• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.595-604
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• 2016

Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.67-74
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• 2014

This paper presents a memristor-CMOS based RBSD adder. Conventional RBSD adders suffer bigger hardware due to the extra logic handling larger number of bits. The purpose of this paper is to improve the silicon surface area and the computation delay of conventional RBSD adders. The proposed method employs memristor-CMOS based circuit. The implementation results shows that the proposed memristor-CMOS based RBSD adder saves the cell area by 45%, and reduces time delay 24% compared to conventional RBSD adders. The proposed RBSD adder design can bring further area saving for large scale designs.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.863-866
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• 2003

Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.10A
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• pp.1205-1214
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• 2004

For tile physical defects occurring in CMOS circuits which are not handled well by voltage-based testing, current testing is remarkable testing technique. Fault models based on defects must accurately describe the behaviour of the circuit containing the defect. In this paper, An efficient collapsing algorithm for fault models often used in current testing is proposed. Experimental results for ISCAS benchmark circuits show the effectiveness of the proposed method in reducing the number of faults that have to be considered by fault collapsing and its usefulness in various current based testing models.

• ETRI Journal
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• v.38 no.2
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• pp.272-279
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• 2016

In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR-based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch-up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit - (i) an AHHVSCR-based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR-based ESD protection circuit, and (iii) a standard HHVSCR-based ESD protection circuit. A circuit having the proposed new structure is fabricated using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology. The fabricated circuit is also evaluated using Transmission-Line Pulse measurements to confirm its electrical characteristics, and human-body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.6B
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• pp.1074-1079
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• 1999

A high performance CMOS receiver for 155.52 Mbps STM-1 digital communication has been designed and fabricated. The ASIC operates properly with 155.52 MHz clock frequency in case of the data loss due to some system error such as transmission line open or data transfer fail. Also it operates properly in case the system starts after the power failure or system maintenance. The designed circuit has especially PLL based self oscillation loop which operates on abnormal environment which is added to main oscillation loop. The measured results show that the circuit operates well with 153.52 MHz clock frequency not only on normal environment but also on abnormal environment. Rms jitter of the PLL loop is about 23 ps.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.2
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• pp.1-4
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• 2000

We presented a method for extracting the base resistance r/sun bb/ based on analysis of the equivalent noise circuit for common collector. Measurements were conducted on devices with poly-emitter structure fabricated by BiCMOS process. Base resistance measurements have been performed for different base currents and structure. For low base current it is shown that the experimental data agree with theoretical expectations.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.131-137
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• 2014

A 120 GHz voltage controlled oscillator (VCO) with a divider chain including an injection locked frequency divider (ILFD) and six static frequency dividers is demonstrated using 65-nm CMOS technology. The VCO is designed based on the LC cross-coupled push-push structure and operates around 120 GHz. The 60 GHz ILFD at the first stage of the frequency divider chain is based on a similar topology as the core of the VCO to ensure the frequency alignment between the two circuit blocks. The static divider chain is composed of D-flip flops, providing a 64 division ratio. The entire circuit consumes a DC power of 68.5 mW with the chip size of $1385{\times}835{\mu}m^2$.

• Journal of electromagnetic engineering and science
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• v.4 no.2
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• pp.56-62
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• 2004

We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${\mu}{\textrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.