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Analysis of PHEMT's Characteristics by Gate Recesses  

임병옥 (동국대학교 밀리미터파신기술연구센터)
이성대 (동국대학교 밀리미터파신기술연구센터)
김성찬 (동국대학교 밀리미터파신기술연구센터)
설우석 (동국대학교 밀리미터파신기술연구센터)
신동훈 (동국대학교 밀리미터파신기술연구센터)
이진구 (동국대학교 밀리미터파신기술연구센터)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.9, 2003 , pp. 644-650 More about this Journal
Abstract
In this paper, we have studied characteristics of PHEMT's fabricated by two difference types of gate recess for improving performance of the device in millimeter wave applications. PHEMT's were fabricated using wide and narrow recesses. Maximum transconductance(g$_{m}$) of PHEMT's using the wide recess was 332.7 mS/mm, and that of PHEMT's using narrow recess was 504.6 mS/mm. From small signal performance measurements, cutoff frequency(f$_{T}$) and maximum stable oscillation frequency(f$_{max}$) of PHEMT's using wide recess were 113 GHz and 172 GHz, respectively. f$_{T}$ and f$_{max}$ of PHEMT using narrow recess were 101 GHz and 142 GHz, respectively. The measured data of the fabricated PHEMTs' were carefully studied and analyzed.d.tudied and analyzed.
Keywords
PHEMT; gate; wide recess; narrow recess; small signal model;
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Times Cited By KSCI : 2  (Citation Analysis)
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