Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.11a
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- Pages.125-128
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- 2004
Measurement of the Slurry Flow-Field during Chemical Mechanical Polishing
Particle Image Velocimetry 기법을 이용하여, Chemical Mechanical Polishing 공정시 Slurry 유동장 측정
- Shin, Sang-Hee (School of Mech. & Aero. Engr. Seoul National University) ;
- Kim, Mun-Ki (School of Mech. & Aero. Engr. Seoul National University) ;
- Koh, Young-Ho (Samsung Electronics) ;
- Kim, Ho-Young (Samsung Electronics) ;
- Lee, Jae-Dong (Samsung Electronics) ;
- Hong, Chang-Ki (Samsung Electronics) ;
- Yoon, Young-Bin (Seoul National University)
- 신상희 (서울대학교 기계항공공학부 대학원) ;
- 김문기 (서울대학교 기계항공공학부 대학원) ;
- 고영호 (삼성전자) ;
- 김호영 (삼성전자) ;
- 이재동 (삼성전자) ;
- 홍창기 (삼성전자) ;
- 윤영빈 (서울대학교 기계항공공학부)
- Published : 2004.11.11
Abstract
Chemical Mechanical Polishing(CMP) in semiconductor production is characterized its output property by Removal Rate(RR) and Non-Uniformity(NU). Some Previous works shows that RR is determined by production of pressure and velocity and NC is also largely affected by velocity of flow-field during CMP. This study is about the direct measurement of velocity of slurry during CMP and reconstruction whole flow-field by Particle Image Velocimetry(PIV) Techniques. Typical PIV system is tuned adequately for inspecting CMP and Slurry Flow-field is measured by changing both Pad RPM and Carrier RPM. The results show that velocity is majorly determined not by Carrier RPM, but by Pad RPM.
Keywords
- Chemical Mechanical Polishing(CMP);
- Particle Image Velocimetry(PIV);
- Flow-Field of Slurry;
- Nonuniformity of Velocity