• Journal of Welding and Joining
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• 제32권3호
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• pp.19-26
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• 2014

Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

• Nuclear Engineering and Technology
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• 제48권4호
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• pp.906-914
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• 2016

We investigated the heat load imposed on the lower head of a reactor vessel by the natural convection of the oxide pool in a severe accident. Mass transfer experiments using a $CuSO_4-H_2SO_4$ electroplating system were performed based on the analogy between heat and mass transfer. The $Ra^{\prime}_H$ of $10^{14}$ order was achieved with a facility height of only 0.1 m. Three different volumetric heat sources were compared; two had identical configurations to those previously reported, and the other was designed by the authors. The measured Nu's of the lower head were about 30% lower than those previously reported. The measured angular heat flux ratios were similar to those reported in existing studies except for the peaks appearing near the top. The volumetric heat sources did not affect the Nu of the lower head but affected the Nu of the top plate by obstructing the rising flow from the bottom.

• 한국표면공학회지
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• 제16권3호
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• pp.98-107
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• 1983

A study on the improvement of wear resistance of brasses by electroplating and diffusion treatment of tin was carried out. The optimum condition of the treatment obtained was as follows. Plating thickness of tin : 5 - 9 $\mu\textrm{m}$ Condition of diffusion treatment : atmosphere ; fused nitrate bath (KNO3 + NaNO3) temperature and time ; 1st step 320$^{\circ}C$, 60min. and 450$^{\circ}C$, 30min. During the diffusion treatment, internetallic compounds of Cu-Sn were formed and these compounds were identified as η, $\varepsilon$ and $\delta$ phase from the outer tin layer. It was considered that the improvement of wear resistance of brasses by the treatment is because of the formation of intemetallic compounds particalarly $\varepsilon$phase which is very hard, between soft tin layer brass.

• Journal of Electrochemical Science and Technology
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• 제7권2호
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• pp.132-138
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• 2016

In this study, we report the fabrication of functional complex fibers, which have been studied widely globally for numerous applications. Here, we fabricated conductive complex fibers with antibacterial properties by coating metal ions on the surface of plastic (polypropylene) fibers using the electroless and electrochemical deposition. First, we polished the polypropylene melt-blown fiber surface and obtained an absorbing Pd seed layer on its surface. Subsequently, we substituted the Pd with Cu. Bis-3-sulfopropyl-disulfide disodium salt (SPS), polyethylene glycol (PEG), and ethylene thiourea (ETU) were used as the brightener, carrier, and leveler, respectively for the electroplating. We focused on most achieving the stable plating condition to remove dendrites, which are normally during electroplating metals so that smooth layer is formed on the fiber surface. The higher the amount of SPS, the higher was the extent of irregular plate-like growth. Many irregularities in the form of round spheres were observed with increase in the amount of PEG and ETU. Hence, when the additives were used separately, a uniform coating could not be obtained. A stable coating was obtained when the three additives were combined and a uniform 5-9 μm thick copper layer with a stable morphology could be obtained around the fiber. We believe that our results can be applied widely to obtain conductive fibers with antibacterial properties and are useful in aiding research on conductive lightweight composite fibers for application in information technology and robotics.

• 에너지공학
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• 제24권1호
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• pp.78-87
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• 2015

중대사고시 금속용융물층의 열속 집중 현상(Focusig effect)에 대해 상부와 측면벽의 냉각 조건과 높이를 변화시키면서 실험과 수치해석을 수행하였다. 상사성(Analogy) 원리를 이용해 열전달 실험 대신 물질전달 실험을 수행하였으며 황산-황산구리 수용액의 전기도금계를 물질전달계로 채택하였다. $Ra_H$ 수 $8.49{\times}10^7{\sim}5.43{\times}10^9$ 범위에서 상부와 측면벽의 냉각 조건을 세 가지로, 높이를 네 가지로 변화시키면서 열전달을 측정하였다. 상부만 냉각인 경우의 실험결과를 동일한 조건인 Rayleigh-Benard 자연대류 상관식과 비교한 바 Dropkin과 Somerscales, Globe와 Dropkin의 상관식과 매우 일치하였다. 측면벽만 냉각인 경우, 상부와 측면벽 모두 냉각인 경우, 상부만 냉각인 경우 순으로 열전달이 감소하였고, 냉각 조건을 고정한 상태에서 높이를 감소시킬수록 측면 열전달이 향상되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 한국산학기술학회논문지
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• 제18권7호
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• pp.17-25
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• 2017

최근에 LED나 OLED와 같은 조명용 소자의 온도 상승에 따른 문제점을 개선하기 위하여 전기 도금 방법을 사용하여 제작한 두께가 두꺼운 금속 필름을 heat sink로 사용하고 있다. Cu 필름과 같은 두꺼운 금속 필름은 습식 방법인 전기 도금으로 제작하여 주로 소자의 방열판으로 사용되어 왔으나 건식의 증착 방법을 이용한 수 백 ${\mu}m$의 Cu 금속 필름에 대한 필요성이 요구되고 있다. 본 연구에서 설계 제작된 유도 가열 방식의 Cu 필름 증착 장비는 가열부가 세라믹 도가니 히터 부분과 세라믹 도가니 부분으로 분리된 이중 구조의 heating 방식을 채택하여 열 손실을 최소화 하고 보온 효과를 극대화시켰다. 또한 유도 가열 방식으로 초고속의 필름 증착 속도를 구현하였다. 그리고 열전도도가 높고 안정적인 두꺼운 Cu 필름 증착기술을 확보하고 최적화 하여 $1000{\AA}/s$의 증착율로 $100{\mu}m$의 필름을 증착 하였으며 ~2.0% 이내의 두께 균일도를 얻었다.

• 전기학회논문지
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• 제67권3호
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• pp.413-418
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• 2018

In this paper, we describe the development of a non-enzymatic glucose sensor based on copper nanocubes(Cu NCs) electroplated laser induced graphene(LIG) electrodes which can detect a certain range of glucose concentrations. $CO_2$ laser equipment was used to form LIG electrodes on the PI film. This fabrication method allows easy control of the LIG electrode size and shape. The Cu NCs were electrochemically deposited on the LIG electrodes to improve electron transfer rates and thus enhancing electrocatalytic reaction with glucose. The average sheet resistances before and after electroplating were $15.6{\Omega}/{\Box}$ and $19.6{\Omega}/{\Box}$, respectively, which confirmed that copper nanocubes were formed on the laser induced graphene electrodes. The prepared electrode was used to measure the current according to glucose concentration using an electrochemical method. The LIG electrodes with Cu NCs demonstrated a high degree of sensitivity ($1643.31{\mu}A/mM{\cdot}cm^2$), good stability with a linear response to glucose ranging from 0.05 mM to 1 mM concentration, and a limit of detection of 0.05 mM. In order to verify that these electrodes can be used as flexible devices, the electrodes were bent to $30^{\circ}$, $90^{\circ}$, and $180^{\circ}$ and cyclic voltammetry measurements were taken while the electrodes were bent. The measured data showed that the peak voltage was almost constant at 0.42 V and the signal was stable even in the flexed condition. Therefore, it is concluded that these electrodes can be used in flexible sensors for detecting glucose in the physiological sample like saliva, tear or sweat.

• 청정기술
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• 제17권2호
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• pp.103-109
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• 2011

전기도금의 seed layer를 형성하는 무전해 동도금 공정의 throwing power (TP)와 두께 편차를 개선하기 위한 공정 최적화 방법을 제시하였다. 실험계획법 (DOE)을 이용하여 가능한 모든 공정 인자들 가운데 TP와 두께 편차에 가장 큰 영향을 미치는 주요 인자를 파악해 보았다. 균일성을 가진 via filling을 위해서는 도금액 내의 Cu 이온의 농도를 높여주고 도금 온도를 낮추어 주는 것이 바람직한 것으로 판단되었으며 이는 표면 반응성의 측면에서 설명되었다. Kinetic Monte Carlo (MC) 모사가 이를 시각화하기 위해 도입되었으며 실험에서 관찰된 현상을 정성적으로 무리 없이 설명할 수 있었다. 실험계획법을 이용한 체계적인 실험과 이를 뒷받침하는 이론적인 모사가 결합된 본 연구의 접근법은 관련 공정에서 유용하게 활용될 수 있을 것이다.

• 한국재료학회지
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• 제17권10호
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.