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http://dx.doi.org/10.6117/kmeps.2021.28.4.025

Characterization of Alpha-Ga2O3 Epilayers Grown on Ni-Pd and Carbon-Nanotube Based Nanoalloys via Halide Vapor Phase Epitaxy  

Cha, An-Na (Department of Chemical Engineering, Chonnam National University)
Lee, Gieop (Department of Chemical Engineering, Chonnam National University)
Kim, Hyunggu (Department of Chemical Engineering, Chonnam National University)
Seong, Chaewon (Department of Chemical Engineering, Chonnam National University)
Bae, Hyojung (Optoelectronics Convergence Research Center, Chonnam National University)
Rho, Hokyun (Energy Convergence Core-Facility, Chonnam National University)
Burungale, Vishal Vilas (Department of Chemical Engineering, Chonnam National University)
Ha, Jun-Seok (Department of Chemical Engineering, Chonnam National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.28, no.4, 2021 , pp. 25-29 More about this Journal
Abstract
This paper demonstrates the utility of the Ni-Pd and carbon-nanotube (Ni-Pd-CNT)-based nanoalloy to improve the α-Ga2O3 crystal quality using the halide-vapor-phase epitaxy (HVPE) method. As result, the overall thickness of the α-Ga2O3 epitaxial layer increased from a Ni electroless plating time of 40 s to 11 ㎛ after growth. In addition, the surface morphologies of the α-Ga2O3 epilayers remained flat and crack-free. The full-width half-maximum results of the X-ray diffraction analysis revealed that the ($10{\bar{1}}4$) diffraction patterns decreased with increasing nominal thickness.
Keywords
${\alpha}-Ga_2O_3$; HVPE; ELOG; Ni-Pd nanoalloys;
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