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http://dx.doi.org/10.6109/jkiice.2013.17.2.372

Analysis for Breakdown Voltage of Double Gate MOSFET according to Device Parameters  

Jung, Hakkee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.17, no.2, 2013 , pp. 372-377 More about this Journal
Abstract
This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.
Keywords
DGMOSFET; breakdown voltage; channel length; Gaussian function; Poisson equation; channel thickness; gate oxide thickness;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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