• Title/Summary/Keyword: Capacitive touch sensor

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A New Capacitive Sensing Circuit using Modified Charge Transfer Scheme

  • Yeo, Hyeop-Goo
    • Journal of information and communication convergence engineering
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    • v.9 no.1
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    • pp.78-82
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    • 2011
  • This paper proposes a new circuit for capacitive sensing based on Dickson's charge pump. The proposed touch sensing circuit includes three stages of NMOS diodes and capacitors for charge transfer. The proposed circuit which has a simplified capacitive touch sensor model has been analyzed and simulated by Spectre using Magna EDMOS technology. Looking from the simulation results, the proposed circuit can effectively be used as a capacitive touch sensing circuit. Moreover, a simple structure can provide maximum flexibility for making a digitally-controlled touch sensor driver with lowpower operations.

Finite Element Analysis of Capacitive pressure sensor with Touch mode for improving non-linearity (비선형성의 개선을 위한 Capacitive pressure sensor의 Touch mode 방식에 대한 유한요소 해석)

  • Kim, Do-Hyung;O, Jea-Geun;Choi, Bum-Kyoo
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.2087-2089
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    • 2004
  • Capacitive pressure sensor는 Piezo type sensor에 비해 온도의 영향이 적어 공업계측, 전기용품 등 그 용도가 다양하여 폭넓게 사용되어지고 있지만, 측정값의 비선형성이 존재하여 측정값에 대한 신뢰도가 떨어지는 단점이 있다. 본 연구에서는 기존 capacitive pressure sensor의 비선형적 output을 개선하기 위한 방법으로 touch mode capacitive pressure sensor를 제안하였다. 또한, 실제 Device제작에 앞서 FEM 해석을 수행하였다. 2mm X 2mm 크기의 diaphragm, $25{\mu}m$의 두께, $20{\mu}m$의 gap을 갖는 Sensor를 Simulation하였으며 설계 변수를 추출하여 각각의 설계변수에 대한 해석을 실시하였다. 그 결과 15.2psi${\sim}$31psi의 영역에서 8.58pF${\sim}$54.31pF의 capacitance가 선형적으로 나타나는 sensor임을 확인하였다.

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Capacitive Touch Sensor Pixel Circuit with Single a-InGaZnO Thin Film Transistor (단일 a-InGaZnO 박막 트랜지스터를 이용한 정전용량 터치 화소 센서 회로)

  • Kang, In Hye;Hwang, Sang Ho;Baek, Yeong Jo;Moon, Seung Jae;Bae, Byung Seong
    • Journal of Sensor Science and Technology
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    • v.28 no.2
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    • pp.133-138
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    • 2019
  • The a-InGaZnO (a-IGZO) thin film transistor (TFT) has the advantages of larger mobility than that of amorphous silicon TFTs, acceptable reliability and uniformity over a large area, and low process cost. A capacitive-type touch sensor was studied with an a-IGZO TFT that can be used on the front side of a display due to its transparency. A capacitive sensor detects changes of capacitance between the surface of the finger and the sensor electrode. The capacitance varies according to the distance between the sensor plate and the touching or non-touching of the sensing electrode. A capacitive touch sensor using only one a-IGZO TFT was developed with the reduction of two bus lines, which made it easy to reduce the pixel pitch. The proposed sensor circuit maintained the amplification performance, which was investigated for various drive conditions.

A Design of Capacitive Sensing Touch Sensor Using RC Delay with Calibration (캘리브래이션 기능이 있는 RC지연 정전용량 방식 터치센서 설계)

  • Seong, Kwang-Su;Lee, Mu-Jin
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.8
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    • pp.80-85
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    • 2009
  • In this paper, we propose a full digital capacitive sensing touch key reducing the effects due to the variations of resistance and clock frequency. The proposed circuit consists of two capacitive loads to measure and a resistor between the capacitive loads. The method measures the delays of the resistor and two capacitive loads, respectively. The ratio of the two delays is represented as the ratio of the two capacitive loads and is irrelative to the resistance and the clock frequency if quantization error is disregarded. Experimental results show the proposed scheme efficiently reduces the effects due to the variations of clock frequency and resistance. Further more the method has 1.04[pF] resolution and can be used as a touch key.

Design of Multi-Finger Flick Interface for Fast File Management on Capacitive-Touch-Sensor Device (정전기식 입력 장치에서의 빠른 파일 관리를 위한 다중 손가락 튕김 인터페이스 설계)

  • Park, Se-Hyun;Park, Tae-Jin;Choy, Yoon-Chul
    • Journal of Korea Multimedia Society
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    • v.13 no.8
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    • pp.1235-1244
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    • 2010
  • Most emerging smart phones support capacitive touch sensors. It renders existing gesture-based interfaces not suitable since they were developed for the resistive touch sensors and pen-based input. Unlike the flick gestures from the existing gesture interfaces, the finger flick gesture used in this paper reduces the workload about half by selecting the target and the command to perform on the target at a single touch input. With the combination with multi-touch interface, it supports various menu commands without having to learn complex gestures, and is suitable for the touch-based devices hence it minimizes input error. This research designs and implements the multi-touch and flick interface to provide an effective file management system on the smart phones with capacitive touch input. The evaluation proves that the suggested interface is superior to the existing methods on the capacitive touch input devices.

Verification of Bonding Force between PVP Dielectric Layer and PDMS for Application of Flexible Capacitive-type Touch Sensor with Large Dynamic Range (넓은 다이내믹 레인지의 유연 촉각센서 적용을 위한 PVP 유전층과 PDMS 접착력 검증)

  • Won, Dong-Joon;Huh, Myoung;Kim, Joonwon
    • The Journal of Korea Robotics Society
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    • v.11 no.3
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    • pp.140-145
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    • 2016
  • In this paper, we fabricate arrayed-type flexible capacitive touch sensor using liquid metal (LM) droplets (4 mm spatial resolution). Poly-4-vinylphenol (PVP) layer is used as a dielectric layer on the electrode patterned Polyethylene naphthalate (PEN) film. Bonding tests between hydroxyl group (-OH) on the PVP film and polydimethylsiloxane (PDMS) are conducted in a various $O_2$ plasma treatment conditions. Through the tests, we can confirm that non-$O_2$ plasma treated PVP layer and $O_2$ plasma treated PDMS can make a chemical bond. To measure dynamic range of the device, one-cell experiments are conducted and we confirmed that the fabricated device has a large dynamic range (~60 pF).

Characteristics of Surface Micromachined Capacitive Pressure Sensors for High Temperature Applications (표면 MEMS 기술을 이용한 고온 용량형 압력센서의 특성)

  • Seo, Jeong-Hwan;Noh, Sang-Soo;Kim, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.317-322
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    • 2010
  • This paper reports the fabrication and characterization of surface micromachined poly 3C-SiC capacitive pressure sensors on silicon wafer operable in touch mode and normal mode for high temperature applications. FEM(finite elements method) simulation has been performed to verify the analytical mode. The sensing capacitor of the capacitive pressure sensor is composed of the upper metal and the poly 3C-SiC layer. Measurements have been performed in a temperature range from $25^{\circ}C$ to $500^{\circ}C$. Fabrication process of designed poly 3C-SiC touch mode capacitive pressure sensor was optimized and would be applicable to capacitive pressure sensors that are required high precision and sensitivity at high pressure and temperature.

A Full Digital Capacitive Sensor for Touch Key Applications (터치키 응용을 위한 풀 디지털 정전용량 센서)

  • Seong, Kwang-Su;Lee, Mu-Jin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.6
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    • pp.25-30
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    • 2009
  • In this paper, a full-digital capacitive sensor for touch key applications is proposed. The proposed circuit consists of two capacitive loads to measure and a resistor between the capacitive loads. As the method measures the delays of the resistor and two capacitive loads respectively, and obtains difference between the capacitive loads by subtracting the two delays, it can reduce the effects of changing of operating environment variables such as supplying voltage, temperature and humidity. Experimental results show the method has l.02pF resolution and can be applied to touch key applications.

A Compact Low-Power Shunt Proximity Touch Sensor and Readout for Haptic Function

  • Lee, Yong-Min;Lee, Kye-Shin;Jeong, Taikyeong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.3
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    • pp.380-386
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    • 2016
  • This paper presents a compact and low-power on-chip touch sensor and readout circuit using shunt proximity touch sensor and its design scheme. In the proposed touch sensor readout circuit, the touch panel condition depending on the proximity of the finger is directly converted into the corresponding voltage level without additional signal conditioning procedures. Furthermore, the additional circuitry including the comparator and the flip-flop does not consume any static current, which leads to a low-power design scheme. A new prototype touch sensor readout integrated circuit was fabricated using complementally metal oxide silicon (CMOS) $0.18{\mu}m$ technology with core area of $0.032mm^2$ and total current of $125{\mu}A$. Our measurement result shows that an actual 10.4 inches capacitive type touch screen panel (TSP) can detect the finger size from 0 to 1.52 mm, sharply.

A Design of Full Digital Capacitive Sensing Touch Key Reducing The Effects Due to The Variations of Resistance and Clock Frequency (저항과 클록 주파수 변동에 의한 문제를 감소시킨 풀 디지털 방식 정전용량 센싱 터치키 설계)

  • Seong, Kwong-Su
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.4
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    • pp.39-46
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    • 2009
  • In this paper, we propose a full digital capacitive sensing touch key reducing the effects due to the variations of resistance and clock frequency. The proposed circuit consists of two capacitive loads to measure and a resistor between the capacitive loads. The method measures the delays of the resistor and two capacitive loads, respectively. The ratio of the two delays is represented as the ratio of the two capacitive loads and is irrelative to the resistance and the clock frequency if quantization error is disregarded. Experimental results show the proposed scheme efficiently reduces the effects due to the variations of clock frequency and resistance. Further more the method has l.04[pF] resolution and can be used as a touch key.