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http://dx.doi.org/10.3795/KSME-B.2005.29.4.435

Numerical Study on Polishing Behavior During Oxide CMP  

Kwon Daljung (한양대학교 대학원 기계공학과)
Kim Inhwan (한양대학교 대학원 기계공학과)
Lee Dohyung (한양대학교 기계정보공학부)
Publication Information
Transactions of the Korean Society of Mechanical Engineers B / v.29, no.4, 2005 , pp. 435-440 More about this Journal
Abstract
In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (Within Wafer Non-Uniformity) for ILD (Inter Level Dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful fur understanding polishing mechanism and local physics.
Keywords
CMP; Sluny; Groove; Pad; CFD;
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