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http://dx.doi.org/10.6109/jkiice.2016.20.4.805

Dependence of Channel Doping Concentration on Drain Induced Barrier Lowering for Asymmetric Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Eng., Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.20, no.4, 2016 , pp. 805-810 More about this Journal
Abstract
The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.
Keywords
Asymmetric Double Gate; Drain Induced Barrier Lowering; Poisson Equation; Channel Doping Concentration;
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