• Title/Summary/Keyword: Differential output

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Preamplier design for IR receiver IC (적외선 수신모듈IC용 전치증폭기의 설계)

  • Hong, Young-Uk;Ryu, Seung-Tak;Choi, Bae-Gun;Kim, Sang-Kyung;Baik, Sung-Ho;Cho, Gyu-Hyeong
    • Proceedings of the KIEE Conference
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    • 2000.07d
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    • pp.3124-3126
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    • 2000
  • The application of IR(Infrared) communication is very wide and IR receiver has become a standard of home entertainment. A preamplifier with single 5V supply was designed for IR receiver IC. To operate at long distance, receiver IC should have high gain and low noise characteristic. To provide constant output signal magnitude, independent of transciever distance, gain limiting stage is needed. And to cut-off DC noise component effectively, large resistance and capacitance are required. Transimpedance type preamplifier, and diode limiting amplifier, and current limiting amplifier were designed. It is another function of current limiting amplifier that transforms single input signal to differential output signal. Using AMS BiCMOS model, both BJT version and MOS version was designed. Total power consumption is O.lmW, and IC size is $0.3mm^2$

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A 0.13 ${\mu}m$ CMOS UWB RF Transmitter with an On-Chip T/R Switch

  • Kim, Chang-Wan;Duong, Quoc-Hoang;Lee, Seung-Sik;Lee, Sang-Gug
    • ETRI Journal
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    • v.30 no.4
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    • pp.526-534
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    • 2008
  • This paper presents a fully integrated 0.13 ${\mu}m$ CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 ${\mu}m$ CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

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DC Offset Current Compensation Method of Transformeless Fuel Cell/PV PCS (무변압기형 연료전지/태양광용 PCS의 직류분 보상기법)

  • Park, Bong-Hee;Kim, Seung-Min;Choi, Ju-Yeop;Choy, Ick;Lee, Sang-Chul;Lee, Dong-Ha;Lee, Young-Kwon
    • Journal of the Korean Solar Energy Society
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    • v.33 no.6
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    • pp.92-97
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    • 2013
  • This paper proposes DC offset current compensation method of transformerless fuel cell/PV PCS. DC offset current is generated by the unbalanced internal resistance of the switching devices in full bridge topology. The other cause is the sensitivity of the current sensor, which is lower than DSP in resolution. If power converter system has these causes, the AC output current in the inverter will generate the DC offset. In case of transformerless grid-connected inverter system, DC offset current is fatal to grid-side, which results in saturating grid side transformer. Several simulation results show the difficulties of detecting DC offset current. Detecting DC offset current method consists of the differential amplifiers and PWM is compensated by the output of the Op amp circuit with integrator controller. PSIM simulation verifies that the proposed method is simpler and more effective than using low resolution current sensor alone.

CMOS 120 GHz Phase-Locked Loops Based on Two Different VCO Topologies

  • Yoo, Junghwan;Rieh, Jae-Sung
    • Journal of electromagnetic engineering and science
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    • v.17 no.2
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    • pp.98-104
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    • 2017
  • This work describes the development and comparison of two phase-locked loops (PLLs) based on a 65-nm CMOS technology. The PLLs incorporate two different topologies for the output voltage-controlled oscillator (VCO): LC cross-coupled and differential Colpitts. The measured locking ranges of the LC cross-coupled VCO-based phase-locked loop (PLL1) and the Colpitts VCO-based phase-locked loop (PLL2) are 119.84-122.61 GHz and 126.53-129.29 GHz, respectively. Th e output powers of PLL1 and PLL2 are -8.6 dBm and -10.5 dBm with DC power consumptions of 127.3 mW and 142.8 mW, respectively. Th e measured phase noise of PLL1 is -59.2 at 10 kHz offset and -104.5 at 10 MHz offset, and the phase noise of PLL2 is -60.9 dBc/Hz at 10 kHz offset and -104.4 dBc/Hz at 10 MHz offset. The chip sizes are $1,080{\mu}m{\times}760{\mu}m$ (PLL1) and $1,100{\mu}m{\times}800{\mu}m$ (PLL2), including the probing pads.

A 1.5 V High-Cain High-Frequency CMOS Complementary Operational Amplifier

  • Park, Kwangmin
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.4
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    • pp.1-6
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    • 2001
  • In this paper, a 1.5 V high-gain high-frequency CMOS complementary operational amplifier is presented. The input stage of op-amp is designed for supporting the constant transconductance on the Input stage by consisting of the parallel-connected rail-to-rail complementary differential pairs. And consisting of the class-AB rail-to-rail output stage using the concept of elementary shunt stage and the grounded-gate cascode compensation technique for improving the low PSRR which was a disadvantage in the general CMOS complementary input stage, the load dependence of open loop gain and the stability of op- amp on the output load are improved, and the high-gain high-frequency operation can be achieved. The designed op-amp operates perfectly on the complementary mode with the 180° phase conversion for a 1.5 V supply voltage, and shows the DC open loop gain of 84 dB, the phase margin of 65°, and the unity gain frequency of 20 MHz. In addition, the amplifier shows the 0.1 % settling time of .179 ㎲ for the positive step and 0.154 ㎲ for the negative step on the 100 mV small-signal step, respectively, and shows the total power dissipation of 8.93 mW.

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A Double-Hybrid Spread-Spectrum Technique for EMI Mitigation in DC-DC Switching Regulators

  • Dousoky, Gamal M.;Shoyama, Masahito;Ninomiya, Tamotsu
    • Journal of Power Electronics
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    • v.10 no.4
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    • pp.342-350
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    • 2010
  • Randomizing the switching frequency (RSF) to reduce the electromagnetic interference (EMI) of switching power converters is a well-known technique that has been previously discussed. The randomized pulse position (RPP) technique, in which the switching frequency is kept fixed while the pulse position (the delay from the starting of the switching cycle to the turn-on instant within the cycle) is randomized, has been previously addressed in the literature for the same purpose. This paper presents a double-hybrid technique (DHB) for EMI reduction in dc-dc switching regulators. The proposed technique employed both the RSF and the RPP techniques. To effectively spread the conducted-noise frequency spectrum and at the same time attain a satisfactory output voltage quality, two parameters (switching frequency and pulse position) were randomized, and a third parameter (the duty ratio) was controlled by a digital compensator. Implementation was achieved using field programmable gate array (FPGA) technology, which is increasingly being adopted in industrial electronic applications. To evaluate the contribution of the proposed DHB technique, investigations were carried out for each basic PWM, RPP, RSF, and DHB technique. Then a comparison was made of the performances achieved. The experimentally investigated features include the effect of each technique on the common-mode, differential-mode, and total conducted-noise characteristics, and their influence on the converter’s output ripple voltage.

Design of Low-Noise and High-Reliability Differential Paired eFuse OTP Memory (저잡음 · 고신뢰성 Differential Paired eFuse OTP 메모리 설계)

  • Kim, Min-Sung;Jin, Liyan;Hao, Wenchao;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.10
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    • pp.2359-2368
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    • 2013
  • In this paper, an IRD (internal read data) circuit preventing the reentry into the read mode while keeping the read-out DOUT datum at power-up even if noise such as glitches occurs at signal ports such as an input signal port RD (read) when a power IC is on, is proposed. Also, a pulsed WL (word line) driving method is used to prevent a DC current of several tens of micro amperes from flowing into the read transistor of a differential paired eFuse OTP cell. Thus, reliability is secured by preventing non-blown eFuse links from being blown by the EM (electro-migration). Furthermore, a compared output between a programmed datum and a read-out datum is outputted to the PFb (pass fail bar) pin while performing a sensing margin test with a variable pull-up load in consideration of resistance variation of a programmed eFuse in the program-verify-read mode. The layout size of the 8-bit eFuse OTP IP with a $0.18{\mu}m$ process is $189.625{\mu}m{\times}138.850{\mu}m(=0.0263mm^2)$.

A Study of Low-Voltage Low-Power Bipolar Linear Transconductor and Its Application to OTA (저전압 저전력 바이폴라 선형 트랜스컨덕터와 이를 이용한 OTA에 관한 연구)

  • Shin, Hee-Jong;Chung, Won-Sup
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.37 no.1
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    • pp.40-48
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    • 2000
  • 1A novel bipolar linear transconductor and its application to operational transconductance amplifier(OTA) for low-voltage low-power signal processing is proposed. The transconductor consists of a npn differential-pair with emitter degeneration resistor and a pnp differential-pair connected to the npn differential-pair in cascade. The bias current of the pnp differential-pair is used with the output current of the npn differential-pair for wide linearity and temperature stability. The OTA consists of the linear transconductor and a translinear current cell followed by three current mirrors. The proposed transconductor has superior linearity and low-voltage low-power characteristics when compared with the conventional transconductor. The experimental results show that the transconductor with transconductance of 50 ${\mu}S$ has a linearity error of less than ${\pm}$0.06% over an input voltage range from -2V to +2V at supply voltage ${\pm}$3V. Power dissipation of the transconductor was 2.44 mW. A prototype OTA with a transconductance of 25 ${\mu}S$ has been built with bipolar transistor array. The linearity of the OTA was same as the proposed transconductor. The OTA circuit also exhibits a transconductance that is linearly dependent on a bias current varying over four decades with a sensitivity of 0.5 S/A.

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Experimental Design of S box and G function strong with attacks in SEED-type cipher (SEED 형식 암호에서 공격에 강한 S 박스와 G 함수의 실험적 설계)

  • 박창수;송홍복;조경연
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.1
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    • pp.123-136
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    • 2004
  • In this paper, complexity and regularity of polynomial multiplication over $GF({2^n})$ are defined by using Hamming weight of rows and columns of the matrix ever GF(2) which represents polynomial multiplication. It is shown experimentally that in order to construct the block cipher robust against differential cryptanalysis, polynomial multiplication of substitution layer and the permutation layer should have high complexity and high regularity. With result of the experiment, a way of constituting S box and G function is suggested in the block cipher whose structure is similar to SEED, which is KOREA standard of 128-bit block cipher. S box can be formed with a nonlinear function and an affine transform. Nonlinear function must be strong with differential attack and linear attack, and it consists of an inverse number over $GF({2^8})$ which has neither a fixed pout, whose input and output are the same except 0 and 1, nor an opposite fixed number, whose output is one`s complement of the input. Affine transform can be constituted so that the input/output correlation can be the lowest and there can be no fixed point or opposite fixed point. G function undergoes linear transform with 4 S-box outputs using the matrix of 4${\times}$4 over $GF({2^8})$. The components in the matrix of linear transformation have high complexity and high regularity. Furthermore, G function can be constituted so that MDS(Maximum Distance Separable) code can be formed, SAC(Strict Avalanche Criterion) can be met, and there can be no weak input where a fixed point an opposite fixed point, and output can be two`s complement of input. The primitive polynomials of nonlinear function affine transform and linear transformation are different each other. The S box and G function suggested in this paper can be used as a constituent of the block cipher with high security, in that they are strong with differential attack and linear attack with no weak input and they are excellent at diffusion.

Parameter Identification of Nonlinear Dynamic Systems using Frequency Domain Volterra model (비선형 동적 시스템의 파라미터 산정을 위한 주파수 영역 볼테라 모델의 이용)

  • Paik, In-Yeol;Kwon, Jang-Sub
    • Journal of the Earthquake Engineering Society of Korea
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    • v.9 no.3 s.43
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    • pp.33-42
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    • 2005
  • Frequency domain Volterra model is applied to nonlinear parameter identification procedure for dynamic systems modeled by nonlinear function. The frequency domain Volterra kernels, which correspond io linear, quadratic, and cubic transfer functions in lime domain, are incorporated in nonlinear parametric identification procedure. The nonlinear transfer functions, which can be derived from the Volterra series representation of the nonlinear differential equation of the system by Schetzen's method(1980), are directly used for modeling input output relation. The error is defined by the difference between the observed output and the estimated output which is calculated by substituting the observed input to nonlinear frequency domain model. The system parameters are searched by minimizing the error. Volterra model guarantees enough accuracy and convergence and the estimated coefficients have a good agreement with their actual values not only in the linear frequency region but also in the legion where the $2^{nd}\;or\;3^{rd}$ order nonlinearity is dominant.