• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.14 no.2
• /
• pp.122-127
• /
• 2021

This paper produces CdS thin film using ITO glass as substrates. The MDS (Multiplex Deposition Sputter System) was used to produce devices by changing RF power and deposition time. The manufactured specimen was analyzed for its optical properties. The purpose of this paper is to find the fabrication conditions that can be applied to the photo-absorbing layer of solar cells. When RF power was 50W and deposition time was 10 minutes, the thickness was measured at 64Å. At 100W, the thickness was measured at 406Å and at 150 W, the thickness was measured at 889Å. Thin films were found to increase in thickness as RF power increased. As a result of the light transmittance measurement, 550-850nm was observed to have a transmittance of approximately 70% or more when the RF power was 50W, 100W, and 150W. Increasing RF power increased thickness and increased particle size, resulting in increased thin film density, resulting in reduced light transmittance. When RF power was 100W and deposition time was 15 minutes, the band gap was calculated at 3.998eV. When deposition time is 20 minutes, it is 3.987eV, 150W is 3.965eV at 15 minutes, and 3.831eV at 20 minutes. It was measured that the band gap decreased as the RF power increased. At XRD analysis, diffraction peaks at 2Θ=26.44 could be observed regardless of changes in RF power and deposition time. The FWHM was shown to decrease with increasing deposition time. And it was measured that the particle size increased as RF power was constant and deposition time was increased.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.10 no.5
• /
• pp.44-50
• /
• 2011

The effect of deposition time in arc ion plating on surface properties of the TiN-coated SM45C steel is presented in this paper. The surface roughness, micro-particle, micro-hardness, coated thickness, atomic distribution of TiN, and adhesion strength are measured for various deposition times. It has been shown that the deposition time has a considerable effect on the micro-hardness, the coated thickness, and the atomic distribution of TiN of the SM45C steels but that it has little influence on the surface roughness and adhesion strength.

• Journal of Mechanical Science and Technology
• /
• v.20 no.10
• /
• pp.1646-1652
• /
• 2006

A model of mechanical behavior of microcantilever due to intrinsic strain during deposition of MEMS structures is derived. A linear ordinary differential equation is derived for the beam deflection as a function of the thickness of the deposited layer. Closed-form solutions are not possible, but numerical solutions are plotted for various dimensionless ratios of the beam stiffness, the intrinsic strain, and the elastic moduli of the substrate and deposited layer. This model predicts the deflection of the cantilever as a function of the deposited layer thickness and the residual stress distribution during deposition. The usefulness of these equations is that they are indicative of the real time behavior of the structures, i.e. it predicts the deflection of the beam continuously during deposition process.

• Applied Microscopy
• /
• v.45 no.3
• /
• pp.119-125
• /
• 2015

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted significant attention due to their unique and exotic properties attributed to their low dimensionality. In particular, semiconducting 2D TMDCs such as $MoS_2$, $WS_2$, $MoSe_2$, and $WSe_2$ have been demonstrated to be feasible for various advanced electronic and optical applications. In these regards, process to synthesize high quality 2D TMDCs layers with high reliability, wafer-scale uniformity, controllable layer number and excellent electronic properties is essential in order to use 2D TMDCs in practical applications. Vapor deposition techniques, such as physical vapor deposition, chemical vapor deposition and atomic layer deposition, could be promising processes to produce high quality 2D TMDCs due to high purity, thickness controllability and thickness uniformity. In this article, we briefly review recent research trend on vapor deposition techniques to synthesize 2D TMDCs.

• Electrical & Electronic Materials
• /
• v.7 no.6
• /
• pp.511-519
• /
• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Journal of the Korean Society for Precision Engineering
• /
• v.26 no.10
• /
• pp.74-80
• /
• 2009

This paper presents a study on fluid flow analysis of organic semiconductor thin film deposition process using the computational numerical method. In the production process, the thickness of deposited organic thin film depends on distribution of nozzle size in the linear cell system, so we analyze to decide the optimal nozzle system for uniform thickness of organic thin film. The results of deposited thickness of thin film by numerical analysis are in good agreement with those of the experimental measurements.

• Journal of the Korean Society for Heat Treatment
• /
• v.5 no.1
• /
• pp.1-12
• /
• 1992

In order to improve adhesive force of TiN film, we sputtered titanium as interlayer before TiN deposition by Plasma Enhanced Chemical Vapour Deposition. We observed changes of hardness and adhesion at a various thickness of titanium interlayer and also examined analysis. At the critical thickness of the titanium interlayer(about $0.2{\mu}$), adhesive force of TiN films were promoted mostly. But over the critical thickness, a marked reduction of adhesive force was showed, because of the internal stress of titanium interlayer. From AES analysis, the adhesion improvement of TiN films was mainly caused by nitrogen diffusion into titanium interlayer during TiN deposition process which relieved stress concentration at TiN coating-substrate interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.05a
• /
• pp.103-107
• /
• 1994

An experimental study was carried out to investigate the fabrication process and electrical breakdown of electrodeposted polyimide film from nonaqueous emulsion onto metal electrode surface. The thickness of imide film control led by the deposition voltage and time are proportional to the voltage or time. From the results, yeilds is proportional to the total elctrical charge flow through the electrode. When electrophoretic deposition voltage is 30 [V] deposition time is 30 sec, 40 sec, 50 sec, then the thickness of the films are 2.13 $\mu\textrm{m}$, 2.69 $\mu\textrm{m}$, 3.16 $\mu\textrm{m}$, 3.94 $\mu\textrm{m}$, respectively Electrical breakdown voltage of polyimide thin film shows very high. As film thicknes increase, the breakdown voltage are increased, but are net directly proprotional to thickness of the film.

• Progress in Superconductivity
• /
• v.5 no.1
• /
• pp.75-79
• /
• 2003

YBCO films were deposited with various thicknesses from 100nm to 1.6$\mu\textrm{m}$ on single crystal $SrTiO_3$ substrates by pulsed laser deposition (PLD). The effects of different deposition conditions, especially different deposition rates by means of changing the pulsed laser frequency up to 200Hz, on the J$_{c}$ value were studied. For YBCO film with the thickness of 200nm, the $J_{c}$ value of $2.1MA/\textrm{cm}^2$ has been achieved under the high deposition rate of 3.2nm/s (190nm/min). The $J_{c}$ can be maintained greater than $1M/\textrm{cm}^2$ with the thickness less than 1$\mu\textrm{m}$. The X-ray analysis was used to examine the texture, crystallization and surface quality. The SEM was employed to analyze the surface of YBCO, and it was shown the surface of YBCO film became rougher with increasing the thickness. There were many large singular outgrowths and networks of outgrowths on the surface of YBCO films which lowered the density of thick YBCO film. The outgrowth network was probably the a-axis YBCO corresponding to XRD $\theta$-2$\theta$scan and $\chi$-scan which were used to characterize a-axis orientation of YBCO film. The reason for J$_{c}$ declining with increasing the thickness was studied and discussed.sed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.186-187
• /
• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. Thickness of SBN thin films was about 250[nm] in 70/30 of $Ar/O_2$ ratio. The thickness and deposition rate of SBN thin films were increased with increase of RF power. The capacitance of SBN thin films were increased with the increase of deposition temperature.