Browse > Article
http://dx.doi.org/10.3740/MRSK.2006.16.2.075

Post Sliced Cleaning of Silicon Wafers using Ozone and Ultrasound  

Choi, Eun-Suck (Leading Project Team, R & D Center, Siltron Inc.)
Bae, So-Ik (Leading Project Team, R & D Center, Siltron Inc.)
Publication Information
Korean Journal of Materials Research / v.16, no.2, 2006 , pp. 75-79 More about this Journal
Abstract
The effect of ozone and/or ultrasound treatments on the efficiency of slurry removal in post sliced cleaning (PSC) of silicon ingot was studied. Efficiency of slurry removal was evaluated as functions of time, temperature and surfactant with DOE (Design of Experiment) method. Residual slurries were observed on the wafer surface in case of cleaning by ozone or ultrasound separately. However, a clean wafer surface was appeared when cleaned with ozone and ultrasound simultaneously. It has found that cleaning time was the main effect among temperature, time and surfactant. Elevated temperature, addition of surfactant and high ozone concentration helped to accelerate efficient removal of slurry. The improvement of removal efficiency seems to be related to the formation of more active OH radicals. The highly cleaned surface was achieved at 10 wt% ozone, 1 min and 10 vol% surfactant with ultrasound. Application of ozone and ultrasound might be a useful method for PSC process in wafer cleaning.
Keywords
PSC; ozone; ultrasound; time; pH;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 Y. J. Huh and C. J. Lee, Korea Patent, Pub, No. 10-1999-000441
2 J. W. Kang, K. H. Lee and C. I. Koh, J. Kor. Soc. Environ. Eng., 19(11), 1389 (1997)
3 J. W. Kang, J. Environ. Hi-tech., 1,5 (1994)
4 DICER, DICER Techlnfo, Part II, 3(8),398 (2004)
5 S. N. Nam, C. I. Koh and J. W. Kang, J. Kor. Solid Wastes Eng. Soc., 17(6), 705 (2000)
6 T. Ohmi, T. Isagawa, M. Kogure and T. Imaoka, J. Electrochem. Soc., 140(3), 804 (1993)   DOI
7 J. W. Kang, H. C. Choi, S. W. Jung and S. I. Choie, J. Kor. Soc. Environ. Eng., 15(3), 537 (1993)
8 M. S. Park and M. K. Yang, Korean J. Sanitation, 17(2), 1 (2002)   과학기술학회마을
9 M. Huh, J. S. Lim and B. G. Kim, J. Korean Environ, Sci, Soc., 7(4), 493 (1998)   과학기술학회마을
10 S. Noda, K. kawase, H. Horibe, M. Kuzumoto and T. Kataoka, J. Electrochem. Soc., 152(1), G73 (2005)   DOI   ScienceOn
11 F. De Smedt, S. De Gendt, M. M. Heyns and C. Vinckier, J. Electrochem. Soc., 148(9), G487 (2001)   DOI   ScienceOn
12 M, Alessaridri, E. Bellandi, F. Pipia, F. Cazzaniga, K. Wolke and M, Schenkl, Solid State Phenomena, 65-66, 27 (1999)   DOI
13 S. Ojima, K. Kubo, M. Kato, M. Toda and T. Ohmi, J. Electrochem. Soc., 144(4), 1482 (1997)   DOI
14 W. Kern, Handbook of Semiconductor Wafer Cleaning ？Technology, p. 3, Noyes Publications, New Jersey (1993)
15 S. Noda, M. Miyamoto, H. Horibe, I. Oya, M. Kuzumoto and T. Kataoka, J. Electrochem. Soc., 150(9), G537 (2003)   DOI   ScienceOn