• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.9-13
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• 2002

A polyimide-type electrostatic chuck (ESC) was fabricated for the application of holding 8-inch silicon wafers in the oxide etching equipment. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on top of thin coated copper substrates for the good electrical contacts, and the helium gas cooling technique was used for the temperature uniformity of the silicon wafers. The ESC was essentially working with an unipolar operation, which was easier to fabricate and operate compared to a bipolar operation. The chucking force of the ESC has been measured to be about 580 gf when the applied voltage was 1.5 kV, which was considered to be enough force to hold wafers during the dry etching processing. The employment of the ESC in etcher system could make 8% enhancement of the wafer processing yield.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.71-74
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• 2012

Uniformity of the wafer temperature is one of the important factors in etching process. Plasma, chucking force, backside helium pressure and the surface temperature of ESC(electrostatic chuck) affect the wafer temperature. ESC consists of several layers of structure. Each layer has own thermal resistance and the Si-adhesive layer has highest thermal resistance among them. In this work, the temperature distribution of ESC was analyzed by 3-D FEM with various defects and the thickness deviation of the Si-adhesive layer. The result with Si-adhesive layer with the low center thickness deviation shows modified temperature distribution of ESC surface.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.7
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• pp.53-63
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• 2022

Recently, the use of aluminum components in the reduction of the vehicle weight to improve fuel efficiency and reduce carbon dioxide emissions has increased. In the aluminum machining cutting process, hole-making is an important process that accounts for 30% of the machining process. Although many studies have been conducted using the continuously advancing hole processing technology, studies on the machinability of the tool depending on the type of chuck on the workpiece are still lacking. In this study, the machining performance of cemented carbide burnishing drills was compared and analyzed according to chuck type. The burnishing drill was used to create a hole in the AL6061 workpiece, and the surface roughness and dimensional accuracy of the hole were examined according to the type of chuck while monitoring the spindle load.

• Korean Journal of Materials Research
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• v.17 no.12
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• pp.642-647
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• 2007

We investigated dry etching of acrylic (PMMA) in $O_2/N_2$ plasmas using a multi-layers electrode reactive ion etching (RIE) system. The multi-layers electrode RIE system had an electrode (or a chuck) consisted of 4 individual layers in a series. The diameter of the electrodes was 150 mm. The etch process parameters we studied were both applied RIE chuck power on the electrodes and % $O_2$ composition in the $N_2/O_2$ plasma mixtures. In details, the RIE chuck power was changed from 75 to 200 W.% $O_2$ in the plasmas was varied from 0 to 100% at the fixed total gas flow rates of 20 sccm. The etch results of acrylic in the multilayers electrode RIE system were characterized in terms of negatively induced dc bias on the electrode, etch rates and RMS surface roughness. Etch rate of acrylic was increased more than twice from about $0.2{\mu}m/min$ to over $0.4{\mu}m/min$ when RIE chuck power was changed from 75 to 200 W. 1 sigma uniformity of etch rate variation of acrylic on the 4 layers electrode was slightly increased from 2.3 to 3.2% when RIE chuck power was changed from 75 to 200 W at the fixed etch condition of 16 sccm $O_2/4\;sccm\;N_2$ gas flow and 100 mTorr chamber pressure. Surface morphology was also investigated using both a surface profilometry and scanning electron microscopy (SEM). The RMS roughness of etched acrylic surface was strongly affected by % $O_2$ composition in the $O_2/N_2$ plasmas. However, RIE chuck power changes hardly affected the roughness results in the range of 75-200 W. During etching experiment, Optical Emission Spectroscopy (OES) data was taken and we found both $N_2$ peak (354.27 nm) and $O_2$ peak (777.54 nm). The preliminarily overall results showed that the multi-layers electrode concept could be successfully utilized for high volume reactive ion etching of acrylic in the future.

• Cartoon and Animation Studies
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• s.36
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• pp.303-323
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• 2014

After TV Broadcasting service started, American Animation Industry changed dramatically. Through 1930th to 1940th, Major Animation Studios made every effort to adapt to new Animation production environment. Those efforts led rapid improvement of Animation again by succession of heritage in the golden age of American Animation. in spite of successful outcome, some critic like Bernard Oma blamed Animation on repeated chasing pattern, glamorized violence with exaggeration and humor caused by lack of idea. Nevertheless the decade passed by, achievement of the era still have influenced today. The animated films of the age have attractive power in comparison to today's works and Chuck Jones was a glamorous one of the age-leading masters. "Tom and Jerry" series, "Bugs Bunny", "Daffy Duck", and so on, he planned, designed characters and directed those masterpieces. In this study, episodes of "Tom and Jerry" that had been directed by Chuck Jones during 1963 and 1967 are analysed in the view point of direction style. In recently, Korean Animation Industry seems to be accumulated power for rising again by showing new animations that are adapted to new media. Thus, this study aims to give an idea for the new vision of Korean Animation through analysing Chuck Jones' Masterpieces.

• KSTLE International Journal
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• v.2 no.2
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• pp.114-119
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• 2001

The distribution of magnetic flux density of electro-magnetic chucks may clarify the clamping characteristics, which is strongly related to the machining efficiency and machining accuracy in surface grinding machine. Therefore the distribution of the normal and the tangential components of magnetic flux density have been analyzed theoretically. It appears that the normal component of magnetic flux density increases and the tangential component of magnetic flux density increases as the ratio of the separator width to the pitch, e/p decreases. The results seem to increase the stability and uniformity of normal component of magnetic flux density for the decreased e/p.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.31-36
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• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Food Science of Animal Resources
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• v.30 no.6
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• pp.1024-1030
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• 2010

The focus of the study was to maximize the output data for Korean cuisine. This study evaluated the nutritional retention factor for different cuts of Korean beef (Hanwoo beef) subjected to various cooking methods. Five cuts (short rib, sirloin, chuck roll, tenderloin, and fore shank) of Korean Hanwoo beef were prepared and used in this experiment. Two different cooking methods (dry-heat cooking and moisture-heat cooking) were applied to each cut. The sodium contents of dry-heat cooked short rib (86.44), sirloin (76.81), tenderloin (86.65), and fore shank (85.89) decreased. Potassium contents of dryheat cooked sirloin (94.99), chuck roll (89.19), and fore shank (92.66) decreased. Calcium contents of dry-heat cooked sirloin (61.49), chuck roll (73.97), and fore shank (91.46) decreased. Iron contents of dry-heat cooked chuck roll (79.71), and tenderloin (90.79) decreased. Phosphorus contents of dry-heat cooked sirloin (87.87), and tenderloin (99.88) decreased. Mineral contents of all cuts cooked by moisture-heat decreased. Finally, the nutritional retention factor represents output data of each cooking method with yield % of each item.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.266-270
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• 2003

We studied BCl$_3$ dry etching of GaAs in a planar inductively coupled plasma system. The investigated process parameters were planar ICP source power, chamber pressure, RIE chuck power and gas flow rate. The ICP source power was varied from 0 to 500 W. Chamber pressure, RIE chuck power and gas flow rate were controlled from 5 to 15 mTorr, 0 to 150 W and 10 to 40 sccm, respectively. We found that a process condition at 20 sccm $BCl_3$ 300 W ICP, 100 W RIE and 7.5 mTorr chamber pressure gave an excellent etch result. The etched GaAs feature depicted extremely smooth surface (RMS roughness < 1 nm), vertical sidewall, relatively fast etch rate (> $3000\AA$/min) and good selectivity to a photoresist (> 3 : 1). XPS study indicated a very clean surface of the material after dry etching of GaAs. We also noticed that our planar ICP source was successfully ignited both with and without RIE chuck power, which was generally not the case with a typical cylindrical ICP source, where assistance of RIE chuck power was required for turning on a plasma and maintaining it. It demonstrated that the planar ICP source could be a very versatile tool for advanced dry etching of damage-sensitive compound semiconductors.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.5
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• pp.106-111
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• 2007

After the semiconductor processing, wafer is attracted by ESC(Electrostatic Chuck) with remaining electric charge. That causes too many problems for examples, sliding of wafer, popping or broken. This paper presents the model of ESC for silicon wafer, which is modeled by electrical circuit component such as capacitor. The simulations using PSpice result in the phenomenon of silicon wafer was charged by ESC. In this paper we suggest the discharging method. for wafer.