• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.315-318
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• 2005

The effect of plasma cleaning was examined on package delamination phenomena in the integrated circuit (IC) packaging process. Without plasma cleaning, delamination was observed for all three experimental treatments applied after the packaging step, which include bake of If, reflow, and bake of If followed by reflow However, no delamination was observed when the plasma cleaning was performed before and after the wire bonding step. Plasma cleaning was found to be a critical step to improve the reliability of the package by reducing the possibility of contact failure between die pad and bonding wire.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.7-10
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• 2016

The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.75-79
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• 2006

The effect of ozone and/or ultrasound treatments on the efficiency of slurry removal in post sliced cleaning (PSC) of silicon ingot was studied. Efficiency of slurry removal was evaluated as functions of time, temperature and surfactant with DOE (Design of Experiment) method. Residual slurries were observed on the wafer surface in case of cleaning by ozone or ultrasound separately. However, a clean wafer surface was appeared when cleaned with ozone and ultrasound simultaneously. It has found that cleaning time was the main effect among temperature, time and surfactant. Elevated temperature, addition of surfactant and high ozone concentration helped to accelerate efficient removal of slurry. The improvement of removal efficiency seems to be related to the formation of more active OH radicals. The highly cleaned surface was achieved at 10 wt% ozone, 1 min and 10 vol% surfactant with ultrasound. Application of ozone and ultrasound might be a useful method for PSC process in wafer cleaning.

• Journal of Conservation Science
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• v.35 no.1
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• pp.19-31
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• 2019

To study the cleaning effects and post-treatment stability assessment of various methods of cleaning textiles with metal thread, six naturally-soiled historical textiles with metal thread were investigated at the Metropolitan Museum of Art, New York. Prior to the cleaning of fabricated gold, silver, and copper thread that had been glued onto a paper substrate, the artificial deterioration was carried out in a controlled environment with light(UV and daylight), and temperature and humidity factors which would weaken and damage the samples. A synthetic soil mixture was applied to the samples to imitate soil found on the historic and archaeological textiles with metal thread; the cleaning effect and post-treatment assessment were investigated by use of three textile cleaning methods: mechanical cleaning, wet cleaning, and solvent cleaning. While investigating the naturally-soiled textiles with metal thread, it was determined that the soil colors and sizes of contaminating particles of each textile were different due to the diversity of original environmental factors and conditions. After cleaning with kneaded rubber, Stoddard solvent, n-decane or n-hexane, a bright, clean effect was apparent. Kneaded rubber was successful in picking up both large and small particles, but its stickiness caused some of the metal leaf to peel off. Stoddard solvent produced a good cleaning effect, but after use of n-hexane and n-decane in the cleaning process, a white layer of residue remained on the textile's surface. Wet cleaning was not effective and the rapid humidity changes between wet and dry conditions caused the edges of the paper substrate to lose their original shape.

• Journal of Korean Society of Water and Wastewater
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• v.31 no.6
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• pp.501-510
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• 2017

In this study, it is estimated that ceramic membrane process which can operate stably in harsh conditions replacing existing organic membrane connected with coagulation, sedimentation etc.. Jar-test was conducted by using artificial raw water containing kaolin and humic acid. It was observed that coagulant (A-PAC, 10.6%) 4mg/l is the optimal dose. As a results of evaluation of membrane single filtration process (A), coagulation-membrane filtration process (B) and coagulation-sedimentation-membrane filtration process (C), TMP variation is stable regardless of in Flux $2m^3/m^2{\cdot}day$. But in Flux $5m^3/m^2{\cdot}day$, it show change of 1-89.3 kpa by process. TMP of process (B) and (C) is increased 11.8, 0.6 kpa each. But, the (A) showed the greatest change of TMP. When evaluate (A) and (C) in Flux $10m^3/m^2{\cdot}day$, TMP of (A) stopped operation being exceeded 120 kpa in 20 minutes. On the other hand, TMP of (C) is increased only 3 kpa in 120 minutes. Through this, membrane filtration process can be operated stably by using the linkage between the pretreatment process and the ceramic membrane filtration process. Turbidity of treated water remained under 0.1 NTU regardless of flux condition and DOC and $UV_{254}$ showed a removal rate of 65-85%, 95% more each at process connected with pretreatment. Physical cleaning was carried out using water and air of 500kpa to show the recovery of pollutants formed on membrane surface by filtration. In (A) process, TMP has increased rapidly and decreased the recovery by physical cleaning as the flux rises. This means that contamination on membrane surface is irreversible fouling difficult to recover by using physical cleaning. Process (B) and (C) are observed high recovery rate of 60% more in high flux and especially recovery rate of process (B) is the highest at 95.8%. This can be judged that the coagulation flocs in the raw water formed cake layer with irreversible fouling and are favorable to physical cleaning. As a result of estimation, observe that ceramic membrane filtration connected with pretreatment improves efficiency of filtration and recovery rate of physical cleaning. And ceramic membrane which is possible to operate in the higher flux than organic membrane can be reduce the area of water purification facilities and secure a stable quantity of water by connecting the ceramic membrane with pretreatment process.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.43-49
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• 2013

We have studied on ozonate water cleaning mechanisms to apply in manufacturing process of 156 mm silicon wafer which is used in the solar cell fabrication. We have analyzed contamination sources on wafer surface which causes poor quality and performance of products in fabrication process, and examined cleaning process using ozonate water to eliminate it. Using this novel technology particles are removed over 94%, and remained organic materials are removed more over 45%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.569-572
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• 2003

In this study, we evaluated the dilute HF cleaning to reduce residual defects made by metal CMP process. The purpose of this test is to observe the existence of barrier metal damage during DHF cleaning on condition that it should not affect metal thin film reliability, so we will get rid of slurry residual particles as a main defect of the metal CMP process for the better yield. In-line defect data showed us that slurry residual particles were removed by DHF application. The HF rinse significantly reduced metal contamination levels and surface roughness. The best effect by additional oxide loss was discovered when Dilute HF condition is 10".

• Applied Microscopy
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• v.50
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• pp.28.1-28.6
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• 2020

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.99.2-99.2
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafer and surface morphology. It is observed that passivation quality of a-Si:H thin-films on c-Si wafer highly depends on wafer surface conditions. The MCLT(Minority carrier life time) of wafer incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with cleaning process and surface morpholgy. By applying improved cleaning processes and surface morphology we can obtain the MCLT of $200{\mu}sec$ after H-termination and above 1.5msec after i a-Si:H thin film deposition, which has implied open circuit voltage of 0.720V.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.72-75
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• 2023

Carbon neutrality has been emerged as important mission for all the manufacturing industry to reduce energy usage and carbon emission equivalent. Korean semiconductor and display manufacturing industries are also in huge interest by minimize the energy usage as well as to find a less global warming product gases in both etch and cleaning. In addition, Korean government is also investing long term research and development plan for the safe environment in various ways. In this paper, we revisit previous research activities on carbon emission equivalent and current research activities performed in semiconductor process diagnosis research center at Myongji University with respect to the reduction of NF3 usage for the PECVD chamber cleaning, and we present the analytical result of the exhaust gas with residual gas analysis in both 6 inches and 12 inches PECVD equipment. The presented result can be a reference study of the development of new substitution gas in near future to compare the cleaning rate of the silicon oxide deposition chamber.