[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.46670/JSST.2021.30.6.436

Gate length scaling behavior and improved frequency characteristics of In_0.8Ga_0.2As high-electron-mobility transistor, a core device for sensor and communication applications

Jo, Hyeon-Bhin (School of Electronic and Electrical Engineering, Kyungpook National University)
Kim, Dae-Hyun (School of Electronic and Electrical Engineering, Kyungpook National University)

Publication Information

Journal of Sensor Science and Technology / v.30, no.6, 2021 , pp. 436-440 More about this Journal

Abstract

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

Keywords

$In_{0.8}Ga_{0.2}As$ ; HEMT; Current-gain cutoff frequency; Maximum oscillation frequency; Sub-MMW; Image sensor;

Citations & Related Records

Reference

1	A. Tessmann, A. Leuther, S. Wagner, H. Massler, M. Kuri, H. -P. Stulz, M. Zink, M. Riessle, and T. Merkle, "A 300 GHz low-noise amplifier S-MMIC for use in next-generation imaging and communication applications", Proc. IEEE MTT-S Int. Microw. Symp., pp. 760-763, Honololu, Hi, USA, 2017.
2	A. Leuther, S. Koch, A. Tessmann, I. Kallfass, T. Merkle, H. Massler, R. Loesch, M. Schlechtweg, S. Saito, and O. Ambacher, "20 nm metamorphic HEMT with 660 GHz fT," IPRM 2011 - 23rd Inter. Conf. on Indium Phosphide Relat. Mater., pp. 1-4, Berlin, 2011.
3	X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, P.-H. Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W.-R. Deal, "First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process," in IEEE Electron Device Lett., Vol. 36, No. 4, pp. 327-329, 2015. DOI
4	H. B. Jo, D. Y. Yun, J. M. Baek, J. H. Lee, T. W. Kim, D. H. Kim, T. Tsutsumi, H. Sugiyama, and H. Matsuzaki, "L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz", 2019 Appl. Phys. Express, Vol. 12, pp. 054006(1)-054006(4), 2019.
5	T. Takahashi, M. Sato, K. Makiyama, T. Hirose, and N. Hara, "InAlAs/InGaAs HEMTs with minimum noise figure of 1.0 dB at 94 GHz", Proc. IEEE 19th Int. Conf. IPRM, pp. 55-58, Matsue, Japan, 2007.
6	J. M. Hornibrook, J. I. Colless, I. D. C. Lamb, S. J. Pauka, H. Lu, A. C. Gossard, J. D. Watson, G. C. Gardner, S. Fallahi, M. J. Manfra, and D. J. Reilly, "Cryogenic control architecture for large-scale quantum computing", Phys. Rev. Appl., Vol. 3, pp. 024010(1)-024010(9), 2015. DOI
7	K. M. H. Leong, X. Mei, W. H. Yoshida, A. Zamora, J. G. Padilla, B. S. Gorospe, K. Nguyen, and W. R. Deal, "850 GHz receiver and transmitter front-end using InP HEMT", IEEE Trans. THz Sci. Technol., Vol. 7, No. 4, pp. 466-475, 2017. DOI
8	E. Y. Chang, C. I. Kuo, H. T. Hsu, C. Y. Chiang, and Y. Miyamoto, "InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications", 2013 Appl. Phys. Express, Vol. 6, pp. 034001(1)-034001(3), 2013.
9	W. R. Deal, K. Leong, A. Zamora, B. Gorospe, K. Nguyen, and X. B. Mei, "A 660 GHz up-converter for THz communications", Proc. IEEE Compd Semicond. Integr. Circuit Symp. (CSICS), pp. 1-4, Miami, FL, USA, 2017.
10	H. Sugiyama, H. Matsuzaki, H. Yokoyama, and T. Enoki, "High-electron-mobility In_0.53Ga_0.47As/In_0.8Ga_0.2As composite-channel modulation-doped structures grown by metalorganic vapor-phase epitaxy", 2010 22nd Inter. Conf. on Indium Phosphide Relat. Mater., pp. 1-4, Kagawa, 2010.