• English Language & Literature Teaching
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• v.16 no.3
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• pp.119-139
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• 2010

The purpose of this paper was to examine various aspects of meaning negotiation process in online chatting. Korean college students were asked to engage in chatting on the Internet over the course of a semester-long period, and chatting transcripts were analyzed in terms of sources of communication breakdown, signals to indicate communication breakdown, strategies to overcome communication breakdown, and ways of closing meaning negotiation. According to the findings of the study, lack of background knowledge and incoherent string of sentences in text were two major barriers creating communication problems. Subjects were able to use signals to indicate their communication difficulties, and overcome them by using different strategies. In doing so, however, they were found to suffer a narrow range of signals and strategies, which showed their limited communicative ability in the management of interaction, and indicated a clear, strong need for an extension of discourse and strategic competences of Korean students for more effective and smoother transition of message in everyday interaction.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.2
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• pp.189-194
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• 2015

In this paper, We study case for rotary machine with a breakdown analysis. Also We analyze the solution of the safety and the future breakdown of the each rotary machine through vibration analysis using measurement data. The implementation of the measurement and the test results are discussed. The result that is applied condition Monitoring & Diagnostics on this paper show the future breakdown of rotary machine.

• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.200-204
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• 2012

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.4
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• pp.917-921
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• 2013

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.2
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• pp.195-202
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• 2015

Rotating equipment seldom fails without notice, so breakdowns can usually be predicted and avoided by watching for signs of failure. In this paper, We study case for rotary machine with a breakdown analysis. Also We analyze the solution of the safety and the future breakdown of the each rotary machine through vibration analysis using measurement data. The implementation of the measurement and the test results are discussed. The result with suggested method showed netter stable Condition Monitoring & Diagnostics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.9
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• pp.1255-1259
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• 2013

A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.12
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• pp.1872-1876
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• 2012

A calculation method of the breakdown voltage for the drain region with the cylindrical structure in LDMOS is proposed. The depletion region of the drain is divided into many smaller regions and the doping concentration of each split region is assumed to be uniformly distributed. The field and potential in each split region is calculated by the integration of the Poisson equation and the ionization integral method is used to compute the breakdown voltage. The breakdown voltage resulted from the proposed method shows the maximum relative error of 2.2% compared with the result of the 2-dimensional device simulation using BANDIS.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.

• Journal of information and communication convergence engineering
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• v.16 no.1
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

• ETRI Journal
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• v.37 no.1
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• pp.157-164
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• 2015

As GPU power consumption in smartphones increases with more advanced graphic performance, it becomes essential to estimate GPU power consumption accurately. The conventional GPU power model assumes, simply, that a GPU consumes constant power when turned on; however, this is no longer true for recent smartphone GPUs. In this paper, we propose an accurate GPU power model for smartphones, considering newly adopted dynamic voltage and frequency scaling. For the proposed GPU power model, our evaluation results show that the error rate for system power estimation is as low as 2.9%, on average, and 4.6% in the worst case.