• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.352-353
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of do-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

• The KSFM Journal of Fluid Machinery
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• v.6 no.4 s.21
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• pp.21-28
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• 2003

CMP (Chemical Mechanical Polishing) is to achieve adequate local and global planarization for future sub-micrometer VLSI requirements. In designing CMP, numerical computation is quite helpful in terms of reducing the amount of experimental works. Stresses on pad, concentration of particles and particle tracking are studied for design. In this research, the optimization of grooved pad shape of CMP is performed through numerical investigation of slurry flow in CMP process. The result indicates that the combination of sinusoidal groove and skewed pad is the most optimal shape among the twenty candidates. Useful information can be obtained in velocity, pressure, stress, concentration of particles and particles trajectories, etc.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.922-927
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• 2003

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (within wafer non-uniformity) for ILD (inter level dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful for understanding polishing mechanism and local physics.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.4 s.235
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• pp.435-440
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• 2005

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (Within Wafer Non-Uniformity) for ILD (Inter Level Dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful fur understanding polishing mechanism and local physics.

• Tribology and Lubricants
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• v.40 no.2
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• pp.67-70
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• 2024

Chemical mechanical planarization (CMP) is an essential process for ensuring high integration when manufacturing semiconductor devices. CMP mainly requires the use of polyurethane-based polishing pads as an ultraprecise process to achieve mechanical material removal and the required chemical reactions. A diamond disk performs pad conditioning to remove processing residues on the pad surface and maintain sufficient surface roughness during CMP. However, the diamond grits attached to the disk cause uneven wear of the pad, leading to the poor uniformity of material removal during CMP. This study investigates the pad wear rate profile according to the swing motion of the conditioner during swing-arm-type CMP conditioning using deep learning. During conditioning, the motion of the swing arm is independently controlled in eight zones of the same pad radius. The experiment includes six swingmotion conditions to obtain actual data on the pad wear rate profile, and deep learning learns the pad wear rate profile obtained in the experiment. The absolute average error rate between the experimental values and learning results is 0.01%. This finding confirms that the experimental results can be well represented by learning. Pad wear rate profile prediction using the learning results reveals good agreement between the predicted and experimental values.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.148-150
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of de-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

• KSTLE International Journal
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• v.5 no.1
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• pp.32-35
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• 2004

The purpose of this study is to investigate the effects of the structure and mechanical properties of laser-processed pads on their polishing behavior such as their removal rate and WIWNU (within wafer non-uniformity) during the chemical mechanical planarization (CMP) process. The holes on the pad acted as the reservoir of slurry particles and enhanced the removal rate. Without grooves, no effective removal of wafers was possible. When the length of the circular-type grooves was increased, higher removal rates and lower wafer non-uniformity were measured. The removal rate and non-uniformity linearly increased as the elastic modulus of the top pad increased. Higher removal rates and lower non-uniformity were measured as the hardness of the pad increased.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.361-367
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• 2001

Recently, Chemical Mechanical Polishing(CMP) has become a leading planarization technique as a method for silicon wafer planarization that can meet the more stringent lithographic requirement of planarity for the future submicron device manufacturing. The SOI(Silicon On Insulator) wafer has received considerable attention as bulk-alternative wafer to improve the performance of semiconductor devices. In this paper, the objective of study is to investigate Material Removal Rate(MRR) and surface micro-roughness effects of slurry and pad in the CMP process. When particle size of slurry is increased, Material Removal rate increase. Surface micro-roughness is greater influenced by pad than by particle size of slurry. As a result of AM measurement, surface micro-roughness was improved from 27 $\AA$ Rms to 0.64 $\AA$Rms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.125-128
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• 2004

Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some Previous works shows that RR is determined by production of pressure and velocity and NC is also largely affected by velocity of flow-field during CMP. This study is about the direct measurement of velocity of slurry during CMP and reconstruction whole flow-field by Particle Image Velocimetry(PIV) Techniques. Typical PIV system is tuned adequately for inspecting CMP and Slurry Flow-field is measured by changing both Pad RPM and Carrier RPM. The results show that velocity is majorly determined not by Carrier RPM, but by Pad RPM.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.2
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• pp.38-45
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• 2005

Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.