• Transactions on Electrical and Electronic Materials
• /
• v.16 no.5
• /
• pp.280-284
• /
• 2015

Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O₂+N₂ gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.2
• /
• pp.119-124
• /
• 2017

Due to the high saturation magnetization (~2.4 T), $Fe_{16}N_2$ is interesting for the thin film application such as an actuator, data record storage and sensor etc. In this study, Fe-N thin films were deposited on Si(001) substrate with various power and deposition time by DC magnetron sputtering, in order to get high portion of $Fe_{16}N_2$ phase. Surface morphology, phase formation and magnetic properties were measured. As a result, Saturation magnetization and Remanence magnetization reach to ~2.45 T and 1.41T. But, Coercivity was not enough in this experiments. Its value lower than 100 Oe. Which is very close to theoretical value.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.2
• /
• pp.43-49
• /
• 2015

This study reports a fabrication of $TiO_2$ on the surface of dental implants by pulsed d.c. magnetron sputtering from a Ti target. A systematic investigation on the microstructure and mechanical properties of $TiO_2$ films was carried out with the variation of $O_2$ contents and substrate temperatures. The effects of deposition parameters on the fabricated structures were investigated by X-ray diffraction (XRD) technique and field emission scanning electron microscope (FE-SEM). Hydrophilic properties were evaluated by measuring water contact angles on the film surface. With increasing $O_2$ contents up to 40%, surface roughness of $TiO_2$ film increased while relatively smooth surface was obtained with 50% $O_2$ contents. Surface roughness and adhesion strength both increased as substrate temperature increased up to $200^{\circ}C$. From these results, hydrophilic and adhesive properties of the present $TiO_2$ films synthesized with 40% $O_2$ at $200^{\circ}C$ are regarded to be suitable for bio-compatible applications.

• Applied Microscopy
• /
• v.29 no.3
• /
• pp.265-274
• /
• 1999

The microstructure of Cu thin films in various deposition conditions was characterized. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide films by DC magnetron sputtering. The Ar pressure during Cu deposition was controlled to 5, 50 and 100 mtorr. The microstructure was characterized using conventional and high resolution SEM and TEM. As sputtering pressure increases, open boundaries are observed more frequently. The Cu film deposited at 5 mtorr has a dense and uniform structure, while low-density regions or open boundaries between columns exist in the film deposited at higher pressure. As the film grows thicker, open boundaries are wider and the density of open boundaries are higher. The comparison between SEM and TEM show that the small features shown in high resolution SEM are grains. High resolution SEM is very effective to characterize the microstructure of the thin films. One column in the films deposited at 50 and 100 mtorr consists of several grains, which are smaller than those deposited at 5 mtorr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.7
• /
• pp.414-423
• /
• 2016

In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.

• Journal of the Korean Magnetics Society
• /
• v.8 no.5
• /
• pp.282-287
• /
• 1998

Dependence of magnetoresistance on base pressure and deposition rates of each Fe, Co, Cu layers in the $Fe(50{\AA}/[Co(17{\AA})/Cu(24{\AA})]_20$ multilayer thin films, prepared by dc magnetron sputtering on Corning glass, were investigated. AFM analysis, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresustance measurement (4-probe method) were performed. The multilayer films deposited under low base pressure increases magnetoresistance ratio by preventing oxidation. Annealing for the samples at a moderate temperature allowed larger textured grain with no loss in the periodicity. Magnetoresistance ratio of the annealed multilayers was increased due to the increase antiferromagnetically coupled fraction of the film after annealing. Optimization of deposition rate was greater than 1 $\AA$/s for Fe, and 2.8 $\AA$/s for Cu. Deposition rate of Co showed a tendency of increasing of magnetoresistance ratio due to the formation of flat magnetic layer in case of high deposition rate of Co.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.276-276
• /
• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• Journal of the Korean institute of surface engineering
• /
• v.40 no.4
• /
• pp.165-169
• /
• 2007

Compared to conventional Indium Tin Oxide (ITO) film deposition methods, cesium (Cs) assisted sputtering offers higher film characteristics in terms of electrical, mechanical and optical properties. However, it showed highly non-linear characteristics between process input factors and equipment responses. Therefore, to maximize film quality, optimization of manufacturing process is essential and process characterization is the first step for process optimization. For this, we designed 2 level design of experiment (DOE) to analyze ITO film characteristics including film thickness, resistivity and transmittance. DC power, pressure, carrier flow, Cs temperature and substrate temperature were selected for process input variables. Through statistical effect analysis methods, relation between three types of ITO film characteristics and five kinds of process inputs are successfully characterized and eventually, it can be used to optimize Cs assisted sputtering processes for various types of film deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05b
• /
• pp.58-61
• /
• 2003

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24\;{\Omega}$/square and $1.5{\times}10^{-3}\;cm$, respectively.

• Journal of the Korean Ceramic Society
• /
• v.49 no.6
• /
• pp.556-560
• /
• 2012

Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.