Browse > Article

Analytical Model for the Threshold Voltage of Long-Channel Asymmetric Double-Gate MOSFET based on Potential Linearity  

Yang, Hee-Jung (Department of Information Electronic Eng., Ewha Womans University)
Kim, Ji-Hyun (Department of Information Electronic Eng., Ewha Womans University)
Son, Ae-Ri (Department of Information Electronic Eng., Ewha Womans University)
Kang, Dae-Gwan (Hynix Semiconductor Inc.)
Shin, Hyung-Soon (Department of Information Electronic Eng., Ewha Womans University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.2, 2008 , pp. 1-6 More about this Journal
Abstract
A compact analytical model of the threshold voltage for long-channel Asymmetric Double-Gate(ADG) MOSFET is presented. In contrast to the previous models, channel doping and carrier quantization are taken into account. A more compact model is derived by utilizing the potential distribution linearity characteristic of silicon film at threshold. The accuracy of the model is verified by comparisons with numerical simulations for various silicon film thickness, channel doping concentration and oxide thickness.
Keywords
threshold voltage model; asymmetric; double-gate MOSFETs; semiconductor device modeling;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Q. Chen, et al., "A physical Short-Channel Threshold Voltage Model for Undoped Symmetric Double-Gate MOSFETs," IEEE Trans. Electron Devices, Vol. 50, No. 7, p. 1631, 2003   DOI   ScienceOn
2 D. Park, "Introduction to Quantum Theory," McGraw-hill. 1974
3 Y. Taur, "Analytic Solutions of Charge and Capacitance in Symmetric and Asymmetric Double-Gate MOSFETs," IEEE Trans. Electron. Devices, Vol. 48, No. 12, p. 2861, 2001   DOI   ScienceOn
4 T. Poiroux, M. Vinet, O. Faynot, J. Widiez, J. Lolivier, B. Previtali, T. Ernst, and S. Deleonibus, "Multigate silicon MOSFETs for 45 nm node and beyond," Solid-State Electronics, Vol. 50, No. 1, p. 18, 2006   DOI   ScienceOn
5 J. Autran, D. Munteanu, O. Tintori, S. Harrison, E. Decarre, and T. Skotnicki, "Quantum- Mechanical Analytical Moddeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates," in Proc. of MSM 2004, p. 163, 2004
6 D. Frank, R. Dennard, E. Nowak, P. Solomon, Y. Taur, and H. Wong, "Device Scaling Limits of Si MOSFETs and their Application Dependencies," Proc. IEEE, Vol. 89, No. 3, p. 259, 2001   DOI   ScienceOn
7 D. Munteanu, J. Autran, S. Harrison, and T. Skotnicki, "Unified Analytical Model of Threshold Voltage in Symmetric and Asymmetric Double-Gate MOSFETs," in Proc. of ULIS, p. 35, 2003
8 Q. Chen and J. Meindl, "A Comparative Study of Threshold Variations in Symmetric and Asymmetric Undoped Double-Gate MOSFETs," in Proc. IEEE Int. SOI Conf., p. 30, 2002