• Journal of Biomedical Engineering Research
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• v.31 no.5
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• pp.395-400
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• 2010

Hypertension is the chronic disease that the 16% of total population are suffering, and it needs to be studied to find alternative treatment because of the tolerance and side effect of medications that may bother some patients. in this paper, we verified practicality of implantable electrical stimulator that can readily change stimulus magnitude and frequency. And this device is possible to stimulate baroreflex or parasympathetic nerve. Therefore we performed in vitro tests and animal experiment for device's operating conditions. This device consist of implantable electrical stimulator and extracorporeal control/monitoring system. Stimulator was designed to make 1Hz~100Hz pulses and it can change continuous or periodic pulse train type. And this device can control stimulator's function and monitor stimulator's status and patients' blood pressure at exterior of body using ZigBee module as wireless telecommunication. We verified that stimulator have error rate under 5% at 50mm depth of organs and, stimulator makes high-efficiency energy with closer position of two electrodes. Also we can confirm the performance of device that decreasing blood pressure and heart rate of a rat by electrical stimulation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.889-893
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• 2015

In this work, the characteristics of GIDL current in nanowire GAA MOSFET with different channel width and hot carrier stress. When the gate length is fixed as a 250nm the GIDL current with different channel width of 10nm, 50nm, 80nm, and 130nm have been measured and analyzed. From the measurement, the GIDL is increased as the channel width decreaes. However, the derive current is increased as the channel width increases. From measurement results after hot carrier stress, the variation of GIDL current is increased with decreasing channel width. Finally, the reasons for the increase of GIDL current with decreasing channel width and r device. according to hot carrier stress GIDL's variation shows big change when width and the increase of GIDL current after hot carrier stress are confirmed through the device simulation.

• Progress in Medical Physics
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• v.15 no.4
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• pp.179-185
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• 2004

To deal with tumor motion from respiration is one of the important issues for the advanced treatment techniques, such as the intensity modulated radiation therapy (IMRT), the image guided radiation therapy (IGRT), the three dimensional conformal therapy (3D-CRT) and the Cyber Knife. Studies including the active breath control (ABC) and the gated radiation therapy have been reported. Authors have developed the device for reducing the respiration effects and the diaphragm motions with this device were observed to determined the effectiveness of the device. The device consists of four belts to immobilize diaphragm motion and the vacuum cushion. Diaphragm motions without and with device were monitored fluoroscopically. Diaphragm motion ranges were found to be 1.14 ～ 3.14 cm (average 2.14 cm) without the device and 0.72～1.95 cm (average 1.16 cm) with the device. The motion ranges were decreased 20 ～ 68.4% (average 44.9%.) However, the respiration cycle was increased from 4.4 seconds to 3.7 seconds. The CTV-PTV margin could be decreased significantly with the device developed in this study, which may be applied to the treatments of the tumor sited diaphragm region.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.494-497
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• 2002

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model(QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll-off characteristics for threshold voltage of MOSFET with decreasing channel length, we know u value must be nearly 1 in the generalized scaling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.213-217
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• 2015

Device model parameters are very important for accurate estimation of electrical performances in devices, integrated circuits and their systems. There are a large number of methods for extraction of model parameters in power MOSFETs. For high efficiency, design is important considerations of a power MOSFET with high-voltage applications in consumer electronics. Meanwhile, it was proposed that the efficiency of a MOSFET can be enhanced by conducting JFET region double implant to reduce the On-resistance of the transistor. This paper reports the effects of JFET region double implant on the electrical properties and the decreasing On-resistance of the MOSFET. Experimental results show that the 1st JFET region implant diffuse can enhance the On-resistance by decreasing the ion concentration due to the surface and reduce the On-resistance by implanting the 2nd Phosphorus to the surface JFET region.

• Nuclear Engineering and Technology
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• v.53 no.2
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• pp.618-625
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• 2021

In this paper, the single-photon avalanche diodes (SPADs) featuring three different p-well implantation doses (∅_p-well) of 5.0 × 10¹², 4.0 × 10¹², and 3.0 × 10¹² atoms/cm² under the identical device layouts were fabricated and characterized to evaluate the effects of field enhanced mechanisms on primary dark pulses due to the maximum electric field. From the I-V curves, the breakdown voltages were found as 23.2 V, 40.5 V, and 63.1 V with decreasing ∅_p-well, respectively. By measuring DCRs as a function of temperature, we found a reduction of approximately 8% in the maximum electric field lead to a nearly 72% decrease in the DCR at V_ex = 5 V and T = 25 ℃. Also, the activation energy increased from 0.43 eV to 0.50 eV, as decreasing the maximum electric field. Finally, we discuss the importance of electric field engineering in reducing the field-enhanced mechanisms contributing to the DCR in SPADs and the benefits on the SPADs related to different types of radiation detection applications.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.47-50
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• 2021

Nanoimprint lithography (NIL) has revolutionized the fabrications of electronics, photonics, optical and biological devices. Among all the NIL processes, roll-to-roll nanoimprinting is regarded best for having the attributes of low cost, continuous, simple, and energy-efficient process for nanoscale device fabrication. However, large-area printing is limited by the master mold deformation. In this study, a finite element model (FEM) has been constructed to assess the deformation of the roll mold adhesively wrapped on the carbon fiber reinforced material (CFRP) base roll. This study also optimizes the deformations in the metallic roll mold with respect to nip-forces applied in the printing process of nano-fabrication on large scale. The numerical simulations were also conducted to evaluate the deflection in roll mold assembly due to gravity. The results have shown decreasing trend of the deformation with decreasing nip-force. Also, pressure uniformity of about 40% has been optimized by using the current numerical model along with an acceptable deflection value in the vertical axis due to gravity.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.12 no.1
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• pp.66-74
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• 2013

This paper introduces the improvement of QoS to compensate the decreasing LED performance by temperature characteristic in the LED-ID communication system. LED does not only use as a lighting device, but also uses as a communication device. The conventional system is transmitted by RGB of LED following the mixture color ratio, which determined the color of lighting, and the BER performance of each RGB signals. However, when the LED used consistently, it has occurred the heat temperature. As a result, LED is degraded the performance by increased temperature each device. To solve this problem, we proposed the adaptive modulation and coding scheme by temperature of device to improve the performance of system and satisfied the QoS in the LED-ID system.

• Proceedings of the Korean Institute Of Construction Engineering and Management
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• 2008.11a
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• pp.918-921
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• 2008

There are various accident at the Construction site like fall, electric shock, roll over, clash, fire, body cutting. By the way, falls are the most causes accidents. So, the best way of decreasing Construction accidents is decreasing falls. Already, there are many studies about falls accidents, but those studies were pointed out unrealistic because falls accidents are increasing. For that reason, this study look for more concrete device. In this study, grasp the cause of falls accident from 2007 to 2008. 06. 30. And then, stand on this factor I set my face to look for the causes of falls accident. This access means will drive to remove core causes, and then that means will decrease the falls accidents. Moreover that means will contribute decreasing the hole construction accidents.