• Journal of Welding and Joining
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• v.32 no.3
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• pp.19-26
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• 2014

Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

• Nuclear Engineering and Technology
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• v.48 no.4
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• pp.906-914
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• 2016

We investigated the heat load imposed on the lower head of a reactor vessel by the natural convection of the oxide pool in a severe accident. Mass transfer experiments using a $CuSO_4-H_2SO_4$ electroplating system were performed based on the analogy between heat and mass transfer. The $Ra^{\prime}_H$ of $10^{14}$ order was achieved with a facility height of only 0.1 m. Three different volumetric heat sources were compared; two had identical configurations to those previously reported, and the other was designed by the authors. The measured Nu's of the lower head were about 30% lower than those previously reported. The measured angular heat flux ratios were similar to those reported in existing studies except for the peaks appearing near the top. The volumetric heat sources did not affect the Nu of the lower head but affected the Nu of the top plate by obstructing the rising flow from the bottom.

• Journal of the Korean institute of surface engineering
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• v.16 no.3
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• pp.98-107
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• 1983

A study on the improvement of wear resistance of brasses by electroplating and diffusion treatment of tin was carried out. The optimum condition of the treatment obtained was as follows. Plating thickness of tin : 5 - 9 $\mu\textrm{m}$ Condition of diffusion treatment : atmosphere ; fused nitrate bath (KNO3 + NaNO3) temperature and time ; 1st step 320$^{\circ}C$, 60min. and 450$^{\circ}C$, 30min. During the diffusion treatment, internetallic compounds of Cu-Sn were formed and these compounds were identified as η, $\varepsilon$ and $\delta$ phase from the outer tin layer. It was considered that the improvement of wear resistance of brasses by the treatment is because of the formation of intemetallic compounds particalarly $\varepsilon$phase which is very hard, between soft tin layer brass.

• Journal of Electrochemical Science and Technology
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• v.7 no.2
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• pp.132-138
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• 2016

In this study, we report the fabrication of functional complex fibers, which have been studied widely globally for numerous applications. Here, we fabricated conductive complex fibers with antibacterial properties by coating metal ions on the surface of plastic (polypropylene) fibers using the electroless and electrochemical deposition. First, we polished the polypropylene melt-blown fiber surface and obtained an absorbing Pd seed layer on its surface. Subsequently, we substituted the Pd with Cu. Bis-3-sulfopropyl-disulfide disodium salt (SPS), polyethylene glycol (PEG), and ethylene thiourea (ETU) were used as the brightener, carrier, and leveler, respectively for the electroplating. We focused on most achieving the stable plating condition to remove dendrites, which are normally during electroplating metals so that smooth layer is formed on the fiber surface. The higher the amount of SPS, the higher was the extent of irregular plate-like growth. Many irregularities in the form of round spheres were observed with increase in the amount of PEG and ETU. Hence, when the additives were used separately, a uniform coating could not be obtained. A stable coating was obtained when the three additives were combined and a uniform 5-9 μm thick copper layer with a stable morphology could be obtained around the fiber. We believe that our results can be applied widely to obtain conductive fibers with antibacterial properties and are useful in aiding research on conductive lightweight composite fibers for application in information technology and robotics.

• Journal of Energy Engineering
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• v.24 no.1
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• pp.78-87
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• 2015

Focusing effect of a metallic layer in a severe accident depending on the aspect ratios and cooling conditions of top plate and side wall was investigated. Experiments were carried out for Rayleigh numbers and aspect ratio in the range of $8.49{\times}10^7{\sim}5.43{\times}10^9$, 0.135~0.541 respectively. In order to achieve high Rayleigh numbers, the heat transfer experiments were replaced by mass transfer experiments based on the heat and mass transfer analogy. A sulfuric acid-copper sulfate ($H_2SO4-CuSO_4$) electroplating system was adopted as the mass transfer system. The experimental results agreed well with the Rayleigh-Benard natural convection correlations of Dropkin and Somerscales and Globe and Dropkin. When compared with the standard Rayleigh-Benard problem, the cooling by the side wall is even higher than the top. For a shorter height, the interaction between the heated and cooled plumes increases due to decrease of the height. Thus, the heat transfer increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.7
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• pp.17-25
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• 2017

To resolve the problem of the temperature rise in LED or OLED lighting, until now a thick metal film has been used as a heat-sink. Conventionally, this thick metal film is made by the electroplating method and used as the heat-dissipating plate of the electronic devices. However, nowadays there is increasing need for a Cu metal film with a thickness of several hundred micrometers that can be formed by the dry deposition method. In this work, we designed and fabricated a Cu film deposition system where the heating element is separated from the ceramic crucible, which makes ultra-rapid deposition possible by preventing heat loss. In addition, the resulting induction heating also contributes to the high deposition rate. By tuning the various parameters, we obtained a $100-{\mu}m$ thick Cu film whose heat conductivity is high and whose thickness uniformity is better than 2%, while the deposition rate is as high as $1000{\AA}/s$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.3
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• pp.413-418
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• 2018

In this paper, we describe the development of a non-enzymatic glucose sensor based on copper nanocubes(Cu NCs) electroplated laser induced graphene(LIG) electrodes which can detect a certain range of glucose concentrations. $CO_2$ laser equipment was used to form LIG electrodes on the PI film. This fabrication method allows easy control of the LIG electrode size and shape. The Cu NCs were electrochemically deposited on the LIG electrodes to improve electron transfer rates and thus enhancing electrocatalytic reaction with glucose. The average sheet resistances before and after electroplating were $15.6{\Omega}/{\Box}$ and $19.6{\Omega}/{\Box}$, respectively, which confirmed that copper nanocubes were formed on the laser induced graphene electrodes. The prepared electrode was used to measure the current according to glucose concentration using an electrochemical method. The LIG electrodes with Cu NCs demonstrated a high degree of sensitivity ($1643.31{\mu}A/mM{\cdot}cm^2$), good stability with a linear response to glucose ranging from 0.05 mM to 1 mM concentration, and a limit of detection of 0.05 mM. In order to verify that these electrodes can be used as flexible devices, the electrodes were bent to $30^{\circ}$, $90^{\circ}$, and $180^{\circ}$ and cyclic voltammetry measurements were taken while the electrodes were bent. The measured data showed that the peak voltage was almost constant at 0.42 V and the signal was stable even in the flexed condition. Therefore, it is concluded that these electrodes can be used in flexible sensors for detecting glucose in the physiological sample like saliva, tear or sweat.

• Clean Technology
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• v.17 no.2
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• pp.103-109
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• 2011

The process optimization was carried out to improve the throwing power (TP) and the thickness uniformity of the electroless copper (Cu) plating, which plays a seed layer for the subsequent electroplating. The DOE (design of experiment) was employed to screen key factors out of all available operation parameters to influence the TP and thickness uniformity the most. It turned out that higher Cu ion concentration and lower plating temperature are advantageous to accomplish uniform via filling and they are accounted for based on the surface reactivity. To visualize what occurred experimentally and evaluate the phenomena qualitatively, the kinetic Monte Carlo (MC) simulation was introduced. The combination of neatly designed experiments by DOE and supporting theoretical simulation is believed to be inspiring in solving similar kinds of problems in the relevant field.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.