• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.1
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• pp.117-123
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• 2001

In present study a methodology has been developed and applied for the optimum design and performance evaluation of microchannel heat sinks. The optimum design parameters include channel number and fin thickness. For a trial model of 127mm in length, 52.5mm in width, 16mm in height and 2.5mm in base thickness, the optimum channel number and the fin thinckness have been determined to be of 194 and 0.08359mm, respectively in laminar flow region. Performance of the optimally designed microchannel heat sinks has been compared with those having 50% and 150% of the number of channels. The results showed that the 50% and 150% designs increased the pumping power by 200% and 150%, respectively.

• Journal of computational fluids engineering
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• v.22 no.1
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• pp.67-80
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• 2017

The high-speed bypass effect on the heat exchanger performance has been investigated numerically. The plate-fin type heat exchanger was modeled using two-dimensional porous approximation for the fin region. Governing equations of mass, momentum, and energy equations for compressible turbulent flow were solved using ideal-gas assumption for the air flow. Various bypass-channel height were considered for Mach numbers ranging 0.25-0.65. Due to the existence of the fin in the bypass channel, the main flow tends to turn into the core region of the channel, which results in the distorted velocity profile downstream of the fin region. The boundary layer thickness, displacement thickness, and the momentum thickness showed the variation of mass flow through the fin region. The mass flow variation along the fin region was also shown for various bypass heights and Mach numbers. The volumetric entropy generation was used to assess the loss mechanism inside the bypass duct and the fin region. Finally, the correlations of the friction factor and the Colburn j-factor are summarized.

• Journal of the Institute of Convergence Signal Processing
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• v.5 no.1
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• pp.13-17
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• 2004

In order to measure the retina thickness, the retina photographing system and the multi-channel high speed image data acquisition system is developed. This system requires the optical processing techniques and the high speed image processing techniques. The HeNe laser beam is projected the retina in artificial eye and then we sensed the reflected laser signal using APD array. The laser projection system on retina using optical instruments is implemented. In order to project the plane laser beam on retina, laser photographing system used the polygon mirror for horizontal scanning and the galvano mirror for vertical scanning. We acquired retina images in each channel of APD array, transferred computer using PCI interface the image data after real-time A/D converting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.113-114
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• 2007

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2079-2088
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• 2014

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

• Transactions of Materials Processing
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• v.13 no.4
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• pp.382-387
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• 2004

The continuous confined strip shearing (CCSS) based on the equal channel angular pressing (ECAP) was modeled by means of a rigid-plastic two-dimensional finite element method (FEM). Parallel to the simulations, samples of AA 1050 sheets were experimentally deformed by CCSS. The CCSS deformation led to the formation of through thickness texture gradients comprising a strong shear texture in the sheet center and weak shear textures in the sheet surfaces. FEM analysis revealed variations in the strain component $\varepsilon_13$ along the sample thickness direction, which gave rise to the evolution of different textures. A high friction between the sample and die surface was responsible for lowering intensities of the shear texture components in thickness layers close to the surfaces.

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• Steel and Composite Structures
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• v.18 no.2
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• pp.467-480
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• 2015

The steel-concrete composite decks have high fatigue durability and deformability in comparison with ordinary RC slabs. Withal, the steel-concrete composite deck is mostly heavier than the RC slabs. We have proposed herein a new type of steel-concrete composite deck which is lighter than the typical steel-concrete composite decks. This can be achieved by arranging hollow sectional members as shear connectors, namely, half-pipe or channel shear connectors. The present study aims to experimentally investigate mechanical characteristics of the half-pipe shear connectors under the direct shear force. The shear bond capacity and deformability of the half-pipe shear connectors are strongly affected by the thickness-to-diameter ratio. Additionally, the shear strengths of the hollow shear connectors (i.e. the half-pipe and the channel shear connectors) are compared. Furthermore, shear capacities of the hollow shear connectors equivalent to headed stud connectors are also discussed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.799-804
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• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.805-810
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• 2016

The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.