• Title/Summary/Keyword: Direct-conversion mixer

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Design and analysis of UWB Receiver's LNA(Low Noise Amplifier) and Mixer using RF Front-end (RF Front-end를 응용한 UWB(초광대역) 수신부의 LNA와 Mixer에 대한 분석 및 설계)

  • Kwak, Jae-Kwang;Ko, Kwang-Cheol
    • Proceedings of the IEEK Conference
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    • 2004.06a
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    • pp.225-228
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    • 2004
  • This paper has been studied about UWB(Ulra wide-band)'s LNA(Low Noise Amplifier) and Mixer. The UWB is a new technology that is being pursed for both commercial and military purposes. Direct conversion architectures that convert RF signals have potential to achieve such terminals, because they eliminate the need for non-programmable image-rejection filters and IF channel filters. And this architecture promises better performance in power, size, and cost than existing heterodyne - based receivers. This Receiver architectures combines low-noise amplifier, mixer. And then this paper has designed suitable UWB's LNA and Mixer.

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An Integrated High Linearity CMOS Receiver Frontend for 24-GHz Applications

  • Rastegar, Habib;Ryu, Jee-Youl
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.595-604
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    • 2016
  • Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

A Design of Monolithic LNB Downconverter Using Self Oscillating Mixer for DBS Application (SOM을 이용한 DBS위성통신용 LNB Downconverter의 설계)

  • 조재현;양홍선;박창열;박정호
    • Proceedings of the IEEK Conference
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    • 2002.06a
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    • pp.435-438
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    • 2002
  • A design of Ku-band(11.7~12.20Hz) monolithic microwave integrated circuit(MMIC) low noise block(LNB) downconverter using self oscillating mixer (SOM) for direct broadcast satellite(DBS) application is presented The proposed LNB downconverter is composed of low noise amplifier(LNA), image reject filter(IRF), SOM , low pass filter(LPF). The conversion gain is 30dB , VSn is less than 1.7: 1 and overall noise figure is less than 1.2dB.

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System Level Design of Multi-standard Receiver Using Reconfigurable RF Block

  • Kim, Chang-Jae;Jang, Young-Kyun;Yoo, Hyung-Joun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.3
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    • pp.174-181
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    • 2004
  • In this paper, we review the four receiver architectures and four methods for multi-standard receiver design. Propose reconfigurable RF block can be used for both low-IF and direct conversion architecture. Also, using reconfigurable mixer method, it can be operated at $2{\sim}6$ GHz range for multi-standard receiver. It consists of wideband mixer, filter, and automatic gain control amplifier and to get wide-band operation, $2{\sim}6$ GHz, wide-band mixer use flexible input matching method. Besides, to design multi-standard receiver, LNA bank that support each standard is necessary and it has good performance to compensate the performance of wide-band mixer. Finally, we design and simulate proposed reconfigurable RF block and to prove that it has acceptable performances for various wireless standards, the LNA bank that supports both IEEE 802.11a/b/g and WCDMA is also designed and simulated with it.

0.18mm CMOS LNA/Mixer for UHF RFID Reader (UHF RFID 리더를 위한 0.18mm CMOS LNA/Mixer)

  • Woo, Jung-Hoon;Kim, Young-Sik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.2
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    • pp.45-49
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    • 2009
  • In this paper, a direct down conversion LNA/Mixer has been designed and tested for 900Mhz UHF RFID application. The designed circuit has been implemented in 0.18um CMOS technology with 3.3V operation. In this work, a common gate input architecture has been used to cope with the higher input self jamming level. This LNA/Mixer is designed to support two operating modes of high gain mode and low gain mode according to the input jamming levels. The measured results show that the input referred P1dBs are 4dBm of high gain mode and 11dBm of low gain mode, and the conversion gains are 12dB and 3dB in high and low gain mode respectively The power consumptions are 60mW for high gain mode and 79mW for low gain mode. The noise figures are 16dB and 20dB in high gain mode and low gain mode respectively.

Wideband VHF and UHF RF Front-End Receiver for DVB-H Application

  • Park, Joon-Hong;Kim, Sun-Youl;Ho, Min-Hye;Baek, Dong-Hyun
    • Journal of Electrical Engineering and Technology
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    • v.7 no.1
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    • pp.81-85
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    • 2012
  • This paper presents a wideband and low-noise direct conversion front-end receiver supporting VHF and UHFbands simultaneously. The receiver iscomposed of a low-noise amplifier (LNA), a down conversion quadrature mixer, and a frequency divider by 2. The cascode configuration with the resistor feedback is exploited in the LNA to achieve a wide operating bandwidth. Four gainstep modesare employed using a switched resistor bank and a capacitor bank in the signal path to cope with wide dynamic input power range. The verticalbipolar junction transistors are used as the switching elements in the mixer to reduce 1/f noise corner frequency. The proposed front-end receiver fabricated in 0.18 ${\mu}m$ CMOS technology shows very low minimum noise figureof 1.8 dB and third order input intercept pointof -12dBm inthe high-gain mode of 26.5 dBmeasured at 500 MHz.The proposed receiverconsumeslow current of 20 mA from a 1.8 V power supply.

Design of a RF Front-End for 2.45GHz Band using Sub-harmonic Active Mixer (Sub-harmonic 능동형 혼합기를 이용한 2.45GHz 직접변환 수신기용 RF Front-End 설계 방법에 관한 연구)

  • Lim, Tae-Seo;Ko, Jae-Hyeong;Jung, Hyo-Bin;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.7
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    • pp.1235-1240
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    • 2008
  • In this paper, we presented an active RFID system in 2.45GHz range including LNA, Mixer and gain block. And in this work, a link budget model for RFID applications are proposed. We describe the detailed design and implementation of our system. Our components in RFID system has features such as low Noise Figure, reliable energy budget, and standard compliance with ISO 18000-4. Our receiver is effective for development and evaluation of prototype applications because of the flexibility of the design hardware. So, our platform will be suitable for versatile item management applications.

Design and Implementation of a Near Zero IF Sub-harmonic Cascode FET Mixer for 2.4 GHz WLL Base-Station (Near Zero IF를 갖는 2.4 GHz WLL 기지국용 하모닉 Cascode FET 혼합기 설계 및 제작)

  • Lee, Hyok;Jeong, Youn-Suk;Kim, Jeong-Pyo;Choi, Jea-Hoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.5
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    • pp.472-478
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    • 2003
  • In this paper, a near zero If mixer was designed in cascode structure by using two single-gate FETs. Since it is driven by the second order harmonic of LO signal, a sub-harmonic cascode FET mixer has good LO-RF port isolation characteristic. In order to solve DC offset of a homodyne system, near zero If is used instead of zero If and the mixer is driven by sub-harmonic of LO signal. As RF input power was -30 dBm and LO power was 6 dBm, the designed mixer had 6.7 dB conversion gain, 8.4 dB noise figure, 31.5 dB LO-RF port isolation, -1.9 dBm lIP3 and -2.8 dBm IIP2.

A 3.1 to 5 GHz CMOS Transceiver for DS-UWB Systems

  • Park, Bong-Hyuk;Lee, Kyung-Ai;Hong, Song-Cheol;Choi, Sang-Sung
    • ETRI Journal
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    • v.29 no.4
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    • pp.421-429
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    • 2007
  • This paper presents a direct-conversion CMOS transceiver for fully digital DS-UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase-locked loop (PLL), and a voltage controlled oscillator (VCO). A single-ended-to-differential converter is implemented in the down-conversion mixer and a differential-to-single-ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 $mm^2$ die using standard 0.18 ${\mu}m$ CMOS technology and a 64-pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low-power, and high-speed wireless personal area network.

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5GHz CMOS Quadrature Up-Conversion Mixer

  • Lee, Jang-U;Kim, Sin-Nyeong;Yu, Chang-Sik
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.617-618
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    • 2006
  • A CMOS quadrature Up-converter for a direct-conversion receiver of 5.15-5.825GHz wireless LAN is described. The Up-converter consists of two sub-harmonic mixers, for I and Q channels, and an LO generation network. In order to decrease the number of inductor, I and Q path are merged. The simulation results including all the parasitics show -17.3dB conversion gain at center and -8 dBv oIP3 while consuming 22.968mW under 1.8V supply. The quadrature Up-converter is under fabrication with the other transmitter blocks in a $0.18{\mu}m$ CMOS technology.

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