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http://dx.doi.org/10.4313/JKEM.2003.16.7.569

Investigation on DHF Application at Metal CMP Cleaning Process  

김남훈 (중앙대학교 전지전자공학부)
김상용 ((주)아남반도체)
김인표 (중앙대학교 전지전자공학부)
장의구 (중앙대학교 전지전자공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.7, 2003 , pp. 569-572 More about this Journal
Abstract
In this study, we evaluated the dilute HF cleaning to reduce residual defects made by metal CMP process. The purpose of this test is to observe the existence of barrier metal damage during DHF cleaning on condition that it should not affect metal thin film reliability, so we will get rid of slurry residual particles as a main defect of the metal CMP process for the better yield. In-line defect data showed us that slurry residual particles were removed by DHF application. The HF rinse significantly reduced metal contamination levels and surface roughness. The best effect by additional oxide loss was discovered when Dilute HF condition is 10".
Keywords
DHF; Barrier metal; Oxide loss; Residue; Metal contamination;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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