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http://dx.doi.org/10.4313/JKEM.2017.30.10.665

Low-Voltage Operating N-type Organic Field-Effect Transistors by Charge Injection Engineering of Polymer Semiconductors and Bi-Layered Gate Dielectrics  

Moon, Ji-Hoon (Department of Graphic Arts Information Engineering, Pukyong National University)
Baeg, Kang-Jun (Department of Graphic Arts Information Engineering, Pukyong National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.30, no.10, 2017 , pp. 665-671 More about this Journal
Abstract
Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.
Keywords
Organic field-effect transistors; OFETs; PVDF polymers; Bi-layered dielectrics; Charge injection layer;
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