• Journal of Korean Biological Nursing Science
• /
• v.21 no.4
• /
• pp.283-291
• /
• 2019

Purpose: The aim of this study was to identify awareness and competency for Multi-Drug Resistant Organisms (MDRO) infection control in nursing students with experience of clinical practice. Methods: This cross-sectional descriptive study was conducted from March 2019 to May 2019 by including 231 nursing students in four nursing schools located in Seoul, Gyeonggi-do and Chungcheongnam-do. The data were collected using self-report questionnaires. Results: The awareness and the competency for Carbapenem-Resistant Enterobacteriaceae (CRE) infection control were lower than that of Methicillin-Resistant Staphylococcus aureus (MRSA). The agreement between the awareness and the competency of MDRO infection control in participants was low with regard to isolation, contact precautions, and disinfection for MRSA. Also, it was low with respect to disinfection, isolation, contact precautions, and carrier identification for CRE. The awareness and the competency of MDRO infection control exhibited significant positive correlation. Conclusion: The infection control competency is required to prevent MDRO infection. In order to enhance the infection control competency, it is important to raise awareness about MDRO infection control by providing education based on the guidelines and the principles of infection control.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.8
• /
• pp.1416-1421
• /
• 2008

A 10 dB branch line hybrid coupler included with defected ground structure (DGS) is proposed. In this contribution, a contact between the grounded metal housing and DGS is avoided, which has been a serious problem in applying DGS to high frequency circuits. An isolation between the metal housing and the DGS pattern is provided by inserting additional substrate between DGS and the metal package. Therefore, it is possible to design branch line hybrid couplers having highly asymmetric power dividing ratio using these DGS structure, which is demonstrated in this paper. The designed and fabricated branch line hybrid coupler using DGS is well packaged in a metal housing without touching the ground metal directly. The measurement is performed under realistic practical operating situations because it is packaged in a metal housing. The measured performances of the fabricated 10dB coupler shows a 1:9 asymmetric power dividing ratio at output ports, as predicted. In addition, the measured performances in terms of matching, isolation, and phase difference are in excellent agreement with the simulated characteristics.

• Korean Journal of Materials Research
• /
• v.1 no.3
• /
• pp.132-138
• /
• 1991

A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.4
• /
• pp.402-409
• /
• 2013

An innovative application of voltage-contrast (VC) inspection allowed inline detection of NMOS leakage in dense SRAM cells is presented. Cell sizes of SRAM are continual to do the shrinkage with bit density promotion as semiconductor technology advanced, but the resulting challenges include not only development of smaller-scale devices, but also intra-devices isolation. The NMOS leakage caused by the underneath n+/P-well shorted to the adjacent PMOS/N-well was inspected by the proposed electron-beam (e-beam) scan in which VC images were compared during the in-line process step of post contact tungsten (W) CMP (Chemical Mechanical Planarization) instead of end-of-line electrical test, which has a long response time. A series of experiments based on the mechanism for improving the intra-well isolation was performed and verified by the inline VC inspection. An optimal process-integration condition involved to the tradeoff between the implant dosage and photo CD was carried out.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.3
• /
• pp.116-120
• /
• 2013

This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.

• Journal of Sensor Science and Technology
• /
• v.20 no.2
• /
• pp.77-81
• /
• 2011

This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.33 no.4
• /
• pp.41-46
• /
• 2005

In this paper, a new method for suppressing microwelding on the RF MEMS (Radio Frequency Microelectromechanical System) direct contact switches is introduced. Two kinds of refractory metals, tungsten and molybdenum were coated onto the contact point of the switches and the effect of the coating was examined. The changes in insertion loss and isolation at the switch were measured by using network analyzer and power loss was evaluated by power measurement. The results revealed that while tungsten and molybdenum showed higher contact resistance than gold in low input power range, they enhanced the power handling capability and reliability of the switches in high input power region.

• The Korean Nurse
• /
• v.33 no.5
• /
• pp.46-62
• /
• 1995

The purpose of this study was to identify the level of HIV/AIDS related knowledge and attitudes of Korean childbering women. The subject were 1152 Korean women who were living in the Seoul area and whose age was between 17-50 years. Data was collected by self reporting with a questionnaire of 57 items developed by the researcher. The reliability of the instrument for the HIV/AIDS related knowledge and attitudes were Cronbach's alpha. .6954 and .7987 respectively. The results were as follows: The mean age of the subjects was 26 years and 46.8% of them were married. The mean score for HIV/AIDS related knowledge was 14.7 out of a possible maximum score of 22. The correct answer rate for HIV/AIDS related knowledge was between 87.0-94.1% for the risk factors. and 36.4-54.8% for the transmission mode. Even though 87% of the subjects knew that homosexuals are risk group for HIV/AIDS. only half(55.8%) of the subjects answered that anal sex is the transmission mode. And only 57% of the subjects knew that HIV/AIDS transmission is possible through heterosexual contact. Their agreement level for attitudes was in order of communal coping (95%). pregnant women protection (94%). Problem appraisal (82%). patients isolation(68%). and disclosure of infection(67%). It was shown that the group who had a pregnancy (t=2.07, p=.039), used contraceptives (t=2.57, p=.OO1). and the group of college level graduates(t=3.61, p=.000) had a higher level of HIV/AIDS related knowledge. The agreement level of pregnant women protection. patient isolation. and problem appraisal were higher in the group of having had a pregnancy, having used contraceptives. and the group over 30 years of age. It was concluded that Korean childbearing women were quite knowledgeable about the risk factors but confused about the transmission mode. especially heterosexual contact. and they showed responsive attitudes to the HIV/AIDS issues considering the 339 infected cases in Korea. They preferred isolation of patients and communal coping as behavioral attitudes. Therefore it can be suggested that a HIV/AIDS prevention program should be focused on transmission mode.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.4
• /
• pp.7-12
• /
• 2008

This paper presents a lateral resistive contact RF MEMS switch using comb drive. Our goal was to fabricate the RF MEMS switch with high reliability and good RF characteristics for front end module in wireless transceiver system. Therefore, comb drive is used for large contact force in order to achieve low insertion loss and small off-state capacitance in order to achieve high isolation. The single crystalline silicon is used for mechanical reliability. As a result, the developed switch showed insertion loss less than 0.44 dB at 2 GHz, isolation greater than 60 dB, and low actuation voltage at 26 V.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.4
• /
• pp.183-188
• /
• 2016

This paper presents the design and characterization of wide band ohmic microswitch with an actuation voltage as low as 20~25 V, and a restoring force of 14.1 μN. The design of the proposed switch is primarily composed of an electrostatic actuator, bridge membrane, cantilever (beam) and coplanar waveguide, suspended over the substrate. The analysis shows an insertion loss of −0.002 dB at 1GHz and remains as low as −0.35 dB, even at 100 GHz. The isolation loss of the switch is sustained at −21.09 dB at 100GHz, with a peak value of −99.58 dB at 1 GHz and up-state capacitance of 4 fF. To our knowledge, this is the first demonstration of a series contact switch, which works over a wide bandwidth (DC-100 GHz) and with such a high and sustained isolation, even at high frequencies and with an excellent figure of merit (f_c=1/2.pi.Ron.Cu= 39.7 THz).