the relative polarities of the carriers, the drugs, and the environmental pH affected significantly the drug-release property.

• Journal of the Society of Naval Architects of Korea
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• v.28 no.1
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• pp.125-138
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• 1991

In this paper, an efficient method for the analysis of damage and strength of double bottom structure in stranding is described by using idealized structural unit method. Also a procedure for the determination of the effective double bottom height which is required in order to protect the inner-bottom plate is proposed. In the comparison between the present solution and he existing experimental and numerical results in stranding, its observed that the present method gives reasonable results requiring very shorts computiong times. The present method is then applied to the double bottom structure of 40K product oil carrier which is designed by the double skin design concept as an example. By performing the series of analysis, the influence of vertical member space, plate thickness and double bottom height on the energy absorption capacity of the double bottom structure in stranding is investigated. Also the minimum double bottom height with varying each design variable Is calculated based on the above result.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.17-24
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• 2004

Quantum effects in the poly-gate are analyzed in two dimensions using the density-gradient method, and their impact on the short-channel effect of double-gate MOSFETs is investigated. The 2-D effects of quantum mechanical depletion at the gate to sidewall oxide is identified as the cause of large charge-dipole formation at the corner of the gate. The bias dependence of the charge dipole shows that the magnitude of the dipole peak-value increases in the subthreshold region and there is a large difference in carrier and potential distribution compared to the classical solution. Using evanescent-nude analysis, it is found that the quantum effect in the poly-gate substantially increases the short-channel effect and it is more significant than the quantum effect in the Si film. The penetration of potential contours into the poly-gate due to the dipole formation at the drain side of the gate corner is identified as the reason for the substantial increase in short-channel effects.

• Journal of Satellite, Information and Communications
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• v.8 no.2
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• pp.36-43
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• 2013

In this study, the high current behaviors and double snapback mechanism of gate grounded_extended drain n-type MOSFET(GG_EDNMOS) device were analyzed in order to realize the robust electrostatic discharge(ESD) protection performances of high voltage operating display driver IC(DDIC) chips. Both the transmission line pulse(TLP) data and the thermal incorporated 2-dimensional simulation analysis as a function of ion implant conditions demonstrate a characteristic double snapback phenomenon after triggering of bipolar junction transistor(BJT) operation. Also, the background carrier density is proven to be a critical factor to affect the high current behavior of the GG_EDNMOS devices.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.