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http://dx.doi.org/10.4313/JKEM.2003.16.11.979

Effect of Gd2O3 and Sm2O3 Addition on the Properties of CeO2  

최광훈 (경성대학교 재료공학과)
이주신 (경성대학교 재료공학과)
류봉기 (부산대학교 재료공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.11, 2003 , pp. 979-986 More about this Journal
Abstract
Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.
Keywords
$Gd_{2}O_{3]$-doped $CeO_2$; $Sm_{2]O_{3]$-doped $CeO_2$; Sintering behavior; Electrical properties;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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