• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.27-32
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• 2010

For the flip chip joints processed using Cu pillar bumps and Sn pads, thermal cycling and high temperature storage reliabilities were examined as a function of the Sn pad height. With increasing the height of the Sn pad, which composed of the flip chip joint, from 5 ${\mu}m$ to 30 ${\mu}m$, the contact resistance of the flip chip joint decreased from 31.7 $m{\Omega}$ to 13.8 $m{\Omega}$. Even after thermal cycles of 1000 times ranging from $-45^{\circ}C$ to $125^{\circ}C$, the Cu pillar flip chip joints exhibited the contact resistance increment below 12% and the shear failure forces similar to those before the thermal cycling test. The contact resistance increment of the Cu pillar flip chip joints was maintained below 20% after 1000 hours storage at $125^{\circ}C$.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.227-228
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• 2007

본 연구에서는 플립칩 범프를 형성하는 여러 가지 방법 중 전해도금을 이용하여 Sn-0.7wt%Cu 솔더 범프를 형성 하고자 하였다. 전류밀도에 따른 전류 효율을 알아보기 위하여 전류밀도에 따른 실험적 증착 속도와 이론적 속도를 비교 분석 하였다. 도금 두께는 FE-SEM(Field Emission Scanning Electron Microscope)을 이용하여 측정 하였으며 최종적으로 $20{\mu}m{\times}20{\mu}m{\times}10{\mu}m$ 크기에 $50{\mu}m$ 피치를 가지는 straight wall 형 Sn-0.7wt%Cu 솔더 범프를 형성하고자 하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.109-110
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• 2007

본 연구에서는 범프를 형성하는 여러 가지 방법중 전해도금을 이용하여 Sn-Cu 솔더 범프를 형성하고자 하였다. 기초적인 도금 특성을 알아보기 위하여 전류밀도에 따른 중착속도, 도금 시간에 따른 도금두께 등을 측정하였으며, 최종적으로는 $20{\times}20{\times}10{\mu}m$ 크기에 $50{\mu}m$피치를 갖는 Sn-Cu 솔더 범프를 형성하고자 하였다.

• Journal of Welding and Joining
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• v.29 no.6
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• pp.65-70
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• 2011

The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.25-31
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• 2010

In this study, we investigated the morphology and thermal stability of interfacial phases in joint between lead free solder(Sn-3.0Ag-0.5Cu) and electroless Ni-W-P under bump metallizations(UBM) with different tungsten contents as a function of thermal aging. Content of phosphorus of each deposits was fixed at 8 wt.%, and content of tungsten was variated each 0, 3, 6 and 9 wt.%. Specimens were prepared by reflowing at $255^{\circ}C$, aging range was $200^{\circ}C$ and up to 2 weeks. After reflow process, in the electroless Ni(W)-P/solder joint, the interfacial intermetallic compound(IMC) was showed both $(Cu,Ni)_6Sn_5$ and $(Ni,Cu)_3Sn_4$. UBM and generated IMC at the interface of lead free solder was proportionally increased with aging time. The thickness of IMC was increased because the generation rate of $Ni(W)_3P$ decreased with increasing contents of W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.204-207
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• 2003

The flip chip bonding utilizing self-aligning characteristic of solder becomes mandatory to meet to tolerances for the optical device. In this paper, a parametric study of aging condition and pad size of sample was conducted. A TiW/Cu UBM structure was adopted and sample was aging treated to analyze the effect of intermetallic compound with time variation. After aging treatment, the tendency to decrease in shear strength was measured and the structure of the fine joint area was observed by using SEM, TEM and EDS. In result, the shear strength was decreased of about 20% in the $100{\mu}m$ sample at $170^{\circ}C$ aging compared with the maximum shear strength of same pad size sample. In the case of the $120^{\circ}C$ aging treatment, 17% of decrease in shear strength was measured at the $100{\mu}m$ pad size sample. Also, intremetallic compound of $Cu_6Sn_5$ and $Cu_3Sn$ were observed through the TEM measurement by using an FIB technique that is very useful to prepare TEM thin foil specimens from the solder joint interface.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.351-357
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• 2005

Comparison of shear strength and shear energy of the 48Sn-52In solder bumps reflowed on Cu UBM were made with variations of reflow temperature from $150^{\circ}C$ to $250^{\circ}C$ and reflow time from 1 min to 20 min to establish an evaluation method for the mechanical reliability of solder bumps. Compared to the shear strength, the shear energy of the Sn-52In solder bumps was much more consistent with the solder reaction behavior and the fracture mode at the Sn-52In/Cu interface, indicating that the bump shear energy can be used as an effective tool to evaluate the mechanical integrity of solder/UBM interface.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.469-474
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• 2002

Laser and hot air reflow soldering of PBGA solder ball was investigated. Experimental results showed that surface quality and shear strength of solder bumps reflowed by laser was superior than the solder bumps reflowed by hot air, and the microstructure inside the solder bumps reflowed by laser was much finer. Analysis on interfacial reaction showed that eutectic solder reacted with Au/Ni/Cu pad shortly after the solder was melted. Interface of solder bump reflowed by laser consists of a continuous AuSn$_4$ layer and remnant Au element. Needle-like AuSn$_4$ grew sidewise from interface, and then spread out to the entire interface region. A thin layer of Ni$_3$Sn$_4$ intermetallic compound was found at the interface of solder bump reflowed by hot air, AuSn$_4$ particles distributed inside the whole solder bump randomly. It is the combination effect of the continuous AuSn$_4$ layer and finer eutectic microstructure inside the solder bump reflowed by laser that resulted in higher shear strength.

• Korean Journal of Metals and Materials
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• v.49 no.3
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• pp.237-242
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• 2011

The effect of shearing speed on the shear force and energy of Sn-0Ag-0.5Cu solder ball was investigated. Various UBM (under bump metallurgy)'s on Cu pads were used such as ENEPIG (Electroless Nickel, Electroless Palladium, Immersion Gold; Ni/Pd/Au), ENIG (Electroless Nickel, Immersion Gold; Ni/Au), OSP (Organic Solderability Preservative). To fabricate a shear test specimen, a solder ball, $300{\mu}m$ in diameter, was soldered on a pad of FR4 PCB (printed circuit board) by a reflow soldering machine at $245^{\circ}C$. The solder bump on the PCB was shear tested by changing the shearing speed from 0.01 m/s to 3.0 m/s. As experimental results, the shear force increased with a shearing speed of up to 0.6 m/s for the ENIG and the OSP pads, and up to 0 m/s for the ENEPIG pad. The shear energy increased with a shearing speed up to 0.3 m/s for the ENIG and the OSP pads, and up to 0.6 m/s for the ENEPIG pad. With a high shear speed of over 0 m/s, the ENEPIG showed a higher shear force and energy than those of the ENIG and OSP. The fracture surfaces of the shear tested specimens were analyzed, and the fracture modes were found to have closer relationship with the shear energy than the shear force.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.2
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• pp.55-59
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• 2015

Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection. A novel solder bumping material (SBM) has been developed for the $60{\mu}m$ pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a $45{\mu}m$ diameter and $60{\mu}m$ pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.