Dry Etching of GaAs in a Planar Inductively Coupled BCl3 Plasma |
Lim, Wan-tea
(School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications)
Baek, In-kyoo (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications) Jung, Pil-gu (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications) Lee, Je-won (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications) Cho, Guan-Sik (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications) Lee, Joo-In (Nano-Surface Group, Korea Research Institute of Standards and Science) Cho, Kuk-San (Cliotek, Inc.) Pearton, S.J. (Department of Materials and Eng., University of Florida) |
1 | J. W. Lee, J. F. Donohue, K. D. Mackenzie, R. Westerman, D. Johnson and S. J. Pearton, Solid-State Electronics, 43, 1769 (1999) DOI ScienceOn |
2 | B. H. O, J. S. Jeong, S. G. Park,, Surface and Coating Technology,, 120-121 (1999) |
3 | H. J. Lee, J. H. Kim, K. W. Whang, J. H. Joo and J. Vac, Sci. Technol. A14 (3), (1996) |
4 | Y. J. Sung, H. S. Kim, Y. H. Lee, J. W. Lee, S. H. Chae, Y. J. Park and G. Y. Yeom, Mater. Sci. Eng., B82, 50 (2001) DOI ScienceOn |
5 | M. A. Lieberman and A. J. Litchenberg, Principles of Plasma Discharges and materials Processing, John Willy & Sons Inc. (1994) |
6 | F. Ren, R. F. Kopf, J. M. Kuo, J. R. Lothian, J. W. Lee, S. J. Pearton, R. J. Shul, C. Constantine and D.Johnson, Solid State Electronics, 42, 749 (1998) DOI ScienceOn |
7 | J. W. Lee, K. D. Mackenzie, D. Johnson, R. J. Shul, S. J. Pearton, C. R. Abernathy and F. Ren, Solid State Electronics, 42, 1027 (1998) DOI ScienceOn |
8 | F. Ren, J. W. Lee, C. R. Abernathy, S. J. Pearton, C. Constantine, C. Barratt and R. J. Shul, J. Vac. Sci. Technol., B15, 983 (1997) DOI ScienceOn |
9 | K. N. Lee, J. W. Lee, J. Hong, C. R. Abernathy, S. J. Pearton and W. S. Hobson, J. of Electronic Materials, 26, 1279 (1997) DOI |
10 | J. W. Lee, J. Hong, E. S. Lambers, C. R. Abemathy, S. J. Pearton, W. S. Hobson and F. Ren, J. Electrochem. Soc., 143, 2010 (1996) DOI |
11 | S. J. Pearton, J. W. Lee, E. S. Lambers, J. R. Mileham, C. R. Abernathy, W. S. Hobson, F. Ren and R. J. Shul, J.Vac, Sci. Technol., B14, 118 (1996) |
12 | R. J. Shul, G. B. McClellan, R. D. Rriggs, D. J. Rieger, S. J. Pearton, C. R. Abernathy, J. W. Lee, C. Constantine and C.Barratt, J. Vac. Sci. Technol., A15, 633 (1997) DOI ScienceOn |
13 | J. W. Lee, J. Hong, E. S. Lambers, C. R. Abernathy, S. J. Pearton, W. S. Hobson and F. Ren, J. Electronic Materials, 26, 429 (1997) DOI |
14 | J. W. Lee, E. S. Lambers, C. R. Abernathy, S. J. Peartion, R. J. Shul, F. Ren, W. S. Hobson and C. Constantine, Solid State Electronics, 42, (1998) |
15 | T. Maeda, J. W. Lee, R. J. Shul, J. Han, J. Hong, E. S. Lambers, S. J. Pearton, C. R. Abernathy and W.S.Hobson, Applied Surface Science, 143, 174 (1999) DOI ScienceOn |
16 | J. W. Lee, C. R. Abernathy, S. J. Pearton, F. Ren, C. Constantine and C. Barratt, Solid State Electronics, 42, 733 (1998) DOI ScienceOn |