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High Current Behavior and Double Snapback Mechanism Analysis of Gate Grounded Extended Drain NMOS Device for ESD Protection Device Application of DDIC Chip  

Yang, Jun-Won (세한대학교 컴퓨터교육과)
Kim, Hyung-Ho (세한대학교 컴퓨터교육과)
Seo, Yong-Jin (세한대학교 나노정보소재연구소)
Publication Information
Journal of Satellite, Information and Communications / v.8, no.2, 2013 , pp. 36-43 More about this Journal
Abstract
In this study, the high current behaviors and double snapback mechanism of gate grounded_extended drain n-type MOSFET(GG_EDNMOS) device were analyzed in order to realize the robust electrostatic discharge(ESD) protection performances of high voltage operating display driver IC(DDIC) chips. Both the transmission line pulse(TLP) data and the thermal incorporated 2-dimensional simulation analysis as a function of ion implant conditions demonstrate a characteristic double snapback phenomenon after triggering of bipolar junction transistor(BJT) operation. Also, the background carrier density is proven to be a critical factor to affect the high current behavior of the GG_EDNMOS devices.
Keywords
ESD (Electrostatic discharge); GG_EDNMOS (Gate Grouned_Extended Drain N-type MOSFET); TLP (Transmission Line Pulse); DDIC (Display Driver IC); BJT (Bipolar Junction Transistor); Double Snapback; Latch-up;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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