• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.6B
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• pp.114-114
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• 2000

In this paper, a current comparative frequency automatic tuning circuit for the CMOS bandpass filter are designed with the new architecture. And also, when the designed circuit is compared the typical tuning circuit, it has very simple architecture that is composed of the current comparator and charge pump and operated in 2V power supply. The proposed tuning circuit automatically compensate the difference between the operating current of the integrator and the reference current which is specified. Using CMOS 0.25um parameter, a CMOS bandpass active filter with center frequency(f0= 100MHz) is designed, and according to the transister size the variation of the center frequency is simulated. As the HSPIC simulation results, the tuning operating of the proposed current comparative frequency automatic tuning circuit is verified.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.435-436
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• 2008

This paper presents a dual band frequency synthesizer for GSM and Wideband CDMA which is designed in a standard 0.13um CMOS 1P6M process. The shared components include phase frequency detector (PFD), charge pump (CP), loop filter, integer frequency divider(128/129 DMP, 4bit PC, 3bit SC) and Low noise Ring-VCO. A high-speed low power dual modulus prescaler is proposed to operate up to 2.1GHz at 3.3V supply voltage with 2mW power consumption by simulation. The simulated phase noise of VCO is -101dBc/Hz at 200kHz offset frequency from 1.9GHz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.459-460
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• 2008

In this paper, a 10Gbps clock and data recovery circuit is designed in $0.18{\mu}m$ CMOS technology. The circuit incorporates a multiphase LC oscillator, a quarter-rate Bang-Bang phase detector, a charge pump and a second order loop filter. The simulation results show that the designed circuit has a peak-to-peak clock jitter of 4.2ps and a peak-to-peak recovered data jitter of 8ps while consuming about 80mW from a 1.8V supply.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1189-1192
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• 2003

본 논문에서는 노이즈를 고려한 PLL를 설계하였다. 30Mhz∼300Mhz으로 동작하는 VCO를 설계하였다. VCO를 평균 250Mhz으로 동작하도록 하고 reference 주파수, 62.5Mhz로 locking하는 PLL를 설계를 하였다. 300Mhz PLL의 기본적인 구조로 PLL은 PFD(Phase frequency detector), CP(Charge Pump), LF(Loop filter), VCO(Voltage controlled Oscillator)와 Divider로 구성되었다. PFD과 CP는 Dead Zone를 줄이고, 큰 gm를 가지도록 설계를 하였다. PLL에서 가장 중요한 블락인, VCO는 One Chip으로 설계하기 위해 Ring Oscillator로 설계를 하였다. 2.5V 62.5MHZ의 외부 신호를 300MHZ을 발진하는 VCO에서 분주하여 clock synthesizer를 설계하였다. 본 논문은 Hynix0.25공정을 사용하여 설계를 하였으며, 2.5V의 공급 전원을 사용하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.442-446
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• 2003

This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18um triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.241-246
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• 2007

This paper presents two novel compensation circuits for leakage current and power supply noise (PSN) in phase locked loop (PLL) using a nanometer CMOS technology. The leakage compensation circuit reduces the leakage current of the charge pump circuit and the PSN compensation circuit decreases the effect of power supply variation on the output frequency of VCO. The PLL design is based on a 32nm predictive CMOS technology and uses a 0.9 V power supply voltage. The simulation results show that the proposed PLL achieves 88% jitter reduction at 440 MHz output frequency compared to the PLL without leakage compensator and its output frequency drift is little to 20% power supply voltage variations. The PLL has an output frequency range of 40 $M{\sim}725$ MHz with a multiplication range of 1-1023, and the RMS and peak-to-peak jitter are 5psec and 42.7 psec, respectively.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.465-466
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• 2006

In this paper, novel analog duty cycle corrector (DCC) with a digital duty error detector is proposed. The digital duty error detector measures the duty error of the clock and converts it into a digital code. This digital code is then used to accurately correct the duty ratio by adaptively steering the charge-pump current. The proposed duty cycle corrector was implemented using an 80nm DRAM process with 1.8V supply voltage. The simulation result shows that the proposed duty cycle corrector improves the settling time up to $70{\sim}80%$ at 500MHz clock frequency for the same duty correction accuracy as the conventional analog DCC.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1202-1205
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• 2000

Germicidal lamps efficiently emit a large amount of ultraviolet rays 253.7nm which have excellent germicidal effect. The lamps are primarily useful for sterilization of air, the surface of various materials and water or liquid. In this paper, analysis of the charge pump power factor correction inverter for driving a 65W UV lamp and electrical characteristics of the lamp are discussed. The operation of the inverter circuit. in which the lamp is included as a load, is analyzed. Experimental results of the inverter circuit are also presented.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.197-198
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• 2007

In this paper, a 10Gbps Clock and Data Recovery circuit is designed in $0.18{\mu}m$ CMOS Technology. The circuit incorporates a multiphase LC oscillator, a quarter-rate Bang-Bang phase detector, a Charge Pump and a second order loop filter. The simulation results show that the designed circuit has a peak-to-peak clock jitter of 4.1ps and a peak-to-peak recovered data jitter of 8ps while consuming about 44mW from a 1.8V supply.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.697-699
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• 2017

A novel structure of phase locked loop (PLL) which has small size with D Flip-Flop and sub charge pump has been proposed. The area of loop filter usually occupying the larger portion of the chip is minimized using a single small capacitor. It has been simulated and proved by HSPICE in a CMOS $0.18{\mu}m$ 1.8V process.