Formation of Al0.3Ga0.7As/GaAs Multiple Quantum Wells on Silicon Substrate with AlAsxSb1-x Step-graded Buffer |
Lee, Eun Hye
(Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology)
Song, Jin Dong (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology) Yoen, Kyu Hyoek (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology) Bae, Min Hwan (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology) Oh, Hyun Ji (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology) Han, Il Ki (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology) Choi, Won Jun (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology) Chang, Soo Kyung (Department of Physics, Yonsei University) |
1 | T. Mano, T. Kuroda, K. Mitsuishi, Y. Nakayama, T. Noda, and K. Sakoda, Appl. Phys. Lett. 93, 203110 (2008). DOI ScienceOn |
2 | C. J. Hill, A. Soibel, S. A. Keo, J. M. Mumolo, D. Z. Ting, and S. D. Gunapala, Electron. Lett. 46, 1286 (2010). DOI ScienceOn |
3 | S. L. Diedenhofen, G. Grzela, E. Haverkamp, G. Bauhuis, J. Schermer, and J. G. Rivas, Sol. Energ. Mat. Sol. C. 101, 308 (2012). DOI ScienceOn |
4 | L. Cavigli, M. Abbarchi, S. Bietti, C. Somaschini, S. Sanguinetti, N. Koguchi, A. Vinattieri, and M. Gurioli, Appl. Phys. Lett. 98, 103104 (2011). DOI ScienceOn |
5 | P. S. Dutta and H. L. Bhat, J. Appl. Phys. 81, 5821 (1997). DOI ScienceOn |
6 | K. Ma, R. Urata, D. A. B. Miller, and J. S. Harris, IEEE J. Quantum Electron. 40, 800 (2004). DOI ScienceOn |
7 | Y. B. Bolkhovityanov and O. P. Pchelyakov, Physics-Uspekhi 51, 437 (2008). DOI ScienceOn |
8 | Y. Shimizu and Y. Okada, J. Cryst. Growth 265, 99 (2004). DOI ScienceOn |
9 | R. D. Dupuis and C. J. Pizone, J. Cryst. Growth 93, 435 (1988). |
10 | Y. K. Noh, M. D. Kim, J. E. Oh, and W. C. Yang, J. Korean Phys. Soc. 57, 173 (2010). DOI ScienceOn |
11 | K. Akahane, N. Yamamoto, S. Gozu, and N. Ohtani, J. Cryst. Growth 264, 21 (2004). DOI ScienceOn |
12 | A. N. Semenov, O. G. Lyublinskaya, V. A. Solov'ev, B. Ya Mel'tser, and S. V. Ivanov, Semicond. 42, 74 (2011). |
13 | S. Saravanan, Y. Hayashi, T. Soga, T. Jimbo, M. Umeno, N. Sato, and T. Yonehara, J. Appl. Phys. 89, 5215 (2001). DOI ScienceOn |
14 | H. Tanoto, S. F. Yoon, W. K. Loke, K. P. Chen, E. A. Fitzgerald, C. Dohrman, and B. Narayanan, J. Appl. Phys. 103, 104901 (2008). DOI ScienceOn |
15 | S. H. Shin, J. D. Song, J. Y. Lim, H. C. Koo, and T. G. Kim, Mater. Res. Bull. 47, 2927 (2012). DOI ScienceOn |
16 | K. Y. Cheng, Proceedings of the IEEE 85, 1694 (1997). DOI ScienceOn |
17 | A. Jallipalli, G. Balakrishnan, S. H. Huang, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, J. Cryst. Growth 303, 449 (2007). DOI ScienceOn |
18 | B. Z. Nosho, B. R. Bennett, L. J. Whitman, and M. Goldenberg, J. Vac. Sci. Technol. B 19, 1626 (2001). DOI ScienceOn |