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http://dx.doi.org/10.5370/KIEE.2013.62.9.1255

The Calculation Method of the Breakdown Voltage for the Drain Region with the Spherical Structure in High Voltage Analog CMOS  

Lee, Un Gu (Dept. of Information and Communication, Bucheon University)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.62, no.9, 2013 , pp. 1255-1259 More about this Journal
Abstract
A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.
Keywords
Breakdown voltage; Spherical structure; Analog CMOS; Drain engineering; Ionization integral;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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