• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1673-1676
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• 2007

We have investigated the degradation mechanism of hydrogenated amorphous silicon (a- Si:H) thin film transistors (TFTs) The threshold voltage of driving a-Si:H TFT is shifted severely by electrical bias due to a charge trapping and defect state creation. And the short channel TFTs exhibit less threshold voltage degradation than long channel TFTs. We propose the pixel circuits employing negative bias annealing scheme in order to suppression of threshold voltage shift of a-Si:H TFT.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.2
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• pp.188-195
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• 1988

The electronic states in implanted n-type silicon inversion layers have been calculated by solving Schrodinger and Poisson's equations self-consistently. The results show that implantation affects seriously energy levels, populations, and electron distribution of n-type silicon inversion layers. The calcualted channel charge is in excellent agreement with the experimental data reported elsewhere. This analysis is expected to provide powerful means to evaluate the performance of implanted n-channel MOSTs.

• Proceedings of the Korean Biophysical Society Conference
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• 1996.07a
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• pp.34-34
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• 1996

Previously we showed that $Ba^{2+}$ block of large conductance $Ca^{2+}$-activated $K^{+}$ (BK) channel was larger in the planar lipid bilayer formed with negatively-charged phosphatidylserine (PS) than neutral phosphatidylethanolamine (PE). In this work, have studied the blocking effect of two $K^{+}$ channel blockers with different mechanisms of action, $Ba^{2+}$ and tetraethylammonium (TEA), on BK channels of rat skeletal muscle. (omitted)itted)

• Journal of the Korea Society of Computer and Information
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• v.22 no.6
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• pp.17-24
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• 2017

In recent digital broadcasting, up to 250 channels are multiplexed and transmitted. The channel transmission is made in the form of MPEG-2 Transport Stream (TS) and transmits one channel (Video, Audio). In order to check if many broadcast channels are transmitted normally, in multi-channel multi-view system, ability of real-time monitoring is required. In order to monitor efficient multi-channel, a distributed system in which functions and load are distributed should be implemented. In the past, we used an inefficient system that gave all of the functionality to a piece of hardware, which limited the channel acceptance and required a lot of resources. In this paper, we implemented a distributed multi-view system which can reduce resources and monitor them economically through efficient function and load balancing. It is able to implement efficient system by taking charge of decoding, resizing and encoding function in specific server and viewer function in separate server. Through this system, the system was stabilized, the investment cost was reduced by 19.7%, and the wall monitor area was reduced by 52.6%. Experimental results show that efficient real-time channel monitoring for multi-channel digital broadcasting is possible.

• Genomics & Informatics
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• v.21 no.3
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• pp.41.1-41.11
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• 2023

The Dengue virus M protein is a 75 amino acid polypeptide with two helical transmembranes (TM). The TM domain oligomerizes to form an ion channel, facilitating viral release from the host cells. The M protein has a critical role in the virus entry and life cycle, making it a potent drug target. The oligomerization of the monomeric protein was studied using ab initio modeling and molecular dynamics simulation in an implicit membrane environment. The representative structures obtained showed pentamer as the most stable oligomeric state, resembling an ion channel. Glutamic acid, threonine, serine, tryptophan, alanine, isoleucine form the pore-lining residues of the pentameric channel, conferring an overall negative charge to the channel with approximate length of 51.9 Å. Residue interaction analysis for M protein shows that Ala94, Leu95, Ser112, Glu124, and Phe155 are the central hub residues representing the physicochemical interactions between domains. The virtual screening with 165 different ion channel inhibitors from the ion channel library shows monovalent ion channel blockers, namely lumacaftor, glipizide, gliquidone, glisoxepide, and azelnidipine to be the inhibitors with high docking scores. Understanding the three-dimensional structure of M protein will help design therapeutics and vaccines for Dengue infection.

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.86-92
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• 2020

We confirmed the effects on the device performances and the charge injection characteristics of organic field-effect transistor (OFET) by selectively differently controlling the surface energies on the contact region of the substrate where the source/drain electrodes are located and the channel region between the two electrodes. When the surface energies of the channel and contact regions were kept low and increased, respectively, the field-effect mobility of the OFET devices was 0.063 ㎠/V·s, the contact resistance was 132.2 kΩ·cm, and the subthreshold swing was 0.6 V/dec. They are the results of twice and 30 times improvements compared to the pristine FET device, respectively. As the results of analyzing the interfacial trap density according to the channel length, a major reason of the improved device performances could be anticipated that the pi-pi overlapping direction of polymer semiconductor molecules and the charge injection pathway from electrode is coincided by selective surface treatment in the contact region, which finally induces the decreases of the charge trap density in the polymer semiconducting film. The selective surface treatment method for the contact region between the electrode and the polymer semiconductor used in this study has the potential to maximize the electrical performances of organic electronics by being utilized with various existing processes to lower the interface resistance.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.5
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• pp.1-9
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• 1981

Experimental results on a 4-bit charge-coupled A/D converter are described. Major operations in the successive approximation algorithm are implemented in a monolithic chip, CCADC, which was fabricated usir p-channel CCD technology, with its die size of 4,200 mil2 Typical operating frequency range has been found out to be from 500Hz to 200kHz. In that frequency range, no missing code has been found in the whole signal range of 2.4 volts for ramp signal slewing at 1 LSB/(sampling time). A discussion is made on several layout techniques to conserve the nominal binary ratio of (8:4:2:1) among the areas of four adjacent potential wells (M wells), whose charge storing capacities correspond to each bit magnitude - 3.6 pC, 1.8 pC, 0.9 pC, and 0.45 pC nominal in the order of MSB to the LSB. The effect of 'dump slot', which is responsible for the excessive nonlinearity (2$\frac{1}{2}$LSB) in the A/D converter, is explained. A novel input scheme called 'slot zero insertion' to circumvent the deleterious effects of the dump slot is described with the experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.665-671
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• 2017

Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.82-85
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• 1992

In this study, charge pumping method was used to investigate the Si-SiO$_2$interface characteristics of the nonvolatile SNOSFET memory devices, fabricated using the CMOS 1 Mbit processes (1.2$\mu\textrm{m}$ design rule), with thin oxide layer of 30${\AA}$ thick and nitride layer of 525${\AA}$ thick on the n-type silicon substrate (p-channel). Charge pumping current characteristics with the pulse base level were measured for various frequencies, falling times and rising times. By means of the charge dynamics in a non-steady state, the average Si-SiO$_2$interface state density and capture cross section were determined to be 3.565${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ and 4.834${\times}$10$\^$-16/$\textrm{cm}^2$, respectively. However Si-SiO$_2$ interface state densities were disributed 2.8${\times}$10$\^$-11/～5.6${\times}$10$\^$11/cm$\^$-2/～6${\times}$10$\^$11/cm$\^$-2/eV$\^$-1/ in the lover half of energy gap.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1991.10a
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• pp.205-209
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• 1991

The conventional modeling equations for planar MOSFET can not be directly used for zero or minus junction depth concave MOSFET. In this paper, we suggest a new model which can simulate the electrical characteristics of concave MOSFET. The threshold voltage modeling was achieved using the charge sharing method considering the relative difference of source and drain depletion widths. To analyze the ID-VDS characteristics, the conventional expressions for planar MOSFET were employed with the electrical channel length as an effective channel length and the channel length modulation factor as ${\alpha}$ΔL. By comparing the proposed model with experimental results, we could get reasonably similar curves and we proposed a concave MOSFET conditiion which shows no short channel effect of threshold voltage(V${\gamma}$).