• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.979-986
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• 2003

Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.124-129
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• 2007

Dielectric and piezoelectric properties of $0.57Pb(Sc_{1/2}Nb_{1/2})O_{3}-0.43PbTiO_{3}$, which is the morphotropic phase boundary composition for the PSN-PT system, were investigated as a function of $Fe_{2}O_{3},\;Nb_{2}O_{5}\;and\;MnO_{2}$ addition 0 wt% to 0.9 wt%. The maximum dielectric constant of ${\varepsilon}_{33}/{\varepsilon}_{o}=2054$ and the minimum dielectric loss of $tan{\delta}=0.37\;%$ at room temperature were obtained at 0.1 wt% of $Fe_{2}O_{3}$ and 0.5 wt% of $MnO_{2}$ addition, respectively. With addition of 0.5 wt% $Nb_{2}O_{5}$ and $0.5\;wt%\;MnO_{2}$, the electromechanical coupling factor $k_{p}$ and mecanical quality factor $Q_{m}$ were significantly increased, respectively. The maximum electromechanical coupling factor $k_{p}=61.5\;%$ was obtained by addition of $Nb_{2}O_{5}$ and high mechanical quality factor $Q_{m}=919$ was obtained by addition of $MnO_{2}$. The $Q_{m}(=919)$ value is 3.3 times larger than that of non-doped 0.57PSN-0.43PT ceramics.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.71-75
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• 2006

The yellow emitting OLED using GDI602:Rubrene(10%) material has been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenyl-amine] as a hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl -4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, yellow emission material was deposited using GDI602 as a host material and Rubrene(10%) as a dopant. Finally, small molecular OLED with the structure of $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ was obtained by in-situ successive deposition of $Alq_{3}$, LiF and Al as the electron transport material, electron injection material and cathode. The yellow OLED fabricated in our experiments showed the color coordinate of CIE(0.50, 0.49), the luminance of $2300\;Cd/m^{2}$ and the power efficiency of 0.7 lm/W at 10 V with the peak emission wavelength of 562 nm.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• Journal of Adhesion and Interface
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• v.3 no.3
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• pp.22-29
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• 2002

UV curable coating system described here consists of double layers, namely under layer and top laser coatings. The former consists of organic-inorganic conductive materials and the latter consists of multifunctional acrylates. Transparent double layer coatings were prepared on the transparent substrates i.e. PMMA, PC, PET etc. by the wet and wet coating procedure. Their surface resistances and film properties were measured as a function of the top layer thickness and relative humidity. As the thickness of the top layer was less than $10{\mu}m$, the surface resistance in the range of $10^8{\sim}10^{10}{\Omega}/cm^2$ was obtained. The surface properties of the two-layer coating were remarkably improved compared with the single layer coating. The effects of migration of conducting materials on the film properties of multilayer coating were investigated by using contact angle and Fourier transform infrared/attenuated total reflection(FT-IR/ATR). It was found that the migration of dopant(dodecyl benzenesulfonic acid, DBSA) molecules were occurred from film-substrate interface to film-air interface in the organic conductive coating system but not in the inorganic one.

• Membrane Journal
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• v.6 no.4
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• pp.258-264
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• 1996

Polyanilines were prepared by the oxidative polymerization in the presence of ammonium persulfate as an oxidant. After dehydration, a doping was carried out by mixing the polymer solution with dopants and immersing into aqueous dopant solutions. Using various riopants, the d-spacing of polyanilines can be controlled from $3.72{\AA}$ to $4.844{\AA}$. The d-spacing of polyanilines with polymeric or bulky dopants was larger than that of as-cast polyaniline. The characterization of the physical properties were confirmed by Fourier transform infrared spectroscopy (FT-IR), differential scanning calorimetry (DSC), dielectric analyzer (DEA) etc. Annealed polyaniline membrane exhibited the oxygen permeability of 0.072 barrer and the oxygen selectivity to nitrogen was 6.87. For the gas separation of polyanilines with polymeric or bulky riopants, the permeability increased while the selectivity detereased. Permeability can be readily controlled by the use of bulky dopants.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.413-416
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• 2008

A synthesis route to ordered mesoporous carbons with controllable nitrogen content has been developed for high-performance EDLC electrodes. Nitrogen-doped ordered mesoporous carbons (denoted as NMC) were prepared by carbonizing a mixture of two different carbon sources within the mesoporous silica designated by KIT-6. Furfuryl alcohol was used as a primary carbon precursor, and melamine as a nitrogen dopant. This synthesis procedure gave cubic Ia3d mesoporous carbons containing nitrogen as much as 13%. The carbon exhibited a narrow pore size distribution centered at 3-4 nm with large pore volume (0.6-1 cm3 g-1) and high specific BET surface area (700-1000 m2 g-1). Electrochemical behaviors of the NMC samples with various N-contents were investigated by a two-electrode measurement system at aqueous solutions. At low current density, the NMC exhibited markedly increasing capacitance due to the increase in the nitrogen content. This result could be attributed to the enhanced surface affinity between carbon electrode and electrolyte ions due to the hydrophilic nitrogen functional groups. At high current density conditions, the NMC samples exhibited decreasing specific capacitance against the increase in the nitrogen content. The loss of the capacitance with the N-content may be explained by high electric resistance which causes a significant IR drop at high current densities. The present results indicate that the optimal nitrogen content is required for achieving high power and high energy density simultaneously.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1117-1122
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• 1999

Amorphous Si and Co/Ti bilayers were sequentially evaporated onto 5- 10nm thick $\textrm{CoSi}_{2}$ and rapidly thermal-annealed(RTA) to form Co-polycide electrodes. Then, MOS capacitors were fabricated by doping poly-Si using SADS method. The C-V and leakage-current characteristics of the capacitors depending upon the RTA conditions were measured to study the effects of thermal stability of $\textrm{CoSi}_{2}$ and dopant redistribution on electrical properties of Co -polycide gates. Capacitors RTAed at $700^{\circ}C$ for 60-80 sec., showed excellent C-V and leakage-current characteristics due to degenate doping of poly-Si layers. But for longer time or at higher temperature, their electrical properties were degraeded due to $\textrm{CoSi}_{2}$ decomposition and subsequent Co diffusion. When making Co-polycide gate electrodes by SADS, not only degenerate doping of poly-Si layer. but also suppression of have been shown to be very critical.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.1-10
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• 2000

A rigorous modeling of ultra-low energy implantation is becoming increasingly more important as devices shrink to deep submicron dimensions. In this paper, we have developed an efficient three-dimensional Monte Carlo ion implantation model based on a modified Binary Collision Approximation(BCA). To this purpose, the modified electronic stopping model and the multi-body collision model have been taken into account in this simulator. The dopant and damage profiles show very good agreement with SIMS(Secondary Ion Mass Spectroscopy) data and RBS(Rutherford Backscattering Spectroscopy) data, respectively. Moreover, the ion distribution replica method has been implemented into the model to get a computational efficiency in a 3D simulation, and we have calculated the 3D Monte Carlo simulation into the topographically complex structure.