Proceedings of the KSME Conference (대한기계학회:학술대회논문집)
- 2003.11a
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- Pages.922-927
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- 2003
Numerical Study on Polishing Behavior during Oxide CMP
Oxide CMP 과정에 대한 수치 유동 해석
- Published : 2003.11.05
Abstract
In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (within wafer non-uniformity) for ILD (inter level dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful for understanding polishing mechanism and local physics.