• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.256-260
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• 2014

Columnar-structured cesium iodide (CsI) scintillators doped with thallium (Tl) are frequently used as x-ray converters in medical and industrial imaging. In this study we investigated the imaging characteristics of CsI:Tl films with various reflective layers-aluminum (Al), chromium (Cr), and titanium dioxide ($TiO_2$) powder-coated on glass substrates. We used two effusion-cell sources in a thermal evaporator system to fabricate CsI:Tl films on substrates. The scintillators were observed via scanning electron microscopy (SEM), and scintillation characteristics were evaluated on the basis of the emission spectrum, light output, light response to x-ray dose, modulation transfer function (MTF), and x-ray images. Compared to control films without a reflective layer, CsI:Tl films with reflective layers showed better sensitivity and light collection efficiency, and the film with a $TiO_2$ reflective layer showed the best properties.

• 한국세라믹학회지
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• 제56권1호
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• pp.98-103
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• 2019

Optical filters to control light wavelength of displays or cameras are fabricated by multi-layer stacking process of low and high index thin films. The process of multi-layer stacking of thin films has received much attention as an optimal process for effective manufacturing in the optical filter industry. However, multi-layer processing has disadvantages of complicated thin film process, and difficulty of precise control of film morphology and material selection, all of which are critical for transmittance and coloring effect on filters. In this study, the composite $TiO_2$, which can be used to control of UV absorption, coated on nano hollow silica sol, was synthesized as a coating material for optical filters. Furthermore, systematic analysis of the process parameters during the chemical reaction, and of the structural properties of the coating solutions was performed using SEM, TEM, XRD and photo spectrometry. From the structural analysis, we found that the 85 nm nano hollow silica with 2.5 nm $TiO_2$ shell formation was successfully synthesized at proper pH control and titanium butoxide content. Photo luminescence characteristics, excited by UV irradiation, show that stable absorption of 350 nm-light, correlated with a 3.54 eV band gap, existed for the $TiO_2$ shell-nano hollow silica reacted with 8.8 mole titanium butoxide solution. Transmittance observed on substrate of the $TiO_2$ shell-nano hollow silica showed effective absorption of 200-300 nm UV light without deterioration of visible light transparency.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.40-43
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• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

• 멤브레인
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• 제33권6호
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• pp.427-438
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• 2023

본 연구에서는 고투과성 및 높은 염 제거율을 가지는 역삼투막의 성능향상을 위하여 다양한 첨가제 및 계면중합 시 경화 온도 및 시간에 따른 특성평가에 대한 연구가 수행되었다. 첨가제가 없는 막과 첨가제를 첨가한 막의 모폴로지는 모두 "ridge-and-valley" 구조를 나타내어, 폴리아미드 층이 다공성 지지층 표면에 성공적으로 중합되었음을 확인하였다. 또한 2-Ethyl-1,3-hexanediol (EHD) 첨가함으로써 향상된 친수성과 수투과율 가졌으며, 이는 접촉각 측정을 통해서 확인되었다. 최종적으로 97.78%와 98.7%의 NaCl 및 MgSO₄ 제거율과 3.31 L/(m²⋅h⋅bar)의 높은 수투과율을 가진 고투과성 계면중합막을 제조하였다.

• 대한음성학회:학술대회논문집
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• 대한음성학회 1996년도 10월 학술대회지
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• pp.464-467
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• 1996

This paper aims to exploit inter/intra-speaker phoneme sub-class variations as criteria for adaptation in a phoneme recognition system based on a novel neural network architecture. Using a subcluster neural network design based on the One-Class-in-One-Network (OCON) feed forward subnets, similar to those proposed by Kung (2) and Jou (1), joined by a common front-end layer. the idea is to adapt only the neurons within the common front-end layer of the network. Consequently resulting in an adaptation which can be concentrated primarily on the speakers vocal characteristics. Since the adaptation occurs in an area common to all classes, convergence on a single class will improve the recognition of the remaining classes in the network. Results show that adaptation towards a phoneme, in the vowel sub-class, for speakers MDABO and MWBTO Improve the recognition of remaining vowel sub-class phonemes from the same speaker

• 마이크로전자및패키징학회지
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• 제28권4호
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• pp.25-29
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• 2021

본 연구에서는 HVPE 방법을 사용하여 Ni-Pd and Carbon-Nanotube nanoalloys (Ni-Pd-CNT) 위에 α-Ga₂O₃을 성장시켜 Ni-Pd-CNT에 따른 효과를 확인하였다. 그 결과, 무전해 Ni 도금 시간 40초에서 성장한 α-Ga₂O₃ 에피층의 두께는 11 ㎛로 확인되었다. 또한, α-Ga₂O₃ 에피층의 표면 형태는 균열 발생 없이 기판에 대한 우수한 접착력을 보여주었다. 결과적으로, 성장과정에서 발생한 수평 성장에 의해 α-Ga₂O₃ 대의 비대칭면인 ($10{\bar{1}}4$) FWMH 값을 크게 감소할 수 있었다.

• 한국진공학회지
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• 제22권6호
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• pp.313-320
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• 2013

실리콘(Silicon, Si) 기판과 $Al_{0.3}Ga_{0.7}As$/GaAs 다중 양자 우물(multiple quantum wells, MQWs) 간의 격자 부정합 해소를 위해 $AlAs_xSb_{1-x}$ 층이 단계 성분 변화 완충층(step-graded buffer, SGB)으로 이용되었다. $AlAs_xSb_{1-x}$ 층 상에 형성된 GaAs 층의 RMS 표면 거칠기(root-mean-square surface roughness)는 $10{\times}10{\mu}m$ 원자 힘 현미경(atomic force microscope, AFM) 이미지 상에서 약 1.7 nm로 측정되었다. $AlAs_xSb_{1-x}$/Si 기판 상에 AlAs/GaAs 단주기 초격자(short period superlattice, SPS)를 이용한 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs이 형성되었다. $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조는 약 10 켈빈(Kalvin, K)에서 813 nm 부근의 매우 약한 포토루미네선스(photoluminescence, PL) 피크를 보였고, $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 RMS 표면 거칠기는 약 42.9 nm로 측정되었다. 전자 투과 현미경(transmission electron microscope, TEM) 단면 이미지 상에서 AlAs/GaAs SPS 로부터 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs까지 격자 결함들(defects)이 관찰되었고, 이는 격자 결함들이 $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 표면 거칠기와 광 특성에 영향을 주었음을 보여준다.

• 한국표면공학회지
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• 제48권2호
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• pp.50-55
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• 2015

$Al_2O_3$ thin films were deposited on the moth eye anti-reflective nanostructured polycarbonate films by atomic layer deposition (ALD) techniques. Without ALD-$Al_2O_3$ thin films, moth eye anti-reflective nanostructured films had a high optical transmittance of 95.47% at a wavelength of 550 nm and a very poor hardness of 0.1381 GPa. With increasing the thickness of $Al_2O_3$ thin films from 5 to 25 nm, the transmittance of moth eye anti-reflective nanostructured films was gradually decreased from 94.94 to 93.12%. On the other hand, the hardness of the films was greatly increased from 0.3498 to 0.7806 GPa with increasing the thickness of $Al_2O_3$ thin films. This result shows that ALD thin films can be applied to improve mechanical properties with an adequate optical transmittance of the conventional moth eye anti-reflection nanostructure films.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.68-71
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• 2020

In this study, SiNx and Al₂O₃ thin film was manufactured using PECVD deposition process and applied to crystalline silicon solar cells, resulting in 16.7% conversion efficiency. The structural improvement experiment of the rear electrode resulted in a 1.7% improvement in conversion efficiency compared to the reference cell by reducing the recombination rate of minority carriers and increasing the carrier lifetime by forming a passivation layer consisting of SiNx and Al₂O₃ thin films through the PECVD process.

• Applied Science and Convergence Technology
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• 제24권2호
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• pp.33-40
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• 2015

$ZrO_2$ and Al-Zr composite oxide film was prepared by vacuum assisted sol-gel dip coating method and anodizing. $ZrO_2$ films annealed above $400^{\circ}C$ have tetragonal structure. $ZrO_2$ layers inside etch pits were successfully coated from the $ZrO_2$ sol. The double layer structures of samples were obtained after being anodized at 100 V to 600 V. From the TEM images, it was found that the outer layer was $Al_2O_3$, the inner layer was multi-layer of $ZrO_2$, Al-Zr composite oxide and Al hydrate. The capacitance of $ZrO_2$ coated foil exhibited about 28.3% higher than that of non-coating foil after being anodized at 100 V. The high capacitance of $ZrO_2$ coated foils anodized at 100 V can be attributed to the relatively high percentage of inner layer in total thickness. The electrical properties, such as withstanding voltage and leakage current of coated and non-coated Al foils showed similar values. From the results, $ZrO_2$ and Al-Zr composite oxide is promising to be used as the partial dielectric of high voltage capacitor to increase the capacitance.