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The Effect of Mechanical Properties of Polishing Pads on Oxide CMP(Chemical Mechanical Planarization)  

Hong, Yi-Koan (Department of Metallurgy and Materials Engineering, Hanyang University)
Eom, Dae-Hong (Department of Metallurgy and Materials Engineering, Hanyang University)
Kang, Young-Jae (Department of Metallurgy and Materials Engineering, Hanyang University)
Park, Jin-Goo (Department of Metallurgy and Materials Engineering, Hanyang University)
Kim, Jae-Seok (SKC Co.)
Kim, Geon (SKC Co.)
Lee, Ju-Yeol (SKC Co.)
Park, In-Ha (SKC Co.)
Publication Information
KSTLE International Journal / v.5, no.1, 2004 , pp. 32-35 More about this Journal
Abstract
The purpose of this study is to investigate the effects of the structure and mechanical properties of laser-processed pads on their polishing behavior such as their removal rate and WIWNU (within wafer non-uniformity) during the chemical mechanical planarization (CMP) process. The holes on the pad acted as the reservoir of slurry particles and enhanced the removal rate. Without grooves, no effective removal of wafers was possible. When the length of the circular-type grooves was increased, higher removal rates and lower wafer non-uniformity were measured. The removal rate and non-uniformity linearly increased as the elastic modulus of the top pad increased. Higher removal rates and lower non-uniformity were measured as the hardness of the pad increased.
Keywords
Chemical mechanical planarization (CMP); laser process; pad; holes; groove pattern; elastic modulus; hardness;
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  • Reference
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