Fabrication of the Hihg Power SiGe Heterojunction Bipolar Transistors using APCVD (상압 화학 기상 증착기를 이용한 고출력 SiGe HBT제작)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 1996.11a
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- pp.26-28
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- 1996